AOD407 P-Channel Enhancement Mode Field …

1 AOD407 SymbolVDSVGSIDMIAREARTJ, Junction-to-Case BSteady-State C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At 10sRqJA C/WMaximum Junction-to-Ambient ASteady-State C/WWTA=70 and Storage Temperature Range-55 to 175 Power Dissipation ATA=25 avalanche energy L= CmJPower Dissipation BTC=25 CPDWTC=100 CAvalanche Current CContinuous DrainCurrent GMaximumUnitsParameterTC=25 CTC=100 C50 Absolute Maximum Ratings TA=25 C unless otherwise notedIDGate-Source VoltageDrain-Source Voltage-60 Pulsed Drain Current C-12-10-30P- channel Enhancement Mode Field Effect Transistor CVV 2025A-1223 Features VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115mW (VGS = -10V) RDS(ON) < 150mW (VGS = ) 100% UIS tested 100% RG tested General Description The AOD407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

2 With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* G D S TO252 DPAK TopView Bottom View G G D D S S D : August 1 of 6 C-5 IGSS 100nAVGS(th) (ON)-30A91115TJ=125 (10V) ( ) (on)9nstr10nstD(off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICEM aximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSVGS=0V, VDS=-30V, f=1 MHzGate Drain ChargeTotal Gate Charge (10V)VGS=-10V, VDS=-30V, ID=-12 ATurn-On Rise TimeTurn-Off DelayTimeVGS=-10V, VDS=-30V, RL= ,RGEN=3 WGate resistanceVGS=0V, VDS=0V, f=1 MHzTurn-Off Fall TimeSWITCHING PARAMETERST otal Gate Charge ( )Gate Source ChargeForward TransconductanceDiode Forward VoltagemWVGS= , ID=-8 AIS=-1A,VGS=0 VVDS=-5V, ID=-12 AVDS=0V, VGS= 20 VZero Gate Voltage Drain CurrentGate-Body leakage currentRDS(ON)Static Drain-Source On-ResistanceIF=-12A, dI/dt=100A/msElectrical Characteristics (TJ=25 C unless otherwise noted)

3 STATIC PARAMETERSP arameterConditionsIDSSmAGate Threshold VoltageVDS=VGS ID=-250mAVDS=-48V, VGS=0 VBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=-12A, dI/dt=100A/msDrain-Source Breakdown VoltageOn state drain currentID=-250mA, VGS=0 VVGS=-10V, VDS=-5 VVGS=-10V, ID=-12 AReverse Transfer CapacitanceA: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

4 C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). : August 2 of 6 AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0246810012345-ID(A) -VGS(Volts) Figure 2: Transfer Characteristics 801001201401601802002200510152025 RDS(ON) (mW) -ID (A) Figure 3: On-Resistance vs.

5 Drain Current and Gate Voltage + + (A) -VSD (Volts) Figure 6: Body-Diode Characteristics 25 C 125 C On-Resistance Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature VGS= ID=-8A VGS=-10V ID=-12A VGS= ID=-8A VGS=-10V ID=-12A 50100150200250300246810 RDS(ON) (mW) -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25 C 125 C VDS=-5V VGS= VGS=-10V ID=-12A 25 C 125 C 051015202530012345-ID (A) -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4V -6V -7V -10V -5V -3V : August 3 of 6 AOD407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS02468100481216-VGS (Volts) -Qg (nC) Figure 7: Gate-Charge Characteristics 020040060080010001200051015202530 Capacitance (pF) -VDS (Volts) Figure 8: Capacitance Characteristics Ciss (W) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Normalized Transient Thermal Resistance Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Coss Crss (Amps) -VDS (Volts) Figure 9.

6 Maximum Forward Biased Safe Operating Area (Note F) 100ms 10ms 1ms DC RDS(ON) limited TJ(Max)=175 C, TA=25 C VDS=-30V ID=-12A Single Pulse D=Ton/T TJ,PK=TC+ RqJC=3 C/W Ton T PD In descending order D= , , , , , , single pulse TJ(Max)=175 C TC=25 C 10ms : August 4 of 6 AOD407 TYPICAL ELECTRICAL AND THERMAL Normalized Transient Thermal Resistance Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Single Pulse D=Ton/T TJ,PK=TA+ RqJA=50 C/W Ton T PD In descending order D= , , , , , , single pulse (A), Peak Avalanche Current Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 01020304050600255075100125150175 Power Dissipation (W) TCASE ( C) Figure 13: Power De-rating (Note B) 024681012140255075100125150175 Current rating -ID(A) TCASE ( C) Figure 14: Current De-rating (Note B) DDDAVBVILt TA=25 C (W) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) TA=25 C : August 5 of 6 AOD407 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VVddVgsIdVgsRgDUTVDCVgsVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL-+2E = 1/2 LIARARBVDSSIARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & WaveformsVds -Vds +dI/dtRMrrVddVddQ = - Idttrr-Isd-VdsF-I-IVDCDUTVddVgsVdsVgsRLR gResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on) : August 6 of 6