MCP1406/07 – 6A High-Speed Power MOSFET Drivers

1 2006-2016 Microchip Technology 1 MCP1406/07 Features High Peak Output Current: (typical) Low Shoot-Through/Cross-Conduction Current in Output Stage Wide Input Supply Voltage Operating High Capacitive Load Drive Capability:- 2500 pF in 20 ns- 6800 pF in 40 ns Short Delay Times: 40 ns (typical) Matched Rise/Fall Times Low Supply Current:- With Logic 1 Input 130 A (typical)- With Logic 0 Input 35 A (typical) Latch-Up Protected: Will Withstand Reverse Current Logic Input Will Withstand Negative Swing up to 5V Pin compatible with the TC4420/TC4429 devices Space-saving 8-Pin SOIC, PDIP and 8-Pin 6 x 5 mm DFN PackagesApplications Switch Mode Power Supplies Pulse Transformer Drive Line Drivers Motor and Solenoid DriveGeneral DescriptionThe MCP1406/07 devices are a family ofbuffers/ MOSFET Drivers that feature a single-outputwith 6A peak drive current capability, low shoot-throughcurrent, matched rise/fall times and propagation delaytimes.

2 These devices are pin-compatible and areimproved versions of the TC4420/TC4429 MCP1406/07 MOSFET Drivers can easily chargeand discharge 2500 pF gate capacitance in under20 ns, provide low enough impedances (in both the ONand OFF states) to ensure that intended state of theMOSFETs will not be affected, even by large input to the MCP1406/07 may be driven directlyfrom either TTL or CMOS (3V to 18V).These devices are highly latch-up resistant under anyconditions that fall within their Power and voltageratings. They are not subject to damage when up to 5 Vof noise spiking (of either polarity) occurs on the groundpin.

3 All terminals are fully protected againstelectrostatic discharge (ESD), up to kV (HBM) and400V (MM).The MCP1406/07 single-output 6A MOSFET driverfamily is offered in both surface-mount andpin-through-hole packages with a -40 C to +125 Ctemperature rating, making it useful in any widetemperature range High-Speed Power MOSFET DriversMCP1406/07DS20002019C-page 2 2006-2016 Microchip Technology Types12345678 VDDVDDOUTOUTGNDGNDINPUTNC8-Pin PDIP/SOICMCP1407 MCP1406 VDDOUTOUTGNDVDDGNDINPUTNC5-Pin TO-220 MCP1407 MCP1406 VDDOUTOUTGNDTab is common to VDDNote 1:Duplicate pins must both be connected for proper :Exposed pad of the DFN package is electrically isolated.

4 See Table 6x5 DFN-S(2) 2006-2016 Microchip Technology 3 MCP1406/07 Functional Block Diagram(1)Effective Input C = 25 pF MCP1406 Inverting MCP1407 Non-Inverting InputGNDVDD300 mV 1:Unused inputs should be A OutputOutputMCP1406/07DS20002019C-page 4 2006-2016 Microchip Technology CHARACTERISTICSA bsolute Maximum Ratings Supply Voltage ..+20 VInput Voltage ..(VDD + ) to (GND -5V)Input Current (VIN > VDD) ..50 mAPackage Power Dissipation (TA <= +70 C)DFN-S .. Protection on all Pins ..2 kV (HBM), 400V (MM) Notice: Stresses above those listed under MaximumRatings may cause permanent damage to the is a stress rating only and functional operation ofthe device at those or any other conditions above thoseindicated in the operational sections of thisspecification is not intended.

5 Exposure to maximumrating conditions for extended periods may affectdevice CHARACTERISTICSE lectrical Specifications: Unless otherwise indicated, TA = +25 C, with VDD 1 , High Input VLogic 0 , Low Input VoltageVIL VInput CurrentIIN 10 10 A0V VIN VDDI nput VoltageVIN-5 VDD+ Output VoltageVOHVDD VDC TestLow Output VoltageVOL TestOutput Resistance, HighROH IOUT = 10 mA, VDD = 18 VOutput Resistance, LowROL IOUT = 10 mA, VDD = 18 VPeak Output CurrentIPK 6 AVDD 18V (Note 1)Continuous Output 1, Note 2 Latch-Up Protection Withstand Reverse CurrentIREV ADuty cycle 2%, t 300 sSwitching Time (Note 3)Rise TimetR 20 30 nsFigure 4-1, Figure 4-2 CL = 2500 pFFall TimetF 20 30 nsFigure 4-1, Figure 4-2CL = 2500 pFDelay TimetD1 40 55 nsFigure 4-1, Figure 4-2 Delay TimetD2 40 55 nsFigure 4-1, Figure 4-2 Power SupplySupply Supply CurrentIS 130250 AVIN = 3 VIS 35100 AVIN = 0 VNote 1:Tested during characterization, not production :Valid for AT (TO-220) and MF (DFN-S) packages only.

