Transcription of PD - 91385B IRF5305 - redrok.com
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PD - 91385B IRF5305 - redrok.com
IRF5305 HEXFET power MOSFETPD - 91385 BFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power mosfets are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the @ TC = 25 CContinuous Drain Current, VGS @ -10V-31ID @ TC = 100 CContinuous Drain Current, VGS @ -10V-22 AIDMP ulsed Drain Current -110PD @TC = 25 CPower Dissipation110 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse Avalanche Energy 280mJIARA valanche Current -16 AEARR epetitive Avalanche Energy 11mJdv/dtPeak Diode Rec
IRF5305 HEXFET® Power MOSFET PD - 91385B Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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