Transcription of S2301 : SiC Power Devices - Rohm
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S2301 : SiC Power Devices - Rohm
S2301 . N-channel SiC Power MOSFET bare die Data Sheet VDSS 1200V. RDS(on) (Typ.) 80mW. ID 40A*1. lFeatures lInner circuit 1) Low on-resistance (D). 2) Fast switching speed (G) Gate (D) Drain 3) Fast reverse recovery (S) Source (G). 4) Easy to parallel *1 Body Diode 5) Simple to drive (S). lApplication Solar inverters DC/DC converters Switch mode Power supplies Induction heating Motor drives lAbsolute maximum ratings (Ta = 25 C). Parameter Symbol Value Unit Drain - Source voltage VDSS 1200 V. Continuous drain current Tc = 25 C ID *1 40 A. Pulsed drain current ID,pulse *2 80 A. Gate - Source voltage (DC) VGSS -6 to 22 V. Gate - Source surge voltage (Tsurge 300nsec) VGSS-surge*3 -10 to 26 V.
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 30 35 t
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