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SMCJ Transient Voltage Suppressor Diode Series

Featuresn RoHS compliant*n Surface Mount SMC packagen Standoff Voltage : to 495 voltsn Power Dissipation: 1500 wattsApplicationsn IEC 61000-4-2 ESD (Min. Level 4)n IEC 61000-4-4 EFTn IEC 61000-4-5 SurgeElectrical Characteristics (@ TA = 25 C Unless Otherwise Noted)SMCJ Transient Voltage Suppressor Diode Series ParameterSymbolValueUnitMinimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2)PPK1500 WattsPeak Forward Surge Current ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3)IFSM200 AmpsSteady State Power Dissipation @ TL = 75 CPM(AV) Instantaneous Forward Voltage @ IPP = 100 A (For Unidirectional Units Only) ~ SMCJ90A SMCJ100A ~ Temperature RangeTJ-55 to +150 CStorage Temperature RangeTSTG-55 to +150 C1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 C per Pulse Derating Thermal Resistance Junction to ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).

SMCJ Transient Voltage Suppressor Diode Series Rating & Characteristic Curves Pulse Derating Curve Maximum Non-Repetitive Surge …

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Transcription of SMCJ Transient Voltage Suppressor Diode Series

1 Featuresn RoHS compliant*n Surface Mount SMC packagen Standoff Voltage : to 495 voltsn Power Dissipation: 1500 wattsApplicationsn IEC 61000-4-2 ESD (Min. Level 4)n IEC 61000-4-4 EFTn IEC 61000-4-5 SurgeElectrical Characteristics (@ TA = 25 C Unless Otherwise Noted)SMCJ Transient Voltage Suppressor Diode Series ParameterSymbolValueUnitMinimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2)PPK1500 WattsPeak Forward Surge Current ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3)IFSM200 AmpsSteady State Power Dissipation @ TL = 75 CPM(AV) Instantaneous Forward Voltage @ IPP = 100 A (For Unidirectional Units Only) ~ SMCJ90A SMCJ100A ~ Temperature RangeTJ-55 to +150 CStorage Temperature RangeTSTG-55 to +150 C1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 C per Pulse Derating Thermal Resistance Junction to ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).

2 General InformationThe markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC) size format. The Transient Voltage Suppressor Series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown Voltage up to 550 V. Typical fast response times are less than picosecond for unidirectional devices and less than picoseconds for bidirectional devices from 0 V to Minimum Breakdown Voltage . Bourns Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration minimizes roll away. How to OrderSMCJ CA - H Package SMCJ = SMC/DO-214AB Working Peak Reverse Voltage = VRWM (Volts)Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional DeviceReel (blank) = 13 inch reel -H = 7 inch reelAgency RecognitionDescriptionULFile Number: E153537 Asia-Pacific: Tel: +886-2 2562-4117 Email: Tel: +36 88 885 877 Email: Americas: Tel: +1-951 781-5500 Email: Directive 2015/863, Mar 31, 2015 and are subject to change without should verify actual device performance in their specific applications.

3 The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at WARNING Cancer and Reproductive Harm - Transient Voltage Suppressor Diode Series Electrical Characteristics (@ TA = 25 C Unless Otherwise Noted)Notes: A denotes a 5 % tolerance unidirectional For bidirectional devices with a VR of 10 volts or less, the IR limit is CA denotes a 5 % tolerance bidirectional DeviceBidirectional DeviceBreakdown Voltage VBR (Volts)Working Peak Reverse VoltageMaximum Reverse Leakage @ VRWMM aximum Clamping Voltage @ Ipp (10/1000 s)Maximum Peak Pulse Current(10/1000 s)Maximum Clamping Voltage @ Ipp (8/20 s)Maximum Peak Pulse Current(8/20 s)Part No. MarkingPart @ IT (mA)VRWM (V)IR ( A)Vc (V)Ipp (A)Vc (V)Ipp (A) 104 18511371117855 SMCJ90 AGGXSMCJ90 CABGX100 111 123 135 147 159 185 197 209 are subject to change without should verify actual device performance in their specific applications.

