30V N-Channel MOSFET

1 AON7534 General DescriptionProduct SummaryVDS ID (at VGS=10V)30A RDS(ON) (at VGS=10V)< 5m RDS(ON) (at VGS = )< Application100% UIS Tested100% Rg TestedFormMinimum Order QuantityAON7534 DFN 3x3 EPTape & Reel500030V N-Channel MOSFETA bsolute Maximum Ratings TA=25 C unless otherwise notedOrderable Part NumberPackage Type30V Trench Power MOSFET technology Very Low RDS(on) at Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and IndustrialG DSTop View12348765 DFN 3x3 EPTop View Bottom View Pin 1 SymbolVDSVGSIDMIASEASVDS SpikeVSPIKETJ.

2 TSTGS ymbolt 10sSteady-StateSteady-StateR JC 100ns36 VMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation APDSMWTA=70 C232TA=25 CTC=25 C39TC=100 CPower Dissipation BPDATA=25 CIDSMATA=70 CID3023TC=25 CTC=100 C120 Pulsed Drain Current CContinuous DrainCurrentGmJA32 Avalanche energy L= CVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise notedAvalanche Current C16 Continuous DrainCurrent2620 UnitsJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsParameterTypMaxV 20 Gate-Source VoltageDrain-Source Voltage30 Maximum Junction-to-Ambient A C/WR JA306040.

3 April 2016 1 of 6 AON7534 SymbolMinTypMaxUnitsBVDSS30 VVDS=30V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold Qg(10V) ( ) (on) ID=250 AElectrical Characteristics (TJ=25 C unless otherwise noted)ParameterConditionsSTATIC PARAMETERSD rain-Source Breakdown VoltageID=250 A, VGS=0 VIDSSZero Gate Voltage Drain Current AGate-Body leakage currentVDS=0V, VGS= 20 VDYNAMIC PARAMETERSRDS(ON)Static Drain-Source On-ResistanceVGS=10V, ID=20Am VGS= , ID=20 AForward TransconductanceVDS=5V, ID=20 ADiode Forward VoltageIS=1A,VGS=0 VMaximum Body-Diode Continuous CurrentInput CapacitanceVGS=0V, VDS=15V, f=1 MHzOutput CapacitanceReverse Transfer CapacitanceGate resistanceVGS=0V, VDS=0V, f=1 MHzSWITCHING PARAMETERST otal Gate ChargeVGS=10V, VDS=15V, ID=20 ATotal Gate ChargeGate Source ChargeGate Drain ChargeTurn-On DelayTimeVGS=10V, VDS=15V, RL= ,R=3 Turn-On Rise TimeTurn-Off DelayTimetD(off)

4 OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOESNOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TOIMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeIF=20A, dI/dt=500A/ sRGEN=3 Turn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeIF=20A, dI/dt=500A/ sA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAt 10s and the maximum allowed junction temperature of 150 C.

5 The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C.

6 The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. : April 2 of 6 AON7534 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0204060801000123456ID(A)V GS(Volts)Figure 2: Transfer Characteristics (Note E)0246810051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs.

7 Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)051015246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=20A25 C125 C : April 3 of 6 AON7534 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS175210018024681005101520 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0200400600800100012001400 051015202530 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case CossCrssVDS=15 VID=20 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)Figure 9.

8 Maximum Forward Biased 10 s10ms1msDCRDS(ON) TJ(Max)=150 CTC=25 C100 s40(Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseSafe Operating Area (Note F)R JC= C/W : April 4 of 6 AON7534 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS01020300255075100125150 Power Dissipation (W)TCASE( C)Figure 12: Power De-rating (Note F)0102030400255075100125150 Current rating ID(A)TCASE( C)Figure 13: Current De-rating (Note F)TA=25 JANormalized Transient Thermal ResistancePulse Width (s)Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseR JA=75 C/W.

9 April 5 of 6 AON7534 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VD CDUTVddVgsVdsVgsRLRgVgsVds10%90%Resistiv e Switching Test Circuit & W aveformsttrd(on)tontd(off)tftoffId+LVdsB VUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & W aveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr : April 6 of 6