30v n channel mosfet
Found 9 free book(s)
BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
www.radiotechnika.hu©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power
30V N-Channel MOSFET - Alpha and Omega Semiconductor
aosmd.comAO4406A 30V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 13A R DS(ON) (at V GS =10V) < 11.5mΩ R DS(ON) (at V GS = 4.5V) < 15.5mΩ 100% UIS Tested 100% R g Tested Symbol Drain-Source Voltage VDS 30 The AO4406A uses advanced trench technology to
30V N-Channel MOSFET
www.aosmd.comAON7534 General Description Product Summary VDS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V) < 5m Ω R DS(ON) (at V GS = 4.5V) < 8.5m Ω Application 100% UIS Tested 100% R g Tested Form Minimum Order Quantity AON7534 DFN 3x3 EP Tape & Reel 5000 30V N-Channel MOSFET
LTC1624 - High Efficiency SO-8 N-Channel Switching ...
www.analog.com1 LTC1624 FEATURES DESCRIPTION U N-Channel MOSFET Drive Implements Boost, Step-Down, SEPIC and Inverting Regulators Wide VIN Range: 3.5V to 36V Operation Wide VOUT Range: 1.19V to 30V in Step-Down Configuration ±1% 1.19V Reference Low Dropout Operation: 95% Duty Cycle 200kHz Fixed Frequency Low Standby Current Very High Efficiency Remote Output Voltage Sense
N- and P-Channel 30-V (D-S) MOSFET
www.vishay.comDocument Number: 70971 S09-2110-Rev. C, 12-Oct-09 www.vishay.com 3 Vishay Siliconix Si3552DV N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
CSD18563Q5A 60 V N-Channel NexFET™ Power MOSFET
www.ti.com0 3 6 9 12 15 18 21 24 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 18A T C = 125°C ...
N-Channel 30-V (D-S) MOSFET
www.vishay.comDocument Number: 72768 S09-0272-Rev. G, 16-Feb-09 www.vishay.com 3 Vishay Siliconix Si7636DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRHLUB770Z4 RADIATION HARDENED JANSR2N7616UB …
www.irf.comwww.irf.com 3 Pre-Irradiation IRHLUB770Z4, JANSR2N7616UB International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFET ...
www.irf.comIRF150 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case — — 0.83 RthJA Junction to Ambient — — 30 Typical socket mount