PD - 91309C IRF3710

1 IRF3710 HEXFET Power JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal = 100 VRDS(on) = 23m ID = 57 ASDGTO-220 ABAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFETs are well knownfor, provides the designer with an extremely efficient and reliable device foruse in a wide variety of TO-220 package is universally preferred for all commercial-industrialapplications at power dissipation levels to approximately 50 watts.

2 The lowthermal resistance and low package cost of the TO-220 contribute to its wideacceptance throughout the industry. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche RatedDescriptionAbsolute Maximum @ TC = 25 CContinuous Drain Current, VGS @ 10V57ID @ TC = 100 CContinuous Drain Current, VGS @ 10V40 AIDMP ulsed Drain Current 230PD @TC = 25 CPower Dissipation200 WLinear Derating CVGSGate-to-Source Voltage 20 VIARA valanche Current 28 AEARR epetitive Avalanche Energy 20mJdv/dtPeak Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature.

3 For 10 seconds300 ( from case ) CMounting torque, 6-32 or M3 srew10 lbf in ( m)PD - 91309Cs Max. Units ConditionsISContinuous Source CurrentMOSFET symbol(Body Diode) showing theISMP ulsed Source Currentintegral reverse(Body Diode) p-n junction Forward Voltage = 25 C, IS = 28A, VGS = 0V trrReverse Recovery Time 140220nsTJ = 25 C, IF = 28 AQrrReverse Recovery Charge 670 1010nCdi/dt = 100A/ s tonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Source-Drain Ratings and Characteristics57230e 2 Starting TJ = 25 C, L = RG = 25 , IAS = 28A, VGS=10V (See Figure 12) 2 Repetitive rating.

4 Pulse width limited by max. junction temperature. (See fig. 11)x X s h2 228AD2di/d 2 2380A/ s, VDD2 2V(BR)DSS, TJ 175 C 2 Pulse width 400 s; duty cycle 2%. 2 This is a typical value at device destruction and represents operation outside rated limits. 2 This is a calculated value limited to TJ = 175 C .ParameterMin. Typ. Max. Units ConditionsV(BR)DSSD rain-to-Source Breakdown Voltage100 VVGS = 0V, ID = 250 A V(BR)DSS/ TJBreakdown Voltage Temp. Coefficient V/ CReference to 25 C, ID = 1mARDS(on)Static Drain-to-Source On-Resistance 23m VGS = 10V, ID =28A2 VGS(th)Gate Threshold = VGS, ID = 250 AgfsForward Transconductance32 SVDS = 25V, ID = 28A 25 AVDS = 100V, VGS = 0V 250 VDS = 80V, VGS = 0V, TJ = 150 CGate-to-Source Forward Leakage 100 VGS = 20 VGate-to-Source Reverse Leakage -100nAVGS = -20 VQgTotal Gate Charge 130ID = 28 AQgsGate-to-Source Charge 26nCVDS = 80 VQgdGate-to-Drain ("Miller") Charge 43 VGS = 10V, See Fig.

5 6 and 13td(on)Turn-On Delay Time 12 VDD = 50 VtrRise Time 58 ID = 28 Atd(off)Turn-Off Delay Time 45 RG = tfFall Time 47 VGS = 10V, See Fig. 10 Between lead, 6mm ( )from packageand center of die contactCissInput Capacitance 3130 VGS = 0 VCossOutput Capacitance 410 VDS = 25 VCrssReverse Transfer Capacitance 72 pF = , See Fig. 5 EASS ingle Pulse Avalanche Energy 1060 280 mJIAS = 28A, L = Characteristics @ TJ = 25 C (unless otherwise specified)LDInternal Drain InductanceLSInternal Source Inductance Leakage Currents 4.

6 Normalized On-ResistanceVs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 3. Typical Transfer , Drain-to-Source Voltage (V) , Drain-to-Source Current (A) s PULSE WIDTHTj = 25 C VGSTOP 16V 10V , Drain-to-Source Voltage (V) , Drain-to-Source Current (A) s PULSE WIDTHTj = 175 C VGSTOP 16V 10V , Gate-to-Source Voltage (V) , Drain-to-Source Current ( )

7 TJ = 25 CTJ = 175 CVDS = 15V20 s PULSE , Junction Temperature( C)R , Drain-to-Source On Resistance(Normalized)JDS(on) V=I=GSD10V57 ASH s 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge VoltageFig 5. Typical Capacitance VoltageFig 7. Typical Source-Drain DiodeForward Voltage110100 VDS, Drain-to-Source Voltage (V)10100100010000100000C, Capacitance(pF)CossCrssCissVGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd Coss = Cds + , Source-toDrain Voltage (V) , Reverse Drain Current (A)TJ = 25 CTJ = 175 CVGS = 0V1101001000 VDS , Drain-toSource Voltage (V) , Drain-to-Source Current (A)Tc = 25 CTj = 175 CSingle Pulse1msec10msecOPERATION IN THIS AREA LIMITED BY RDS(on)100 sec0 20406080100 QG Total Gate Charge (nC) , Gate-to-Source Voltage (V)

8 VDS= 80 VVDS= 50 VVDS= 20 VID= 28As 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig 9. Maximum Drain Current TemperatureVDS90%10%VGStd(on)trtd(off)tf h 2 2 1 h 2p 2 % h q qhF F F q +- hhp 2IH F22 2 2 2g p 2IH F22 2 2 2550751001251501750102030405060T , Case Temperature( C)I , Drain Current (A) 1 Notes:1. Duty factor D =t / t2. Peak T=Px Z+ T12 JDMthJCCPttDM12t , Rectangular Pulse Duration (sec)Thermal Response(Z ) = PULSE(THERMAL RESPONSE)s F50K .2 F12 VCurrent RegulatorSame Type as Sampling Resistors+- q p 2IQ F22q 2g 2 2g p 2IQ F22f 2q 2g 2 p 2IP F22 2s 2 p 2IP F22 2s 2 2g tpV(BR)DSSIASp 2IP F22w 2e 2i " F2h 2g +-VDDDRIVERA15V20 VVGS2550751001251501750110220330440550 Starting T , Junction Temperature( C)E , Single Pulse Avalanche Energy (mJ)JAS IDTOPBOTTOM11A 20A 28A s 2h 2 2 G 2 2g Recoverydv/dtRipple 5%Body Diode Forward DropRe-AppliedVoltageReverseRecoveryCurr entBody Diode ForwardCurrentVGS=10 VVDDISDD river Gate VDSW aveformInductor CurentD = P.

9 W .Period+-+++--- q hh G 2 2 2 q s h2 2 2h 2p 24h4 hF F F2E2h 2 2 ! hF F Bg 2v 2g ! ! 2v $2 2s 22 q 2 22 v $2v ( ) 2s 222222g 2 !* + B22 ! 2 2 *2hF F 2* 2 Eg, q 2222 2222 BBB2 q 2a2 SFH 2* 2v ) 2v 2 2Q 2h 2h ! 2222222222 2 BBBp 2 IRF2 For N-channel2 HEXFET power MOSFETss and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] Standards can be found on IR s Web WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at for sales contact yEPPHef2 2w 2s (;$03/( ,1 7+( $66(0%/< /,1( & 7+,6 ,6 $1 ,5) /27 &2'( $66(0%/(' 21 :: 3$57 180%(5$66(0%/</27 &2'('$7( &2'(<($5 /,1( &:((.)))))))))))))))

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