4 The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at Dimensions SMCJ Transient Voltage Suppressor Diode Series Recommended FootprintPhysical SpecificationsCase ..Molded plastic per UL Class band indicates unidirectional device No cathode band indicates bidirectional deviceWeight .. gramsDIMENSIONS: MM (INCHES)ACBGFDCBMM(INCHES)DIMENSIONS:HEA AACCFEBBDMM(INCHES)DIMENSIONS:DimensionS MC (DO-214AB) - ( - ) - ( - ) - ( - ) - ( - ) - ( - )F - ( - )G - ( - )H - ( - )DIMENSIONS: MM (INCHES)DimensionSMC (DO-214AB)A (Max.) ( )B (Min.) ( )C (Min.) ( )Specifications are subject to change without should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at SMCJ Transient Voltage Suppressor Diode Series Rating & Characteristic CurvesPulse Derating CurveMaximum Non-Repetitive Surge CurrentPulse WaveformTypical Junction CapacitancePulse Rating CurveSteady State Power Derating Curve10075502500502575100150125175200 Ambient Temperature (Peak Pulse Derating in Percent ofPeak Power or Current C)10 x 1000 Waveform as Definedby , Time (ms)IP, Peak Pulse Current (%)TA=25 CTPTR=10 sHalf value=IRSM2 Peak value (IRSM)Pulse width (TP) is defined as that point where the peak currentdecays to 50 % of x 1000 waveformas defined by Forward Surge Current (Amps)10020010125102050100 Number of Cycles at 60 HzPulse Width msSingle Half Sine-Wave(JEDEC Method)Capacitance (pF)1000010000101001000 Standoff Voltage (Volts)

5 1000 BidirectionalTA = 25 s10 s100 ms10 msTP, Pulse WidthPP, Peak Power (KW)TA = 25 CNon-repetitive Pulse WaveformShown in Pulse Waveform mm Lead - Lead Temperature ( C)Steady State Power Dissipation (W)10075502500502575100150125175200 Ambient Temperature (Peak Pulse Derating in Percent ofPeak Power or Current C)10 x 1000 Waveform as Definedby , Lead Temperature ( C)RM(AV) Steady State Power Dissipation (W)60 Hz Resistive orInductive , Time (ms)IP, Peak Pulse Current (%)TA=25 CTPTR=10 sHalf value=IRSM2 Peak value (IRSM)Pulse width (TP) is defined as that point where the peak currentdecays to 50 % of x 1000 waveformas defined by Forward Surge Current (Amps)10020010125102050100 Number of Cycles at 60 HzPulse Width msSingle Half Sine-WaveCapacitance (pF)1000010000101001000 Standoff Voltage (Volts)1000 BidirectionalTA = 25 s10 s100 ms10 msTP, Pulse WidthPP, Peak Power (KW)TA = 25 CNon-repetitive Pulse WaveformShown in Pulse Waveform mm Lead Areas10075502500502575100150125175200 Ambient Temperature (Peak Pulse Derating in Percent ofPeak Power or Current C)10 x 1000 Waveform as Definedby , Time (ms)IP, Peak Pulse Current (%)TA=25 CTPTR=10 sHalf value=IRSM2 Peak value (IRSM)Pulse width (TP) is defined as that point where the peak currentdecays to 50 % of x 1000 waveformas defined by Forward Surge Current (Amps)10020010125102050100 Number of Cycles at 60 HzPulse Width msSingle Half Sine-Wave(JEDEC Method)Capacitance (pF)1000010000101001000 Standoff Voltage (Volts)1000 BidirectionalTA = 25 s10 s100 ms10 msTP, Pulse WidthPP, Peak Power (KW)TA = 25 CNon-repetitive Pulse WaveformShown in Pulse Waveform mm Lead - Lead Temperature ( C)Steady State Power Dissipation (W)

