Energy-Efficient High-Power IGBTs
Energy-Efficient High-Power IGBTs (From 600V to 4500V) IXYS Corporation (NASDAQ: IXYS) offers the broadest IGBTs product portfolios in the power semiconductor industry; designers can
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IXYS Power MOSFETs, Modules, and Gate Drivers
www.ixyspower.comMarch 2014 www.ixys.com FEATURES ‘Normally-On’ operation Linear mode tolerant Low R DS(on) Useable body diode Internal standard packages UL 94 V-0 …
Insulated Gate Bipolar Transistor (IGBT) Basics
www.ixyspower.comInsulated Gate Bipolar Transistor (IGBT) Basics Abdus Sattar, IXYS Corporation 2 IXAN0063 high-blocking voltage rating is normally avoided. In …
New IXYS Silicon Carbide solutions in MiniBLOC …
www.ixyspower.comIXYS Silicon Carbide solutions in MiniBLOC package THE “COOL” SOLUTION! May 2016 WWW.IXYS.COM NEW PRODUCT BRIEF • Power Supplies • High frequency …
POER - IXYS Corporation
www.ixyspower.comISOPluS i4-PaCTm half-Bridge mOSFET Summary Table Application Circuits ISOPluSTm Packages with Internal Alumina DCB Isolation* EmI Filter Bridge Rectifier Boost PFC Control and Gate
Very High Voltage Discrete Portfolio - IXYS Corporation
www.ixyspower.comIXYS High Voltage BiMOSFETsTM represent excellent candidates for any high-voltage, high-current applications where traditional MOSFETs are typically utilized in series-parallel strings to overcome their voltage, current and on-state limitations. Replacement of such series-parallel strings, (and associated gate drive circuitry), results in a much
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