AO4409 Rev.8.0 Rohs - Alpha & Omega Semiconductor

1 AO4409 . 30V P-Channel MOSFET. General Description Product Summary The AO4409 uses advanced trench technology to provide VDS -30V. excellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -15A. device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V) < . applications. RDS(ON) (at VGS = ) < 12m . 100% UIS Tested * RoHS and Halogen-Free Compliant 100% Rg Tested SOIC-8. D. Top View Bottom View D. D. D. D. G G. S S. S. S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V. Gate-Source Voltage VGS 20 V. Continuous Drain TA=25 C -15.

2 ID. Current TA=70 C A. C. Pulsed Drain Current IDM -80. Avalanche Current C IAS, IAR 30 A. Avalanche energy L= C EAS, EAR 135 mJ. TA=25 C PD W. Power Dissipation B TA=70 C 2. Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 31 40 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 59 75 C/W. Maximum Junction-to-Lead Steady-State R JL 16 24 C/W. : July 2013 Page 1 of 5. AO4409 . Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS.

3 BVDSS Drain-Source Breakdown Voltage ID=-250 A, VGS=0V -30 V. VDS=-30V, VGS=0V -5. IDSS Zero Gate Voltage Drain Current A. TJ=55 C -25. IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=-250 A V. ID(ON) On state drain current VGS=-10V, VDS=-5V -80 A. VGS=-10V, ID=-15A m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C VGS= , ID=-10A 12 m . gFS Forward Transconductance VDS=-5V, ID=-15A 35 50 S. VSD Diode Forward Voltage IS=-1A,VGS=0V -1 V. IS Maximum Body-Diode Continuous Current -5 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 5270 6400 pF. Coss Output Capacitance VGS=0V, VDS=-15V, f=1 MHz 945 pF.

4 Crss Reverse Transfer Capacitance 745 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz 2 3 . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 100 120 nC. Qg( ) Total Gate Charge nC. VGS=-10V, VDS=-15V, ID=-15A. Qgs Gate Source Charge nC. Qgd Gate Drain Charge 23 nC. tD(on) Turn-On DelayTime 14 ns tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=1 , ns tD(off) Turn-Off DelayTime RGEN=3 ns tf Turn-Off Fall Time ns trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/ s 45 ns Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/ s 28 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz.

5 Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.

6 Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. : July 2013 Page 2 of 5. AO4409 . TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 60 60. -4V VDS=-5V. 50 50. -6V. 40 -10V 40. -ID (A). -ID(A). 30 30.

7 20 20 125 C. 10 10 25 C. VGS=-3V. 0 0. 0 1 2 3 4 5 0 1 2 3 4. -VDS (Volts) -VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 12 ID=-15A. VGS= Normalized On-Resistance 10. VGS=-10V. ). RDS(ON) (m . 8. 17. 5. 6 2. VGS=-10V 10. 1 VGS= 4. 2 0 5 10 15 20 25 0 25 50 75 100 125 150 175. -ID (A). Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C) 0. Voltage (Note E) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E). 20 +02. ID=-15A. +01. 15 40. +00. 125 . ). RDS(ON) (m . 125 . -IS (A). 10. 25 25 . 5. 0 2 4 6 8 10 -VGS (Volts) -VSD (Volts).

8 Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). : July 2013 Page 3 of 5. AO4409 . TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 8000. VDS=-15V. ID=-15A 7000. 8. 6000 Ciss Capacitance (pF). 5000. -VGS (Volts). 6. 4000. 4 3000. 2000 Coss 2. 1000. Crss 0 0. 0 20 40 60 80 100 120 0 5 10 15 20 25 30. Qg (nC) -VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 10000. TA=25 C. 100 s 1000. RDS(ON). Power (W). 1ms -ID (Amps). limited 100. 10ms 10. TJ(Max)=150 C 10s TA=25 C DC. 1. 10 1000. 1 10 100. -VDS (Volts) Pulse Width (s).

9 Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F). Operating Area (Note F). 10. D=Ton/T In descending order Z JA Normalized Transient TJ,PK=TA+ JA D= , , , , , , single pulse Thermal Resistance 1 R JA=75 C/W. PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 11: Normalized Maximum Transient Thermal Impedance (Note F). : July 2013 Page 4 of 5. AO4409 . Gate Charge Test Circuit & Waveform Vgs Qg - -10V. VDC. - + Vds Qgs Qgd VDC. +. DUT. Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds ton toff td(on) tr t d(off) tf Vgs - Vgs DUT VDC.

10 Vdd 90%. Rg +. Vgs 10%. Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2. L E AR= 1/2 LIAR. Vds Id Vds - BVDSS. Vgs Vgs VDC. Vdd Rg + Id I AR. DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L -Isd -I F. Isd dI/dt + Vdd -I RM. Vgs VDC. Vdd Ig - -Vds : July 2013 Page 5 of 5.