S2301 : SiC Power Devices - Rohm

1 S2301 . N-channel SiC Power MOSFET bare die Data Sheet VDSS 1200V. RDS(on) (Typ.) 80mW. ID 40A*1. lFeatures lInner circuit 1) Low on-resistance (D). 2) Fast switching speed (G) Gate (D) Drain 3) Fast reverse recovery (S) Source (G). 4) Easy to parallel *1 Body Diode 5) Simple to drive (S). lApplication Solar inverters DC/DC converters Switch mode Power supplies Induction heating Motor drives lAbsolute maximum ratings (Ta = 25 C). Parameter Symbol Value Unit Drain - Source voltage VDSS 1200 V. Continuous drain current Tc = 25 C ID *1 40 A. Pulsed drain current ID,pulse *2 80 A. Gate - Source voltage (DC) VGSS -6 to 22 V. Gate - Source surge voltage (Tsurge 300nsec) VGSS-surge*3 -10 to 26 V.

2 Junction temperature Tj 175 C. Range of storage temperature Tstg -55 to +175 C. 2016 ROHM Co., Ltd. All rights reserved. 1/11 - S2301 Data Sheet lElectrical characteristics (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V(BR)DSS VGS = 0V, ID = 1mA 1200 - - V. voltage VDS = 1200V, VGS = 0V. Zero gate voltage IDSS Tj = 25 C - 1 10 A. drain current Tj = 150 C - 2 - Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA. Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA. Gate threshold voltage VGS (th) VDS = VGS, ID = V. VGS = 18V, ID = 10A. Static drain - source RDS(on) *4 Tj = 25 C - 80 111 mW.

3 On - state resistance Tj = 125 C - 125 - Gate input resistance RG f = 1 MHz, open drain - - W. *1 Limited only by maximum temperature allowed. *2 PW 10 s, Duty cycle 1%. *3 Example of acceptable Vgs waveform +26V. tsurge +22V. 0V. -6V. tsurge -10V. *4 Pulsed 2016 ROHM Co., Ltd. All rights reserved. 2/11 - S2301 Data Sheet lElectrical characteristics (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *4 VDS = 10V, ID = 10A - - S. Input capacitance Ciss VGS = 0V - 2080 - Output capacitance Coss VDS = 800V - 77 - pF. Reverse transfer capacitance Crss f = 1 MHz - 16 - Effective output capacitance, VGS = 0V.

4 Co(er) - 116 - pF. energy related VDS = 0V to 500V. Turn - on delay time td(on) *4 VDD = 400V, ID = 10A - 35 - Rise time tr *4 VGS = 18V/0V - 36 - ns Turn - off delay time td(off) *4 RL = 40W - 76 - Fall time tf *4 RG = 0W - 22 - VDD = 600V, ID=10A. Turn - on switching loss Eon *4 - 174 - VGS = 18V/0V. RG = 0W, L=500 H J. *4 *Eon includes diode Turn - off switching loss Eoff - 51 - reverse recovery lGate Charge characteristics (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *4 VDD = 400V - 106 - Gate - Source charge Qgs *4 ID = 10A - 27 - nC. *4. Gate - Drain charge Qgd VGS = 18V - 31 - Gate plateau voltage V(plateau) VDD = 400V, ID = 10A - - V.

5 2016 ROHM Co., Ltd. All rights reserved. 3/11 - S2301 Data Sheet lBody diode electrical characteristics (Source-Drain) (Ta = 25 C). Values Parameter Symbol Conditions Unit Min. Typ. Max. Inverse diode continuous, IS *1 - - 40 A. forward current Tc = 25 C. Inverse diode direct current, ISM *2 - - 80 A. pulsed Forward voltage VSD *4 VGS = 0V, IS = 10A - - V. *4. Reverse recovery time trr - 31 - ns IF = 10A, VR = 400V. Reverse recovery charge Qrr *4 - 44 - nC. di/dt = 150A/ s Peak reverse recovery current Irrm *4 - - A. 2016 ROHM Co., Ltd. All rights reserved. 4/11 - S2301 Data Sheet lElectrical characteristic curves Typical Output Characteristics(I) Typical Output Characteristics(II).

