Transcription of UNISONIC TECHNOLOGIES CO., LTD
1 UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 1 of 6 Copyright 2018 UNISONIC TECHNOLOGIES Co., Ltd , 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2N7002L-AE2-R 2N7002G-AE2-R SOT-23-3 G S D Tape Reel Note: Pin Assignment: G: Gate S: Source D: Drain MARKING 3PL: Lead FreeG.
2 Halogen Free 2N7002 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 6 ABSOLUTE MAXIMUM RATINGS (TA=25 C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1M )
3 VDGR 60 V Continuous 20 Gate Source Voltage Non Repetitive(tP<50 s) VGSS 40 V Continuous 300 Drain Current Pulsed ID 800 mA Power Dissipation 200 mW Derated Above 25 C PD mW/ CJunction Temperature TJ + 150 C Storage Temperature TSTG -55 ~ +150 C Note.
4 Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient JA 625 C/W Junction to Case JC 215 C/W ELECTRICAL CHARACTERISTICS (TA=25 C.)
5 Unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITOFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 V Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 1 AIGSSF VGS=20V, VDS=0V 100nAGate-Source Leakage Current IGSSR VGS=-20V, VDS=0V -100nAON CHARACTERISTICS (Note) Gate Threshold Voltage VGS(TH)
6 VGS=VDS, ID=250 A 1 VGS=10V, ID=300mA On-Voltage VDS (ON) VGS= , ID=50mA VGS=10V, ID=300mA Static Drain-Source On-Resistance RDS (ON)VGS=.
7 ID=50mA DYNAMIC CHARACTERISTICS Input Capacitance CISS 50 pFOutput Capacitance COSS 25 pFReverse Transfer Capacitance CRSS VDS=25V, VGS=0V.
8 F= 5 pFTurn-On Time tON 20 nSTurn-Off Time tOFF VDD=30V, RL=150 , ID=200mA, VGS=10V, RG=25 20 nSDRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS 300mAMaximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VSD VGS=0V, Is=300mA (Note) Note: Pulse Test.
9 Pulse Width 300 s, Duty Cycle 2N7002 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 6 TEST CIRCUIT AND WAVEFORM Fig. 1 VGSRGENVDDVINRLVOUTDUTGDS Pulse WidthInput, VINO utput, VOUTtONtOFFtD(OFF)tRtD(ON)tFInverted10%1 0%10%50%50%90%90%90%Fig. 2 Switching Waveforms 2N7002 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 6 TYPICAL CHARACTERISTICS Drain-Source Current, ID(A)Normalized Drain-SourceON-Resistance, RDS (ON)( ) 2 C25 CNormalized Drain-SourceON- Resistance, RDS(ON)( )Junction Temperature, TJ( C)On-Resistance Varisation with TemperatureVGS=10 VID=300mANormalized Drain-Source ON-Resistance, RDS (ON)( )Drain Current,ID(A)On-Resistance Varisation with DrainCurrent and Temperature Drain Current, ID(A)Normalized Gate-Source ThresholdVoltage, VGS(TH)(V)
10 2N7002 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 6 TYPICAL CHARACTERICS (Cont.) Drain-Source BreakdownVoltage, BVDSS(V)Junction Temperature, TJ( C)Breakdown Voltage Varisationwith TemperatureID = 250 ABody Diode Forward Voltage, VSD(V)Body Diode Forward Voltage Varisationwith TemperatureReverse Drain Current, IS(A)VGS=0 VTJ =125 C25 C (pF)Drain to Source Voltage, VDS(V)Capacitance CharacteristicsVGS=0Vf=1 MHzCRSSCossCISSGate Charge, Qg (nC)Gate Charge CharacteristicsGate-Source Voltage, VGS(V)
