Automotive N- and P-Channel 100 V (D-S) 175 °C …

1 Siliconix S16-1462-Rev. A, 01-Aug-161 Document Number: 76453 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT N- and P-Channel 100 V (D-S) 175 C MOSFETFEATURES TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization:for definitions of compliance please Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %.c. When mounted on 1" square PCB (FR4 material). d. See solder profile ( ). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteedand is not required to ensure adequate bottom side solder Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

2 PRODUCT SUMMARYN-CHANNELP-CHANNELVDS (V)100-100 RDS(on) ( ) at VGS = 10 V (on) ( ) at VGS = V (A) and P-PairPackagePowerPAK SO-8L DualPowerPAK SO-8L DualTop View2G13S24G21S1D2D1N-Channel MOSFETD1G1S1S2G2D2P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLN-CHANNELP-CHANNELUNITD rain-Source Voltage VDS100-100V Gate-Source VoltageVGS 20 Continuous Drain CurrentTC = 25 C ID15 = 125 C Source Current (Diode conduction) aIS15-15 Pulsed Drain Current bIDM 40-21 Single Pulse Avalanche CurrentL = mHIAS13-6 Single Pulse Avalanche EnergyEAS Maximum Power Dissipation bTC = 25 C PD2727W TC = 125 C99 Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +175 C Soldering Recommendations (Peak temperature) d, e260 THERMAL RESISTANCE RATINGSPARAMETER SYMBOLN-CHANNELP-CHANNELUNITJ unction-to-AmbientPCB mount cRthJA8585 C/WJunction-to-Case (Drain) Siliconix S16-1462-Rev.

3 A, 01-Aug-162 Document Number: 76453 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDSVGS = 0 V, ID = 250 A N-Ch100--V VGS = 0 V, ID = -250 A P-Ch-100--Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 A = VGS, ID = -250 A Leakage IGSS VDS = 0 V, VGS = 20 VN-Ch-- 100nA P-Ch-- 100 Zero Gate Voltage Drain Current IDSS VGS = 0 VVDS = 100 VN-Ch--1 A VGS = 0 VVDS = -100 VP-Ch---1 VGS = 0 VVDS = 100 V, TJ = 125 C N-Ch--50 VGS = 0 VVDS = -100 V, TJ = 125 C P-Ch---50 VGS = 0 VVDS = 100 V, TJ = 175 C N-Ch--150 VGS = 0 VVDS = -100 V, TJ = 175 C P-Ch---150On-State Drain Current a ID(on) VGS = 10 VVDS 5 VN-Ch10--AVGS = -10 VVDS 5 VP-Ch-6--Drain-Source On-State Resistance a RDS(on)

4 VGS = 10 VID = 6 VGS = -10 VID = -6 = 10 VID = 6 A, TJ = 125 C = -10 VID = -6 A, TJ = 125 C = 10 VID = 6 A, TJ = 175 C = -10 VID = -6 A, TJ = 175 C = VID = 4 = VID = -4 Transconductance bgfs VDS = 15 V, ID = 6 AN-Ch-15-S VDS = -15 V, ID = -6 AP-Ch-7-Dynamic bInput CapacitanceCiss VGS = 0 V VDS = 25 V, f = 1 MHzN-Ch-420600pF VGS = 0 V VDS = -25 V, f = 1 MHzP-Ch-480650 Output CapacitanceCoss VGS = 0 V VDS = 25 V, f = 1 MHzN-Ch-260350 VGS = 0 V VDS = -25 V, f = 1 MHzP-Ch-250350 Reverse Transfer CapacitanceCrss VGS = 0 V VDS = 25 V, f = 1 MHzN-Ch-1725 VGS = 0 V VDS = -25 V, f = 1 MHzP-Ch-2030 Total Gate Charge cQg VGS = 10 V VDS = 50 V, ID = 1 AN-Ch-915nC VGS = -10 V VDS = -50 V, ID = -1 AP-Ch-1220 Gate-Source Charge cQgs VGS = 10 V VDS = 50 V, ID = 1 = -10 V VDS = -50 V, ID = -1 AP-Ch-2-Gate-Drain Charge cQgd VGS = 10 V VDS = 50 V, ID = 1 = -10 V VDS = -50 V, ID = -1 AP-Ch-3-Gate ResistanceRg f = 1 Delay Time ctd(on) VDD = 50 V, RL = 50 ,ID 1 A, VGEN = 10 V, Rg = 5 N-Ch-815nsVDD = -50 V, RL = 50 ,ID -1 A, VGEN = -10 V, Rg = 5 P-Ch-1220 Rise Time ctr VDD = 50 V, RL = 50 ,ID 1 A, VGEN = 10 V, Rg = 5 N-Ch-410 VDD = -50 V, RL = 50 ,ID -1 A, VGEN = -10 V, Rg = 5 P-Ch-510 Turn-Off Delay Time ctd(off)

