30V N-Channel MOSFET
General Description Product Summary VDS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V) < 8m Ω R DS(ON) (at V GS =4.5V) < 10.5mΩ 100% UIS Tested 100% R g Tested Symbol VDS VGS The AON6414A uses advanced trench technology to provide excellent R DS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general ...
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