Very High Voltage Discrete Portfolio - IXYS Corporation

1 IXYSPOWERE fficiency Through TechnologyVery high Voltage Discrete PortfolioPRODUCT BRIEFFROm ThE RECOgnIzED InDUsTRy lEaDER FOR Discrete sEmICOnDUCTOR PRODUCTs aBOvE 2500vaUgUsT 2009 OvERvIEWDIsCRETE high Voltage IgBT maRkETGraphic on the left illustrates IXYS IGBT device Portfolio dominance in the high Voltage Discrete market. Closest major competitor offers only up to 1600V of collector emitter breakdown Voltage . Discrete high Voltage mOsFET maRkET Graphic on the right illustrates IXYS MOSFET device Portfolio dominance in the high Voltage Discrete market.

2 Closest major competitor offers only up to 1200V of drain to source breakdown Voltage . the new Green-World Economy unfolds, Design Engineers are quickly transitioning to focus ever more effort upon maximizing the efficiency of their designs, which is resulting in a world-wide explosion of demand for very - high - Voltage (VHV) Power Semiconductor Product Brief introduces three proven families of VHV Discrete Devices like no others currently available in the Power Semiconductor Marketplace. These IGBT, MOSFET and BiMOSFETTM Families provide cost-effective solutions for applications requiring up to 4000V of power switching capability, with current ratings from Amperes to 180 Amperes!

3 Through the utilization of these components, Design Engineers are provided with the ability to switch more power within a smaller footprint than ever before possible; eliminating the need to use multiple, lower- Voltage , series-connected devices in most higher- Voltage designs. The result is a much simpler system design, with improved reliability, a lower component count, and a lower system cost critical elements in the bulk of higher- Voltage applications world is transitioning, and efficiency is becoming a more critical key for extending the lifespan and competitiveness of designs in the marketplace.

4 IXYS unique Portfolio of very - high - Voltage Discrete Devices is standing by, ready to assist Design Engineers in reaching beyond the circuits of yesteryear, and in delivering more capability more elegantly than ever i4-Pak TO-268 (D3-Pak)TO-264 PLUS 247 ISOPLUS 264 IXYS offers a unique Portfolio of Discrete 2500V, 3000V, and 4000V VHV IGBTs with collector current ratings spanning from Amperes to 180 Amperes (Tc=25 C). The Voltage and current ratings of these devices, coupled with simplified MOS gate-control, allow the system designer to greatly reduce the complexity of many high Voltage switching IGBTs enable the use of a single device in systems whose circuits previously used multiple, cascaded, lower- Voltage switches.

5 Such device consolidation reduces the number of power devices, while also improving cost and efficiency by eliminating complex drive and Voltage balancing components. In systems whose circuits previously utilized high Voltage SCRs, the use of these VHV IGBTs provides the designer with a true switch for easy implementation of signal modulation schemes, thus improving efficiency, simplifying wave shaping, and enabling load disconnection for improved system safety. Traditional high Voltage EMRs and discharge relays can also be replaced, reducing system complexity and improving overall reliability.

6 Applications which stand to benefit from the combination of power and simplicity offered by these convenient IGBTs includes high - Voltage pulse circuits, capacitor discharge circuits, high - Voltage power supplies, and laser and x-ray generation systems. IXYS VHV IGBTs are also available in our proprietary ISOPLUSTM packaging, offering high isolation capability (up to 4000V) and superior thermal performance. IXYS will also be offering a full range of high speed IGBTs with hard-switching capabilities of up to 20khz in near blocking voltages high peak current capability high power density Low saturation Voltage International standard and proprietary IsOPlUsTm packagesaPPlICaTIOnsPulser Circuits Capacitor Discharge Circuits high Voltage Power Supplies high Voltage Test Equipment Laser & X-ray Generators PartNumbervCEs (v)Ic25Tc=25 C(a)Ic90 Tc=90 C(a)Vce(sat) max Tj=25 C(v)tfityp(ns)Eoff typTj=125 C(mJ)RthJCmax( C/W) (D3-Pak)

7 (ISOPLUS i5-PakTM) i4-PakTMIXGF4N4004000N/A4 Under DevelopmentISOPLUS i4-PakTMIXEL40N4004000 i5TM (HV)IXGF54N4004000N/A54 Under DevelopmentISOPLUS i4-PakTMVery high Voltage IGBT savaIlaBlEPaCkagEsPLUS 220 SMDTO-247 IXYS VHV N-Channel Power MOSFETs are specifically designed to address demanding, fast-switching applications requiring blocking capabilities up to VHV MOSFETs are also ideally suited for parallel operation due to the positive temperature coefficient of their on-state resistance. Parallel operation with these devices provides a more cost-effective solution than employing series-connected, lower- Voltage MOSFETs.

8 The reduction or replacement of multiple series-connected devices and the associated gate drive circuitry commonly involved, simplifies design, improves reliability, and reduces over-all system VHV MOSFETs represent an optimal solution in applications such as laser and x-ray generation systems, high - Voltage power supplies, pulse circuits, high - Voltage automated test equipment, and capacitor discharge circuits. 4kV device offerings feature high isolation capability (up to 4000V) with superior thermal 2500V, UL recognized isolation with superior thermal performance (E153432).

9 Improves temperature and power cycling capability. Cost effective clip mounting. * IXYS Patented Packages, Patent No. 6,404,065; 6,404,065; 6,534,343; 6,583,505; 6,710,463; 6,731,002; 7,005,734* For information regarding IXYS ISOPLUS packages, visit line of proven ISOPLUSTM packaging provides for improved creepage distance to simplify compliance with regulatory high - Voltage spacing requirements. The copper-bonded, isolated ceramic substrate enhances overall device reliability by greatly improving thermal and power cycling, and the isolated backside simplifies mounting while yielding superior thermal impedance.

10 The molding epoxies utilized meet the UL 94V-0 flammability up with multiple Patents and UL recognition, the ISOPLUSTM packaging advantage is available only from blocking voltages high power density high peak current capability Low saturation Voltage International standard and proprietary ISOPLUSTm packagesaPPlICaTIOnsHigh Voltage Power Supplies Capacitor Discharge Circuits Pulser Circuits Discharge Relays high Voltage Test Equipment Laser & X-ray Generators PartNumberVdssmax(v)Id25Tc=25 C(a)Rds(on) max Tj=25 C (W)Cisstyp(pF)Qg typ (nC)trrtyp(ns)RthJCmax( C/W)Pd(W) DevelopmentISOPLUS DevelopmentISOPLUS i4-PakTMBond wiresLeadsCopperCopperSolderCeramicDCBCh ipMouldVery high Voltage MOSFET savaIlaBlEPaCkagEsIsOPlUsTm Packages with Internal Alumina DCB Isolation* 2009 PBVHVIGBTBIMOSFET i4-PakTMTO-264TO-247TO-268 PLUS 247 IXYS high Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking Voltage capabilities of up to 3kV with corresponding collector current ratings of up to 130 amperes.