COMPLEMENTARY PAIR ENHANCEMENT MODE …

1 DMC3400 SDW Document number: DS37690 Rev. 1 - 2 1 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(ON) max ID max TA = +25 C Q1 30 @ VGS = 10V @ VGS = Q2 -30 @ VGS = -10V @ VGS = Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions DC-DC Converters Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

2 Green Device (Note 3) Mechanical Data Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC3400 SDW-7 SOT363 3000/Tape & Reel DMC3400 SDW-13 SOT363 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Marking Information Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 Code B C D E F G H Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT363 Top View CSI = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) ESD PROTECTED CSI YM Top View Pin out S2D2D1S1G2G1Q2 P-CHANNEAL Q1 N-CHANNEAL D2S2G2 GateProtection DiodeD1S1G1 GateProtection Diode DMC3400 SDW Document number: DS37690 Rev. 1 - 2 2 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Maximum Ratings (@TA = +25 C, unless otherwise specified.)

4 Characteristic Symbol Value_Q1 Value_Q2 Units Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS 20 20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25 C TA = +70 C ID A Maximum Continuous Body Diode Forward Current (Note 6) IS A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 4 -3 A Thermal Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient (Note 5) Steady State R JA 406 C/W Total Power Dissipation (Note 6) PD W Thermal Resistance, Junction to Ambient (Note 6) Steady State R JA 319 C/W Thermal Resistance, Junction to Case R JC 126 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics N Channel Q1 (@TA = +25 C, unless otherwise specified.)

5 Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250 A Zero Gate Voltage Drain Current IDSS - - 1 A VDS = 24V, VGS = 0V Gate-Source Leakage IGSS - - 10 A VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) - V VDS = VGS, ID = 250 A Static Drain-Source On-Resistance RDS(ON) - VGS = 10V, ID = - VGS = , ID = Diode Forward Voltage VSD - V VGS = 0V, IS = DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 55 - pF VDS = 15V, VGS = 0V, f = Output Capacitance Coss - - pF Reverse Transfer Capacitance Crss - - pF Gate Resistance Rg - 92 - VDS = VGS = 0V, f = Total Gate Charge (VGS = ) Qg - - nC VDS = 10V, ID = 250mA Total Gate Charge (VGS = 10V) Qg - - nC Gate-Source Charge Qgs - - nC Gate-Drain Charge Qgd - - nC Turn-On Delay Time tD(ON) - - ns VGS = 10V, VDS = 30V, ID = 100mA, RG = 1 Turn-On Rise Time tR - - ns Turn-Off Delay Time tD(OFF) - - ns Turn-Off Fall Time tF - - ns DMC3400 SDW Document number: DS37690 Rev.

6 1 - 2 3 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Electrical Characteristics P Channel Q2 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS - - -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS - - 10 A VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1 - V VDS = VGS, ID = -250 A Static Drain-Source On-Resistance RDS(ON) - VGS = -10V, ID = - VGS = , ID = Diode Forward Voltage VSD - V VGS = 0V, IS = DYNAMIC CHARACTERISTICS (Note 8)

7 Input Capacitance Ciss - 54 - pF VDS = -15V, VGS = 0V, f = Output Capacitance Coss - 10 - pF Reverse Transfer Capacitance Crss - - pF Gate Resistance Rg - 240 - VDS = VGS = 0V, f = Total Gate Charge (VGS = ) Qg - - nC VDS = -10V, ID = Total Gate Charge (VGS = -10V) Qg - - nC Gate-Source Charge Qgs - - nC Gate-Drain Charge Qgd - - nC Turn-On Delay Time tD(ON) - - ns VGS = -10V, VDD = -15V, ID = , RG = 1 Turn-On Rise Time tR - - ns Turn-Off Delay Time tD(OFF) - 35 - ns Turn-Off Fall Time tF - 19 - ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect.

8 8. Guaranteed by design. Not subject to product testing. DMC3400 SDW Document number: DS37690 Rev. 1 - 2 4 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Typical Characteristics - N-CHANNEL , DRAIN CURRENT(A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 1. Typical Output CharacteristicVGS= , DRAIN CURRENT(A)VGS,GATE-SOURCE VOLTAGE(V)Figure2. Typical Transfer CharacteristicVDS=5 VTA=150 CTA=125 CTA=85 CTA=-55 CTA=25 (ON), DRAIN-SOURCE ON-RESISTANCE( )ID,DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS= (ON), DRAIN-SOURCE ON-RESISTANCE( )VGS, GATE-SOURCE VOLTAGE(V) Figure 4.

9 Typical Transfer Characteristic ID=590mAID= (ON), DRAIN-SOURCE ON-RESISTANCE( )ID, DRAIN CURRENT (A)Figure 5. Typical On-Resistance vs. Drain Current and TemperatureVGS= CTA=25 CTA=85 CTA=125 CTA=150 (ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)TJ, JUNCTION TEMPERATURE( C)Figure 6. On-Resistance Variation with TemperatureVGS= , ID=200mAVGS=10V, ID=590mA DMC3400 SDW Document number: DS37690 Rev. 1 - 2 5 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW (ON), DRAIN-SOURCE ON-ESISTANCE( )TJ, JUNCTION TEMPERATURE ( C)Figure 7. On-Resistance Variation with TemperatureVGS= , ID=200mAVGS=10V, ID= (TH), GATE THESHOLD VOLTAGE(V)TJ, JUNCTION TEMPERATURE( C)Figure 8.

10 Gate Theshold Variation vs. Junction TemperatureID=250 AID= , SOURCE CURRENT(A)VSD, SOURCE-DRAIN VOLTAGE (V)Figure 9. Diode Forward Voltage vs. CurrentTA=-55 CTA=25 CTA=85 CTA=125 CTA=150 CVGS=0V1 10 100 051015202530CT, JUNCTION CAPACITANCE(pF)VDS, DRAIN-SOURCE VOLTAGE(V)Figure 10. Typical Junction Capacitancef= (V)Qg (nC)Figure 11. Gate ChargeVDS=10V, ID= , DRAIN CURRENT(A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 12. SOA, Safe Operation AreaTJ(Max)=150 CTA=25 CVGS=10 VSingle PulseDUT on 1*MRP BoardRDS(ON)LimitedDCPW=10s PW=1s PW=100ms PW=10ms PW=1ms PW=100 s DMC3400 SDW Document number: DS37690 Rev. 1 - 2 6 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Typical Characteristics - P-CHANNEL 012345ID, DRAIN CURRENT(A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 13.