38V P-Channel MOSFET - Alpha & Omega Semiconductor

1 SymbolVDSVGSIDMTJ, TSTGS ymbolTypMax26405075R JL1424 WMaximum Junction-to-Lead CSteady-State C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At 10sR JA C/WMaximum Junction-to-Ambient ASteady-State C/W 25 Gate-Source VoltageDrain-Source Voltage-38 Continuous DrainCurrent AMaximumUnitsParameterTA=25 CTA=70 CAbsolute Maximum Ratings TA=25 C unless otherwise notedVV-11-50 Pulsed Drain Current BPower Dissipation ATA=25 CJunction and Storage Temperature RangeAPD to 150TA=70 CID-14AO442538V P-Channel MOSFETP roduct SummaryVDS (V) = -38 VID = -14A (VGS = -20V)RDS(ON) < 10m (VGS = -20V)RDS(ON) < 11m (VGS = -10V)ESD Rating: 4000V HBM100% UIS Tested100% Rg TestedGeneral DescriptionThe AO4425 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gatecharge with a 25V gate rating.

2 This device is suitablefor use as a load switch or in PWM applications. It isESD View Bottom ViewDDDDSSSGA lpha & Omega Semiconductor , C-500 1 A 10 AVGS(th) (ON) (on) (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT , VGS= 25 VBody Diode Reverse Recovery TimeVGS=0V, VDS=-20V, f=1 MHzSWITCHING PARAMETERST otal Gate ChargeVGS=-10V, VDS=-20V, ID=-14 AGate Source ChargeGate Drain ChargeRDS(ON)Static Drain-Source On-ResistanceBody Diode Reverse Recovery ChargeIF=-14A, dI/dt=100A/ sDrain-Source Breakdown VoltageOn state drain currentID=-250 A, VGS=0 VVGS=-10V, VDS=-5 VVGS=-20V, ID=-14 AReverse Transfer CapacitanceIF=-14A, dI/dt=100A/ sForward TransconductanceElectrical Characteristics (TJ=25 C unless otherwise noted)

3 STATIC PARAMETERSP arameterConditionsIDSSnAGate Threshold VoltageVDS=VGS ID=-250 AVDS=-30V, VGS=0 VZero Gate Voltage Drain CurrentIGSSGate-Body leakage currentVDS=0V, VGS= 20 VDiode Forward Voltagem VGS=-10V, ID=-14 AIS=-1A,VGS=0 VVDS=-5V, ID=-14 ATurn-On Rise TimeTurn-Off DelayTimeVGS=-10V, VDS=-20V, RL= ,RGEN=3 Gate resistanceVGS=0V, VDS=0V, f=1 MHzTurn-Off Fall TimeMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSA: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 value in any given application depends on the user's specific board design.

4 The current rating is based on the t 10s thermalresistance : Repetitive rating, pulse width limited by junction The R JA is the sum of the thermal impedence from junction to lead R JL and lead to The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 C. TheSOA curve provides a single pulse 3 : Nov. 2010 Alpha & Omega Semiconductor , ELECTRICAL AND THERMAL (Volts)Fig 1: On-Region Characteristics-ID (A)VGS= (Volts)Figure 2: Transfer Characteristics-ID(A)25 C125 CVDS=-5V678910051015202530-ID (A)Figure 3: On-Resistance vs.

5 Drain Current andGate VoltageRDS(ON) (m ) + + (Volts)Figure 6: Body-Diode Characteristics-IS (A)25 C125 ( C)Figure 4: On-Resistance vs. JunctionTemperatureNormalized On-ResistanceVGS=-20 VID = -14 AVGS=-10 VID = -14A510152048121620-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageRDS(ON) (m )ID=-14A25 C125 CVGS=-10 VVGS=-20 VAlpha & Omega Semiconductor , ELECTRICAL AND THERMAL (nC)Figure 7: Gate-Charge Characteristics-VGS (Volts)VDS=-15 VID=-14A010002000300040005000010203040-V DS (Volts)Figure 8: Capacitance CharacteristicsCapacitance (pF) Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)Power (W) Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceZ JA Normalized TransientThermal (Volts)-ID (Amps)Figure 9.

6 Maximum Forward Biased SafeOperating Area (Note E)100 (ON)limitedTJ(Max)=150 CTA=25 C10 sSingle PulseD=Ton/TTJ,PK=TA+ JAR JA=40 C/WIn descending orderD= , , , , , , single pulseTJ(Max)=150 CTA=25 CTonTPDA lpha & Omega Semiconductor .