P-Channel 20 V (D-S) MOSFET - Vishay - …

1 Vishay SiliconixSi2301 CDSD ocument Number: 68741S10-2430-Rev. C, 20 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load SwitchMOSFET PRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.)- at VGS = - V - at VGS = - V - TO-236 (SOT-23) S D To p View 2 3 1 Si2301 CDS (N1)** Marking CodeOrdering Information: Si2301 CDS-T1-E3 (Lead (Pb)-free) Si2301 CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)Notes: a. Based on TC = 25 Surface mounted on 1" x 1" FR4 t = 5 Maximum under steady state conditions is 175 MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)

2 Parameter Symbol Limit Unit Drain-Source Voltage VDS- 20 VGate-Source VoltageVGS 8 Continuous Drain Current (TJ = 150 C)TC = 25 CID- = 70 C- = 25 C- , cTA = 70 C- , cPulsed Drain Current IDM- 10 Continuous Source-Drain Diode Current TC = 25 CIS- = 25 C- , cMaximum Power Dissipation TC = 25 = 70 = 25 , cTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientb.

3 D 5 sRthJA120145 C/WMaximum Junction-to-Foot (Drain)Steady Number: 68741S10-2430-Rev. C, 25-Oct-10 Vishay SiliconixSi2301 CDSN otes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device SPECIFICATIONS (TJ = 25 C, unless otherwise noted)Parameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDS VGS = 0 V, ID = - 250 A - 20 VVDS Temperature Coefficient VDS/TJ ID = - 250 A - 18mV/ CVGS(th) Temperature Coefficient VGS(th)/TJ Threshold VoltageVGS(th)

4 VDS = VGS, ID = - 250 A - 1 VGate-Source LeakageIGSSVDS = 0 V, VGS = 8 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = - 20 V, VGS = 0 V - 1 AVDS = - 20 V, VGS = 0 V, TJ = 55 C - 10On-State Drain CurrentaID(on) VDS - 5 V, VGS = - V - 6 ADrain-Source On-State ResistanceaRDS(on) VGS = - V, ID = - A VGS = - V, ID = - A Transconductanceagfs VDS = - 5 V, ID = - A CapacitanceCiss VDS = - 10 V, VGS = 0 V, f = 1 MHz405pFOutput CapacitanceCoss 75 Reverse Transfer CapacitanceCrss 55 Total Gate ChargeQg VDS = - 10 V, VGS = - V, ID = - 3 = - 10 V, VGS = - V, ID = - 3 ChargeQgs ChargeQgd ResistanceRg f = 1 Tu r n - O n D e l a y T i m etd(on)

5 VDD = - 10 V, RL = 10 ID = - 1 A, VGEN = - V, Rg = 1 1120nsRise Timetr3560 Turn-Off Delay Timetd(off) 3050 Fall Timetf1020 Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 C- Diode Forward CurrentaISM- 10 Body Diode VoltageVSDIS = - A- Diode Reverse Recovery TimetrrIF = - A, dI/dt = 100 A/ s, TJ = 25 C3050nsBody Diode Reverse Recovery ChargeQrr2550nCReverse Recovery Fall Timeta15nsReverse Recovery Rise Timetb15 Document Number: 68741S10-2430-Rev. C, SiliconixSi2301 CDSTYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Output CharacteristicsOn-Resistance vs.

6 Drain Current and Gate VoltageGate ChargeVGS= Drain-to-SourceVoltage (V)- Drain Current (A)IDVGS= On-Resistance ( )RDS(on)ID- Drain Current (A)VGS= Gate-to-SourceVoltage (V)Qg- Total Gate Charge (nC)VGSID=3 AVDS=10 VVDS=5 VVDS=15 VTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction Gate-to-SourceVoltage (V)- Drain Current (A)IDTC= 25 CTC= 125 CTC= - 55 CCrss020040060080005101520 CissVDS- Drain-to-SourceVoltage (V)C - Capacitance (pF) 50- 250255075100125150TJ-Junction Temperature ( C)(Normalized)- On-ResistanceRDS(on)VGS= Number: 68741S10-2430-Rev. C, 25-Oct-10 Vishay SiliconixSi2301 CDSTYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Source-Drain Diode Forward Voltage Threshold (V)- Source Current (A) - 50 CTJ= 150 CTJ= 25 C- 50- 250255075100125150ID= 250 AVariance (V)VGS(th)TJ- Temperature ( C)ID=1mAOn-Resistance vs.

7 Gate-to-Source Voltage Single Pulse On-Resistance ( )RDS(on)VGS- Gate-to-SourceVoltage (V)TJ=25 CTJ= 125 CID= (s)Power (W)TA= 25 CSafe Operating AreaVDS- Drain-to-SourceVoltage (V)* VGS> minimumVGSatwhich RDS(on)is specified- Drain Current (A) 25 CSingle Pulse1ms10 ms100 s, DCBVDSS Limited100 LimitedbyRDS(on)*1s10 s100 sDocument Number: 68741S10-2430-Rev. C, SiliconixSi2301 CDSTYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations.

8 For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, Duration (s)Normalized Effective TransientThermal Cycle = Thermal Transient Impedance, Cycle = Duration (s)Normalized Effective TransientThermal :PDM1. Duty Cycle, D =2. Per Unit Base = RthJF=50 C/W3. TJM-TA=PDMZthJA(t)t1t24. Surface MountedVishay SiliconixPackage InformationDocument Number: (TO-236): 3-LEADbEE1132 See1DA2AA1 CSeating "CCL1 LqGauge PlaneSeating mmDimMILLIMETERS INCHES Min Max Min Max Refq3 8 3 8 ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Application Note 826 Vishay Siliconix Document Number: : 21-Jan-0825 APPLICATION NOTERECOMMENDED MINIMUM PADS FOR ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexReturn to IndexLegal Disclaimer Revision: 09-Jul-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

9 Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and regarding the suitability of products for certain types of applications are based on Vishay 's knowledge of typical requirements that are often placed on Vishay products in generic applications.

10 Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay 's terms and conditions of purchase, including but not limited to the warranty expressed included in this datasheet may direct users to third-party websites.