Channel 100 V
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P-Channel 8 V (D-S) MOSFET - Vishay - manufacturer of ...
www.vishay.comVishay Siliconix Si2305CDS Document Number: 64847 S10-0720-Rev. C, 29-Mar-10 www.vishay.com 1 P-Channel 8 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition † TrenchFET® Power MOSFET † 100 % Rg Tested † Compliant to RoHS Directive 2002/95/EC
Ultra-Small High-Side N-Channel MOSFET Driver
ww1.microchip.comMIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408)
N- and P-Channel 60-V (D-S) MOSFET
www.vishay.comVishay Siliconix Si4559ADY Document Number: 73624 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 1 N- and P-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free According to …
PD - 91405C IRF5210S/L - Infineon Technologies
www.irf.comIRF5210S/L HEXFET® Power MOSFET PD - 91405C l Advanced Process Technology l Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated 5/13/98 S D G Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
AO3415 Rev7 RoHS BUP019A - Alpha & Omega Semiconductor
www.aosmd.comAO3415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 3 6 9 12 15 0 0.5 1 1.5 2-I D (A)-VGS (Volts) Figure 2: Transfer Characteristics (Note E) 20 40 60 80 100 0 2 4 6 8 10
PD - 91309C IRF3710
www.irf.com8 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market.
PXI-4130 Specifications - National Instruments
www.ni.comSPECIFICATIONS PXI-4130 ±20 V, 40 W PXI Source Measure Unit These specifications apply to the PXI-4130 with APS-4100 auxiliary power supply and to the
SLPS549A –AUGUST 2015–REVISED MAY 2016 CSD19537Q3 …
www.ti.com26-May-2016 (6) (3) (3)
White Paper Samsung V-NAND technology
www.samsung.comWhite Paper 3 Discover the advantages of V-NAND compared with planar NAND The architectural changes that have been made to Samsung V-NAND flash memory in …