STP4953 - Stanson Tech
STP4953 Dual P Channel Enhancement Mode MOSFET-5.2 ASTANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson ...
Download STP4953 - Stanson Tech
Information
Domain:
Source:
Link to this page:
Related documents
AOD4189 P-Channel Enhancement Mode Field Effect …
aosmd.comSymbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 15 20 41 50 RθJC 2 2.4 °C 62.5 31-55 to 175 W 2.5 1.6 Continuous Drain Current B,H Parameter Maximum Units TC=25°C TC=100°C-40 Absolute Maximum Ratings TC=25°C unless otherwise noted V TA=70°C Power Dissipation B Avalanche Current C Repetitive avalanche energy L=0.1mH C A
AOD464 N-Channel Enhancement Mode Field Effect …
aosmd.comSymbol V DS V GS I DM I AR E AR T J, T STG Symbol Typ Max 15 18 45 55 Maximum Junction-to-Case RθJC 1 1.5 B Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s °C/W Maximum Junction-to-Ambient A W
11EDCField-effect transistorUnivMalasiya (FET)Lesson11.ppt
www.dauniv.ac.inThe Field Effect Transistor (FET) In 1945, Shockley had an idea for making a solid state device out of semiconductors. He reasoned that a strong electrical field could cause the flow of electricity within a nearby semiconductor. He tried to build one, but it didn't work. Three years later, Brattain & Bardeen built the first working transistor, the germanium point-contact
Lesson-12: MOSFET (enhancement and depletion mode ...
www.dauniv.ac.in2008 EDCLesson12- " , Raj Kamal, 23 Channel width enhancement with +V GS The gate electrode is placed on top of a very thin insulating layer. There are a pair of small n-type regions just under the drain & source electrodes. If apply a +ve voltage to gate, will push away the ‘holes’ inside the p …
SYLLABUS B.Sc. ELECTRONICS - Chhatrapati Shahu Ji …
www.kanpuruniversity.orgSYLLABUS B.Sc.-I (ELECTRONICS) PAPER- II Fundamentals of Analog and Digital System Max. Marks-50 Unit - 1 Basic Operational Amplifier: Concept of differential amplifiers, block diagram of an operational amplifier(IC741),
A comprehensive methodology to qualify the reliability of ...
www.ti.comA comprehensive methodology to qualify the reliability of GaN products 5 Texas Instruments: March 2015 It is important to base the failure criteria upon the specific failure modes of GaN.