CMOS Manufacturing Process
Digital Integrated Circuits Manufacturing Process EE141 A Modern CMOS Process p-well n-well p+ p-epi SiO 2 AlCu poly n+ SiO 2 p+ gate-oxide Tungsten TiSi 2 ... Transistor Layout 1 2 5 3 T r a n s i s t o r. Digital Integrated Circuits Manufacturing Process EE141 Vias and Contacts 1 2 1 Via Metal to Metal to Poly Contact Active Contact 1 2 5 4 3 ...
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chapter2.fm Page 33 Monday, September 4, 2000 …
bwrcs.eecs.berkeley.eduIC packaging Future Trends in Integrated Circuit Technology 2.1 Introduction 2.2 Manufacturing CMOS Integrated Circuits 2.2.1 The Silicon Wafer 2.2.2 Photolithography 2.2.3 Some Recurring Process Steps ... cess that lies at the core of the semiconductor revolution. Yet, some insight in the steps ...
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DESIGNING COMBINATIONAL LOGIC GATES IN CMOS
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Chapter 4 Calculating the Logical Effort of Gates
bwrcs.eecs.berkeley.edu4.3 Calculating logical effort Definition 4.2 provides a convenient method for calculating the logical effort of a logic gate. We have but to design a gate that has the same current drive character-istics as a reference inverter, calculate the input capacitances of each signal, and apply Equation 4.1 to obtain the logical effort.
DESIGNING COMBINATIONAL LOGIC GATES IN CMOS
bwrcs.eecs.berkeley.eduof arbitrary digital gates such as NOR, NAND and XOR. The focus will be on combina-tional logic (or non-regenerative) circuits that have the property that at any point in time, the output of the circuit is related to its current input signals by some Boolean expression (assuming that the transients through the logic gates have settled).
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SEMICONDUCTOR MEMORIES
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