BF245A; BF245B; BF245C N-channel silicon field-effect ...

1 DATA SHEETP roduct specificationSupersedes data of April 19951996 Jul 30 DISCRETE SEMICONDUCTORS BF245A; BF245B; BF245CN- channel silicon field-effect transistors1996 Jul 302 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; BF245 CFEATURES Interchangeability of drain and source connections Frequencies up to 700 LF, HF and DC purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or outline (TO-92 variant) and , halfpage132 MAM257sdgQUICK REFERENCE DATA voltage 30 VVGS offgate-source cut-off voltageID=10nA; VDS=15V 8 VVGSO gate-source voltageopen drain 30 VIDSS drain currentVDS=15V; VGS=0 BF245A2 15mABF245C12 25mAPtottotal power dissipationTamb=75 C 300mW yfs forward transfer admittanceVDS=15V; VGS=0; f=1kHz; Tamb=25 C3 transfer capacitanceVDS=20V; VGS= 1V; f=1 MHz; Tamb=25 C pF1996 Jul 303 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B.

2 BF245 CLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).Note1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm 10 CHARACTERISTICSSTATIC CHARACTERISTICSTj=25 C; unless otherwise Measured under pulse conditions: tp= 300 s; voltage 30 VVGDO gate-drain voltageopen source 30 VVGSO gate-source voltageopen drain 30 VIDdrain current 25mAIGgate current 10mAPtottotal power dissipationup to Tamb=75 C; 300mWup to Tamb=90 C; note 1 300mWTstgstorage temperature 65+150 CTjoperating junction temperature 150 CSYMBOLPARAMETERCONDITIONSVALUEUNITRth j-athermal resistance from junction to ambient in free air250K/Wthermal resistance from junction to ambient 200 (BR)GSSgate-source breakdown voltageIG= 1 A; VDS=0 30 VVGS offgate-source cut-off voltageID=10nA; VDS=15V voltageID=200 A; VDS=15 VBF245A currentVDS=15V; VGS=0; cut-off currentVGS= 20 V; VDS=0 5nAVGS= 20 V; VDS=0; Tj=125 C A1996 Jul 304 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B.

3 BF245 CDYNAMIC CHARACTERISTICSC ommon source; Tamb=25 C; unless otherwise capacitanceVDS=20V; VGS= 1V; f=1 MHz 4 pFCrsreverse transfer capacitance VDS=20V; VGS= 1V; f=1 MHz pFCosoutput capacitanceVDS=20V; VGS= 1V; f=1 MHz pFgisinput conductanceVDS=15V; VGS=0; f=200 MHz 250 Sgosoutput conductanceVDS=15V; VGS=0; f=200 MHz 40 S yfs forward transfer admittanceVDS=15V; VGS=0; f=1kHz3 ; VGS=0; f=200 MHz 6 mS yrs reverse transfer admittanceVDS=15V; VGS=0; f=200 MHz mS yos output admittanceVDS=15V; VGS=0; f=1kHz 25 Sfgfscut-off frequencyVDS=15V; VGS=0; gfs= of its value at 1 kHz 700 MHzFnoise figureVDS=15V; VGS=0; f=100 MHz; RG=1k (common source);input tuned to minimum noise dBhandbook, halfpage 10 10 3 10 2 10 1 1150500 MGE785100typTj ( C)IGSS(nA) leakage current as a function of junction temperature; typical ; VGS= 20 characteristics for BF245A; typical , halfpageVGS (V)ID(mA)60 40 2 MGE78954321 VDS=15V; Tj=25 Jul 305 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; BF245 Chandbook, halfpageVDS (V)ID(mA)6002010 MBH55554321 VGS = 0 V V 1 V characteristics for BF245A; typical ; Tj=25 characteristics for BF245B; typical.

