Search results with tag "N channel"
MMBF170 - Field Effect Transistor - N-Channel, …
www.onsemi.comN-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.
FQP30N06L 60V LOGIC N-Channel MOSFET
cdn.sparkfun.com60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy ...
PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level …
assets.nexperia.comLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide ran ge of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
BF245A; BF245B; BF245C N-channel silicon field-effect ...
www.nxp.comN-channel silicon field-effect transistors BF245A; BF245B; BF245C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm 10 mm. THERMAL CHARACTERISTICS STATIC CHARACTERISTICS
BF862 N-channel junction FET
www.nxp.comN-channel junction FET BF862 NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all
LTC4446 - High Voltage High Side / Low Side N-Channel ...
www.analog.comLTC4446 1 4446f TYPICAL APPLICATION FEATURES APPLICATIONS DESCRIPTION High Voltage High Side/ Low Side N-Channel MOSFET Driver The LTC ®4446 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a DC/DC converter
MOSFETs Two-Switch Forward Converter: Operation, FOM, …
www.vishay.comDUAL SWITCH VS. PFC CONVERTER, FOM, AND POWER LOSS ... Each MOSFET has a target loss of less than 0.5 % of the total converter loss. So, for a 400 W ATX power supply, ... N Channel Voltage Rating Divided by 10 40 = 400 V 50 = 500 V 60 = 600 V 65 = 650 V C and D = Conventional Planar
NTB5860NL - N-Channel Power MOSFET
www.onsemi.comN-Channel Power MOSFET 60 V, 220 A, 3.0 m Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
N-Channel Mosfet Transistor IRF840 - njsemi.com
njsemi.comN-Channel Mosfet Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF840 FEATURES Drain Current -ID=8.0A@ TC=25°C Drain Source Voltage-: VDSs= 500V(Min) Static Drain-Source On-Resistance) = 0.85fi(Max) DESCRITION Designed for high voltage, high speed switching power applic-ations such as switching regulators, converters ...
NTR4003N, NVR4003N MOSFET – Single, N-Channel, Small ...
www.onsemi.comN-Channel, Small Signal, SOT-23 30 V, 0.56 A Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Rating of 30 V • NVR Prefix for Automotive and Other ...
N-channel 60 V, 4.6 mΩ - Nexperia
assets.nexperia.com1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and
N-Channel 20 V (D-S) MOSFET - Vishay Intertechnology
www.vishay.comVishay Siliconix Package Information Document Number: 71196 09-Jul-01 www.vishay.com 1 SOT-23 (TO-236): 3-LEAD b 1E 1 3 2 S e e1 D A 2 A1 C Seating Plane 0.10 mm 0.004"
N-Channel 1.25-W, 2.5-V MOSFET
www.vishay.comSi2302DS Vishay Siliconix Document Number: 70628 S-53600—Rev. D, 22-May-97 www.vishay.com FaxBack 408-970-5600 2-1 N-Channel 1.25-W, 2.5-V MOSFET