6 TA = +25 C3:Switching times ensured by design. 2006-2016 Microchip Technology 5 MCP1406/07DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)Electrical Specifications: Unless otherwise indicated, operating temperature range with VDD 1 , High Input VLogic 0 , Low Input VoltageVIL CurrentIIN-10 +10 A0V VIN VDDI nput VoltageVIN-5 VDD+ Output VoltageVOHVDD VDC TESTLow Output VoltageVOL TESTO utput Resistance, HighROH IOUT = 10 mA, VDD = 18 VOutput Resistance, LowROL IOUT = 10 mA, VDD = 18 VSwitching Time (Note 1)Rise TimetR 2540nsFigure 4-1, Figure 4-2CL = 2500 pFFall TimetF 2540nsFigure 4-1, Figure 4-2CL = 2500 pFDelay TimetD1 5065nsFigure 4-1, Figure 4-2 Delay TimetD2 5065nsFigure 4-1, Figure 4-2 Power SupplySupply Supply CurrentIS 200500 AVIN = 3V 50150 VIN = 0 VNote 1.

7 Switching times ensured by 6 2006-2016 Microchip Technology CHARACTERISTICSE lectrical Specifications: Unless otherwise noted, all parameters apply with VDD RangesSpecified Temperature RangeTA-40 +125 CMaximum Junction TemperatureTJ +150 CStorage Temperature RangeTA-65 +150 CPackage Thermal ResistancesJunction-to-Ambient Thermal Resistance, 8-L 6x5 DFN JA C/WNote 1 Junction-to-Ambient Thermal Resistance, 8-L PDIP JA C/WNote 1 Junction-to-Ambient Thermal Resistance, 8-L SOIC JA C/WNote 1 Junction-to-Ambient Thermal Resistance, 5-L TO-220 JA C/WNote 1 Junction-to-Case (Bottom) Thermal Resistance, 5-L TO-220 JC(BOT) C/WNote 2 Junction-to-Top Characterization Parameter, 8-L 6x5 DFN C/WNote 1 Junction-to-Top Characterization Parameter, 8-L PDIP C/WNote 1 Junction-to-Top Characterization Parameter, 8-L SOIC C/WNote 1 Junction-to-Top Characterization Parameter, 5-L TO-220 C/WNote 1 Junction-to-Board Characterization Parameter, 8-L 6x5 DFN C/WNote 1 Junction-to-Board Characterization Parameter, 8-L PDIP C/WNote 1 Junction-to-Board Characterization Parameter, 8-L SOIC C/WNote 1 Junction-to-Board Characterization Parameter, 5-L TO-220 C/WNote 1 Note 1.

8 Parameter is determined using a High 2S2P 4-layer board, as described in JESD 51-7, as well as in JESD 51-5, for packages with exposed :Parameter is determined using a 1S0P 2-layer board with a cold plate attached to indicated location. 2006-2016 Microchip Technology 7 MCP1406 PERFORMANCE CURVESNote: Unless otherwise indicated, TA= +25 C with VDD 2-1:Rise Time vs. Supply 2-2:Rise Time vs. Capacitive 2-3:Rise and Fall Times vs. 2-4:Fall Time vs. Supply 2-5:Fall Time vs. Capacitive 2-6:Propagation Delay vs. Supply :The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only.

9 The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range ( , outside specified Power supply range) and therefore outside the warranted 6 8 1012141618 Supply Voltage (V)Rise Time (ns)100 pF4,700 pF1,000 pF6,800 pF2,500 pF10,000 pF8,200 pF01020304050607080100100010000 Capacitive Load (pF)Rise Time (ns)5V15V10V051015202530-40 -25 -10 520 35 50 65 80 95 110 125 Temperature (oC)Rise and Fall Time (ns)VDD = 18 VtRISEtFALL010203040506070804 6 8 1012141618 Supply Voltage (V)Fall Time (ns)100 pF4,700 pF1,000 pF6,800 pF2,500 pF10,000 pF8,200 pF010203040506070100100010000 Capacitive Load (pF)Fall Time (ns)

10 5V15V10V3545556575854681012141618 Supply Voltage (V)Propagation Delay (ns)VIN = 5 VtD1tD2 MCP1406/07DS20002019C-page 8 2006-2016 Microchip Technology : Unless otherwise indicated, TA = +25 C with VDD 2-7:Propagation Delay Time vs. Input 2-8:Propagation Delay Time vs. 2-9:Quiescent Current vs. Supply 2-10:Quiescent Current vs. 2-11:Input Threshold vs. Supply 2-12:Input Threshold vs. Amplitude (V)Propagation Delay (ns)VDD = 12 VtD1tD2303540455055-40 -25 -10 520 35 50 65 80 95 110 125 Temperature (oC)Propagation Delay (ns)VDD = 18 VVIN = 5 VtD1tD2020406080100120140160180468101214 1618 Supply Voltage (V)Quiescent Current ( A)INPUT = 1 INPUT = 0050100150200250-40 -25 -10 520 35 50 65 80 95 110 125 Temperature (oC)Quiescent Current ( A)Input = LowVDD = 18 VInput = 6 8 1012141618 Supply Voltage (V)Input Threshold (V) -25 -10 520 35 50 65 80 95 110 125 Temperature (oC)Input Threshold (V)VDD = 12 VVHIVLO 2006-2016 Microchip Technology 9 MCP1406/07 Note.