5 VDD = 50 V, RL = 50 ,ID 1 A, VGEN = 10 V, Rg = 5 N-Ch-2035 VDD = -50 V, RL = 50 ,ID -1 A, VGEN = -10 V, Rg = 5 P-Ch-3050 Fall Time ctf VDD = 50 V, RL = 50 ,ID 1 A, VGEN = 10 V, Rg = 5 N-Ch-1730 VDD = -50 V, RL = 50 ,ID -1 A, VGEN = -10 V, Rg = 5 Siliconix S16-1462-Rev. A, 01-Aug-163 Document Number: 76453 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. c. Independent of operating beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

6 Exposure to absolute maximumrating conditions for extended periods may affect device Diode Ratings and Characteristics bPulsed Current aISMN-Ch--40AP-Ch---21 Forward VoltageVSDIS = 6 = -6 (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Siliconix S16-1462-Rev. A, 01-Aug-164 Document Number: 76453 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TYPICAL CHARACTERISTICS(TA = 25 C, unless otherwise noted)Output CharacteristicsTransconductanceCapacitan ceTransfer CharacteristicsOn-Resistance vs.

7 Drain CurrentGate Charge1010010001000008162432400246810 Axis Title1st line2nd line2nd lineID- Drain Current (A)VDS- Drain-to-Source Voltage (V)2nd lineVGS= 10 V thru 5 VVGS= 4 VVGS= 3 V1010010001000005101520250246810 Axis Title1st line2nd line2nd linegfs- Transconductance (S)ID- Drain Current (A)2nd lineTC= 25 CTC=-55 CTC= 125 C1010010001000001603204806408000 20406080100 Axis Title1st line2nd line2nd lineC - Capacitance (pF)VDS- Drain-to-Source Voltage (V)2nd Title1st line2nd line2nd lineID- Drain Current (A)VGS- Gate-to-Source Voltage (V)2nd lineTC= 125 CTC=-55 CTC= 25 Title1st line2nd line2nd lineRDS(on)- On-Resistance ( )ID- Drain Current (A)2nd lineVGS= VVGS= 10 V10100100010000024681003691215 Axis Title1st line2nd line2nd lineVGS- Gate-to-Source Voltage (V)Qg- Total Gate Charge (nC)2nd lineID= 1 AVDS= 50 Siliconix S16-1462-Rev.

8 A, 01-Aug-165 Document Number: 76453 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TYPICAL CHARACTERISTICS(TA = 25 C, unless otherwise noted)On-Resistance vs. Junction TemperatureOn-Resistance vs. Gate-to-Source VoltageDrain Source Breakdown vs. Junction TemperatureSource Drain Diode Forward VoltageThreshold VoltageSafe Operating 0 255075100125150175 Axis Title1st line2nd line2nd lineRDS(on)- On-Resistance (Normalized)TJ- Junction Temperature ( C)2nd lineID= 7 AVGS= 10 VVGS= Title1st line2nd line2nd lineRDS(on)- On-Resistance ( )VGS- Gate-to-Source Voltage (V)2nd lineTJ= 25 CTJ= 150 C10100100010000105109113117121125-50 -250255075 100 125 150 175 Axis Title1st line2nd line2nd lineVDS- Drain-to-Source Voltage (V)TJ- Junction Temperature ( C)2nd lineID= 1 Title1st line2nd line2nd lineIS- Source Current (A)VSD- Source-to-Drain Voltage (V)2nd lineTJ= 150 CTJ= 25 -250255075 100 125 150 175 Axis Title1st line2nd line2nd lineVGS(th)Variance (V)TJ- Temperature ( C)

9 2nd lineID= 5 mAID= 250 Title1st line2nd line2nd lineID- Drain Current (A)VDS- Drain-to-Source Voltage (V)(1)VGS> minimum VGSat which RDS(on)is specifiedIDMlimitedLimited by RDS(on)(1)TC= 25 CSingle pulseBVDSS limited100 ms, 1 s, 10 s, DC10 ms1 ms100 Siliconix S16-1462-Rev. A, 01-Aug-166 Document Number: 76453 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TYPICAL CHARACTERISTICS(TA = 25 C, unless otherwise noted)Normalized Thermal Transient Impedance, Junction-to-AmbientNormalized Thermal Transient Impedance, Junction-to-CaseNote The characteristics shown in the two graphs- Normalized Transient Thermal Impedance Junction-to-Ambient (25 C)- Normalized Transient Thermal Impedance Junction-to-Case (25 C)are given for general guidelines only to enable the user to get a ball park indication of part capabilities.

10 The data are extracted from singlepulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the partmounted on printed circuit board - FR4, size 1" x 1" x ", double sided with 2 oz. copper, 100 % on both sides. The part capabilitiescan widely vary depending on actual application parameters and operating pulseDuty cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal Impedance1. Duty cycle, D =2. Per unit base = RthJA = 85 C/W3. TJM - TA = PDMZthJA(t)t1t2t1t2 Notes:4. Surface Title1st line2nd lineNormalized Effective TransientThermal ImpedanceSquare Wave Pulse Duration (s)2nd pulseDuty Cycle = Siliconix S16-1462-Rev. A, 01-Aug-167 Document Number: 76453 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.