6 10075502500502575100150125175200 Ambient Temperature (Peak Pulse Derating in Percent ofPeak Power or Current C)10 x 1000 Waveform as Definedby , Time (ms)IP, Peak Pulse Current (%)TA=25 CTPTR=10 sHalf value=IRSM2 Peak value (IRSM)Pulse width (TP) is defined as that point where the peak currentdecays to 50 % of x 1000 waveformas defined by Forward Surge Current (Amps)10020010125102050100 Number of Cycles at 60 HzPulse Width msSingle Half Sine-Wave(JEDEC Method)Capacitance (pF)1000010000101001000 Standoff Voltage (Volts)1000 BidirectionalTA = 25 s10 s100 ms10 msTP, Pulse WidthPP, Peak Power (KW)TA = 25 CNon-repetitive Pulse WaveformShown in Pulse Waveform mm Lead - Lead Temperature ( C)Steady State Power Dissipation (W)10075502500502575100150125175200 Ambient Temperature (Peak Pulse Derating in Percent ofPeak Power or Current C)10 x 1000 Waveform as Definedby , Time (ms)IP, Peak Pulse Current (%)TA=25 CTPTR=10 sHalf value=IRSM2 Peak value (IRSM)Pulse width (TP) is defined as that point where the peak currentdecays to 50 % of x 1000 waveformas defined by Forward Surge Current (Amps)10020010125102050100 Number of Cycles at 60 HzPulse Width msSingle Half Sine-Wave(JEDEC Method)Capacitance (pF)1000010000101001000 Standoff Voltage (Volts)1000 BidirectionalTA = 25 s10 s100 ms10 msTP, Pulse WidthPP, Peak Power (KW)TA = 25 CNon-repetitive Pulse WaveformShown in Pulse Waveform mm Lead - Lead Temperature ( C)Steady State Power Dissipation (W)10075502500502575100150125175200 Ambient Temperature (Peak Pulse Derating in Percent ofPeak Power or Current C)10 x 1000 Waveform as Definedby , Lead Temperature ( C)RM(AV) Steady State Power Dissipation (W)60 Hz Resistive orInductive , Time (ms)IP, Peak Pulse Current (%)TA=25 CTPTR=10 sHalf value=IRSM2 Peak value (IRSM)Pulse width (TP)

7 Is defined as that point where the peak currentdecays to 50 % of x 1000 waveformas defined by s10 s10 msTP, Pulse WidthPP, Peak Power (KW)100 mm Lead AreasTA = 25 CNon-repetitive Pulse WaveformShown in Pulse Waveform GraphPeak Forward Surge Current (Amps)10020010125102050100 Number of Cycles at 60 HzPulse Width msSingle Half Sine-Wave(JEDEC Method)Capacitance (pF)1000010000101001000 Standoff Voltage (Volts)1000 BidirectionalTA = 25 CUnidirectionalSpecifications are subject to change without should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at CDDFN5-0504N - TVS/Steering Diode ArrayPackaging D2DD1W1 CIndex HoleP0P1WB10 pitches (min.)Direction of Feed10 pitches (min.)EndTrailerDeviceUnidirectionalProd uctOrientationLeaderStartdThe product will be dispensed in tape and reel format (see diagram below).

8 Devices are packed in accordance with EIA standard RS-481-A and specifications shown : MM (INCHES)ItemSymbolSMC (DO-214AB)7 Inch Reel13 Inch ReelCarrier ( - )Carrier LengthB ( )Carrier DepthC ( )Sprocket Holed ( )Reel Outside DiameterD 178 ( ) 330 ( )Reel Inner DiameterD1 ( ) Hole DiameterD2 + ( + )Sprocket Hole PositionE ( )Punch Hole PositionF ( )Punch Hole PitchP ( )Sprocket Hole PitchP0 ( )Embossment CenterP1 ( )Overall Tape ( )Tape ( )Reel ( ) per Reel--500 3,000 REV. 03/20 SMCJ Transient Voltage Suppressor Diode Series Specifications are subject to change without should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at Legal Disclaimer NoticeThis legal disclaimer applies to purchasers and users of Bourns products manufactured by or on behalf of Bourns, Inc.

9 And its affiliates (collectively, Bourns ).Unless otherwise expressly indicated in writing, Bourns products and data sheets relating thereto are subject to change without notice. Users should check for and obtain the latest relevant information and verify that such information is current and complete before placing orders for Bourns characteristics and parameters of a Bourns product set forth in its data sheet are based on laboratory conditions, and statements regarding the suitability of products for certain types of applications are based on Bourns knowledge of typical requirements in generic applications. The characteristics and parameters of a Bourns product in a user application may vary from the data sheet characteristics and parameters due to (i) the combination of the Bourns product with other components in the user s application, or (ii) the environment of the user application itself. The characteristics and parameters of a Bourns product also can and do vary in different applications and actual performance may vary over time.

10 Users should always verify the actual performance of the Bourns product in their specific devices and applications, and make their own independent judgments regarding the amount of additional test margin to design into their device or application to compensate for differences between laboratory and real world Bourns has explicitly designated an individual Bourns product as meeting the requirements of a particular industry standard ( , ISO/TS 16949) or a particular qualification ( , UL listed or recognized), Bourns is not responsible for any failure of an individual Bourns product to meet the requirements of such industry standard or particular qualification. Users of Bourns products are responsible for ensuring compliance with safety-related requirements and standards applicable to their devices or products are not recommended, authorized or intended for use in nuclear, lifesaving, life-critical or life-sustaining ap-plications, nor in any other applications where failure or malfunction may result in personal injury, death, or severe property or environmental damage.


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