6 VGS= 18V VGS= 16V. 40 20. VGS= 20V VGS= 16V VGS= 20V. 18 VGS= 14V. 35. VGS= 18V VGS= 14V. 16. 30. 14 VGS= 12V. Drain Current : ID [A]. Drain Current : ID [A]. 25 12. 20 10. VGS= 12V. 8. 15. VGS= 10V 6 VGS= 10V. 10. 4. 5 Ta = 25 C Ta = 25 C. 2. Pulsed Pulsed 0 0. 0 2 4 6 8 10 0 1 2 3 4 5. Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]. Typical Output Characteristics(I) Typical Output Characteristics(II). 40 20. VGS= 20V VGS= 20V. 35 18. VGS= 18V VGS= 18V. 16. 30 VGS= 16V. 14. Drain Current : ID [A]. Drain Current : ID [A]. 25 VGS= 16V VGS= 12V VGS= 14V VGS= 10V. 12. VGS= 14V. 20 10 VGS= 12V. VGS = 10V. 15 8. 6. 10. 4.

7 5 Ta = 150 C Ta = 150 C. Pulsed 2 Pulsed 0 0. 0 2 4 6 8 10 0 1 2 3 4 5. Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]. 2016 ROHM Co., Ltd. All rights reserved. 5/11 - S2301 Data Sheet lElectrical characteristic curves Typical Transfer Characteristics Typical Transfer Characteristics (II). 100 40. VDS = 10V VDS = 10V. Pulsed 35. Pulsed 10 30. Drain Current : ID [A]. Drain Current : ID [A]. 25. Ta= 150 C. 1 Ta= 75 C 20. Ta= 150 C. Ta= 25 C. Ta= 75 C. Ta= -25 C 15 Ta= 25 C. Ta= -25 C. 10. 5. 0. 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20. Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]. Gate Threshold Voltage Transconductance vs.

8 Drain Current vs. Junction Temperature 5 10. VDS = 10V VDS = 10V. Gate Threshold Voltage : V GS(th) [V]. ID = 10mA Pulsed 4. Transconductance : gfs [S]. 1. 3. 2 Ta = 150 C. Ta = 75 C. Ta = 25 C. Ta = -25 C. 1. 0 -50 0 50 100 150 1 10 100. Junction Temperature : Tj [ C] Drain Current : ID [A]. 2016 ROHM Co., Ltd. All rights reserved. 6/11 - S2301 Data Sheet lElectrical characteristic curves Static Drain - Source On - State Static Drain - Source On - State Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature Static Drain - Source On-State Resistance Static Drain - Source On-State Resistance Ta = 25 C VGS = 18V. Pulsed Pulsed ID = 20A.

9 : RDS(on) [ ]. : RDS(on) [ ]. ID = 10A. ID = 20A. ID = 10A. 0 0. 6 8 10 12 14 16 18 20 22 -50 0 50 100 150. Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ C]. Static Drain - Source On - State Resistance vs. Drain Current 1. Static Drain - Source On-State Resistance VGS = 18V. Pulsed : RDS(on) [ ]. Ta = 150 C. Ta = 75 C. Ta = 25 C. Ta = -25 C. 1 10 100. Drain Current : ID [A]. 2016 ROHM Co., Ltd. All rights reserved. 7/11 - S2301 Data Sheet lElectrical characteristic curves Typical Capacitance Coss Stored Energy vs. Drain - Source Voltage 10000 40. Ta = 25 C. Coss Stored Energy : EOSS [uJ]. 1000 Ciss 30. Capacitance : C [pF].

10 Coss 100 Crss 20. 10 10. Ta = 25 C. f = 1 MHz VGS = 0V. 1 0. 1 10 100 1000 0 200 400 600 800. Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]. Switching Characteristics Dynamic Input Characteristics 10000 20. Ta = 25 C. tf Ta = 25 C. VDD = 400V. VDD = 400V. Gate - Source Voltage : VGS [V]. ID = 10A. 1000 VGS = 18V 15 Pulsed RG = 0 . Switching Time : t [ns]. Pulsed td(off). 100 10. tr 10 5. td(on). 1 0. 1 10 100 0 20 40 60 80 100 120. Drain Current : ID [A] Total Gate Charge : Qg [nC]. 2016 ROHM Co., Ltd. All rights reserved. 8/11 - S2301 Data Sheet lElectrical characteristic curves Typical Switching Loss Typical Switching Loss vs.