4 Tj=25 , halfpageVGS (V)ID(mA)150 40 2 MGE787105handbook, halfpageVDS (V)ID(mA)15002010 MBH553105 VGS = 0 V V 1 V V 2 V characteristics for BF245B; typical ; Tj=25 characteristics for BF245C ; typical , halfpageVGS (V)ID(mA)300 100 5 MGE7882010 VDS=15V; Tj=25 Jul 306 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; BF245 Chandbook, halfpageVDS (V)ID(mA)30002010 MBH5542010 VGS = 0 V 1 V 2 V 3 V 4 characteristics for BF245C ; typical ; Tj=25 current as a function of junction temperature; typical values for , halfpage0050150Tj ( C)4ID(mA)312 MGE775100 VVGS = 0 V V 1 Drain current as a function of junction temperature; typical values for , halfpage005015015510 MGE776100Tj ( C)ID(mA)VGS = 0 V 2 V 1 VVDS= Drain current as a function of junction temperature; typical values for , halfpage050150200 MGE779100481216Tj ( C)ID(mA)VGS = 0 V 4 V 2 V1996 Jul 307 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; Input admittance; typical , halfpageMGE77810310210110210110 110102103gis( A/V)bis(mA/V)f (MHz)bisgisVDS=15V; VGS=0.

5 Tamb=25 Common source reverse admittance as a function of frequency; typical , halfpageMGE7801041031021010110 110 210102103brs( A/V)Crs(pF)f (MHz)brsCrsVDS=15V; VGS=0; Tamb=25 Common-source forward transfer admittance as a function of frequency; typical ; VGS=0; Tamb=25 , halfpage100 MGE782101021032468gfs, bfs(mA/V)f (MHz) Common-source output admittance as a function of frequency; typical ; VGS=0; Tamb=25 , halfpageMGE78310310210110110 110 210102103gos( A/V)bos(mA/V)f (MHz)bosgos1996 Jul 308 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; Input capacitance as a function of gate-source voltage; typical ; f=1 MHz; Tamb=25 , halfpage06420 2 10 MGE777 4 6 8 VGS (V)Cis(pF) Reverse transfer capacitance as a function of gate-source voltage; typical ; f=1 MHz; Tamb=25 , halfpage0 (pF) 2 4 6 8 VGS (V) Forward transfer admittance as a function of drain current; typical , halfpage860 MGE79142|yfs|(mA/V)ID (mA)02010155BF245 ABF245 BBF245 CVDS=15V; f=1kHz; Tamb=25 Gate-source cut-off voltage as a function of drain current; typical.

6 Tj=25 , halfpage01030 10 0 MGE78420 2 4 6 8BF245 AIDSS at VGS = 0 (mA)VGSoffat ID = 10 nA(V)BF245 BBF245C1996 Jul 309 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; Drain-source on-state resistance as a function of gate-source voltage; typical 0; f = 1 kHz; Tamb=25 , halfpage10310 1110102 4 2 10 MGE790 3 RDSon(k )BF245 ABF245 BBF245 CVGS (V) Noise figure as a function of frequency; typical ; VGS=0; RG=1k ; Tamb=25 C. Input tuned to minimum , halfpage03 MGE786110typ10210312F(dB)f (MHz)1996 Jul 3010 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; BF245 CPACKAGE OUTLINEUNITA REFERENCESOUTLINEVERSIONEUROPEANPROJECTI ONISSUE DATE IEC JEDEC (1) (mm are the original dimensions)Note1.

7 Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 mmscalebcDb1L1dEPlastic single-ended leaded (through hole) package; 3 leads (on-circle)SOT54 variant123L2e1ee104-06-2805-01-101996 Jul 3011 NXP SemiconductorsProduct specificationN- channel silicon field-effect transistorsBF245A; BF245B; BF245 CDATA SHEET STATUSN otes1. Please consult the most recently issued document before initiating or completing a The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.

8 The latest product status information is available on the Internet at URL DOCUMENTSTATUS(1)PRODUCT STATUS(2)DEFINITIONO bjective data sheetDevelopmentThis document contains data from the objective specification for product development. Preliminary data sheetQualificationThis document contains data from the preliminary specification. Product data sheetProductionThis document contains the product specification. DEFINITIONSP roduct specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing.

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