100V N-Channel MOSFET

1 AOD2916. 100V N-Channel MOSFET . General Description Product Summary The AOD2916 uses trench MOSFET technology that is VDS 100V. uniquely optimized to provide the most efficient high ID (at VGS=10V) 25A. frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 34m . switching power losses are minimized due to an RDS(ON) (at VGS= ) < . extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested TO252. DPAK. D. Top View Bottom View D. D. G. S G. S. G S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 100 V. Gate-Source Voltage VGS 20 V. Continuous Drain TC=25 C 25. ID. Current TC=100 C 18 A. Pulsed Drain Current C IDM 50. Continuous Drain TA=25 C IDSM A. Current TA=70 C C. Avalanche Current IAS 8 A.

2 Avalanche energy L= C EAS 3 mJ. TC=25 C 50. PD W. Power Dissipation B TC=100 C 25. TA=25 C A. PDSM W. Power Dissipation TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 175 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 15 20 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 41 50 C/W. Maximum Junction-to-Case Steady-State R JC 3 C/W. Rev 0: Sep. 2012 Page 1 of 6. AOD2916. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 100 V. VDS=100V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A V. ID(ON) On state drain current VGS=10V, VDS=5V 50 A. VGS=10V, ID=10A 28 34. m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C 51 62.

3 VGS= , ID=3A 35 m . gFS Forward Transconductance VDS=5V, ID=10A 28 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current 26 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 870 pF. Coss Output Capacitance VGS=0V, VDS=50V, f=1 MHz 68 pF. Crss Reverse Transfer Capacitance pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz 7 . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 20 nC. Qg( ) Total Gate Charge 10 nC. VGS=10V, VDS=50V, ID=10A. Qgs Gate Source Charge nC. Qgd Gate Drain Charge 2 nC. tD(on) Turn-On DelayTime ns tr Turn-On Rise Time VGS=10V, VDS=50V, RL=5 , ns tD(off) Turn-Off DelayTime RGEN=3 23 ns tf Turn-Off Fall Time ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/ s 20 ns Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/ s 88 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150 C.

4 The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 C. D. The R JA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C. The SOA curve provides a single pulse rating.

5 G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Sep. 2012 Page 2 of 6. AOD2916. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 50 40. 10V 6V VDS=5V. 40 30. 30. 4V. ID (A). ID(A). 20 125 C. 20. 10. 10. VGS=3V 25 C. 0 0. 0 1 2 3 4 5 1 2 3 4 5. VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 40 Normalized On-Resistance VGS=10V. 35 ID=10A. VGS= 2. ). RDS(ON) (m . 17. 30. 5. 2. 25 VGS.

6 10. = VGS=10V ID=3A. 1. 20 0 5 10 15 20 0 25 50 75 100 125 150 175 200. ID (A). Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C) 0. Voltage (Note E) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E). 80 +02. ID=10A. 70 +01. 40. +00. 60. ). RDS(ON) (m . 125 C 125 C. IS (A). 50. 25 C. 40. 25 C. 30. 20 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 0: Sep. 2012 Page 3 of 6. AOD2916. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10 1000. VDS=50V Ciss ID=10A. 8 800. Capacitance (pF). VGS (Volts). 6 600. Coss 4 400. 2 200. Crss 0 0. 0 3 6 9 12 15 0 20 40 60 80 100. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 200. TJ(Max)=175 C. 10 s TC=25 C. 10 s 160. RDS(ON). limited 100 s ID (Amps). Power (W). 120 17. 1ms 5. 10ms DC 80 2. TJ(Max)=175 C 10. TC=25 C 40.

7 0. 1 10 100 1000. 1 10 100. VDS (Volts) 0. Pulse Width (s). Figure 9: Maximum Forward Biased Safe 18. Figure 10: Single Pulse Power Rating Junction-to- Operating Area (Note F) Case (Note F). 10. D=Ton/T In descending order TJ,PK=TC+ JC D= , , , , , , single pulse Z JC Normalized Transient 40. Thermal Resistance R JC=3 C/W. 1. PD. Single Pulse Ton T. 1E-05 1 10 100. Pulse Width (s). Figure 11: Normalized Maximum Transient Thermal Impedance (Note F). Rev 0: Sep. 2012 Page 4 of 6. AOD2916. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 60 30. 50. Power Dissipation (W). Current rating ID(A). 40 20. 30. 20 10. 10. 0 0. 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175. TCASE ( C) TCASE ( C). Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F). 10000. TA=25 C. 1000. Power (W). 17. 100 5. 2. 10. 10. 1. 1E-05 10 1000. 0. Pulse Width (s) 18. Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H).

8 10. D=Ton/T In descending order TJ,PK=TA+ JA D= , , , , , , single pulse Z JA Normalized Transient Thermal Resistance 1 R JA=50 C/W 40. PD. Single Pulse Ton T. 1E-05 1 10 100 1000. Pulse Width (s). Figure 15: Normalized Maximum Transient Thermal Impedance (Note H). Rev 0: Sep. 2012 Page 5 of 6. AOD2916. Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds Vds 90%. DUT. + Vdd Vgs VDC. Rg - 10%. Vgs Vgs t d(on) tr t d(off) tf t on toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2. Vds E AR = 1/2 LIAR BVDSS. Id Vds Vgs + Vdd I AR. Vgs VDC. Rg - Id DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L Isd IF. Isd dI/dt + Vdd I RM. Vgs VDC. Vdd Ig - Vds Rev 0: Sep. 2012 Page 6 of 6.