a Operational Amplifier Low-Noise, Precision OP27

1 AOP27 Information furnished by Analog Devices is believed to be accurate andreliable. However, no responsibility is assumed by Analog Devices for itsuse, nor for any infringements of patents or other rights of third parties thatmay result from its use. No license is granted by implication or otherwiseunder any patent or patent rights of Analog Devices. Trademarks andregistered trademarks are the property of their respective Technology Way, Box 9106, Norwood, MA 02062-9106, : 781/329-4700 : 781/326-8703 2003 Analog Devices, Inc. All rights CLow-Noise, PrecisionOperational AmplifierPIN CONNECTIONSTO-99(J-Suffix)V+OUTNC4V (CASE)BALBAL 1 IN 2+IN 3OP27NC = NO CONNECTFEATURESLow Noise: 80 nV p-p ( Hz to 10 Hz), 3 nV/ HzLow Drift: V/ CHigh Speed: V/ s Slew Rate, 8 MHz GainBandwidthLow VOS: 10 VExcellent CMRR: 126 dB at VCM of 11 VHigh Open-Loop Gain: MillionFits 725, OP07, 5534A SocketsAvailable in Die FormGENERAL DESCRIPTIONThe OP27 Precision Operational Amplifier combines the lowoffset and drift of the OP07 with both high speed and low down to 25 mV and maximum drift of mV/ C, makesthe OP27 ideal for Precision instrumentation low noise, en = nV/ Hz, at 10 Hz, a low 1/fnoise corner frequency of Hz, and high gain ( million),allow accurate high-gain amplification of low-level signals.

2 Again-bandwidth product of 8 MHz and a V/msec slew rateprovides excellent dynamic accuracy in high-speed, data-acquisition low input bias current of 10 nA is achieved by use of abias-current-cancellation circuit. Over the military temperaturerange, this circuit typically holds IB and IOS to 20 nA and 15 nA, output stage has good load driving capability. A guaranteedswing of 10 V into 600 W and low output distortion make theOP27 an excellent choice for professional audio applications.(Continued on page 7)SIMPLIFIED SCHEMATICV V+Q2BR2*Q3Q2AQ1AQ1BR4R1*R318 VOS AND R2 ARE PERMANENTLYADJUSTED AT WAFER TEST FORMINIMUM OFFSET VOLTAGE.*NONINVERTINGINPUT (+)INVERTINGINPUT ( )Q6Q21C2R23R24Q23Q24Q22R5Q11 Q12Q27Q28C1R9R12C3C4Q26Q20Q19Q46Q45 OUTPUT8-Pin Hermetic DIP(Z-Suffix)Epoxy Mini-DIP(P-Suffix)8-Pin SO(S-Suffix)87651234NC = NO CONNECTVOS TRIM IN+INVOS TRIMV+OUTNCV OP27 REV. C 2 OP27 ELECTRICAL CHARACTERISTICS OP27A/E OP27F OP27C/GParameterSymbolConditionsMinTypMa xMinTypMaxMinTypMaxUnitINPUT OFFSETVOLTAGE1 VOS1025206030100mVLONG-TERM VOSSTABILITY2, 3 OFFSETCURRENTIOS7359501275 nAINPUT BIASCURRENTIB 10 40 12 55 15 80nAINPUT NOISEVOLTAGE3, 4en Hz to 10 p-pINPUT NOISEenfO = 10 HzVoltage Density3fO = 30 HzfO = 1000 HzINPUT NOISEinfO = 10 HzCurrent Density3, 5fO = 30 HzfO = 1000 VOLTAGERANGEIVR RATIO CMRRVCM = 11 V114126106123100120dBPOWER SUPPLYPSRRVS = 4 VREJECTION RATIOto 18 V110110220mV/VLARGE-SIGNALAVORL 2 kW,VOLTAGE GAINVO = 10 V10001800100018007001500V/mVRL 600 W,VO = 10 V800150080015006001500V/mVOUTPUTVOLTAGE SWINGVORL 2 kW 600 W RATE7 SRRL 2 = 0, IO = 07070 70 WPOWERCONSUMPTIONPdVO9014090140100170mWO FFSETADJUSTMENTRANGERP = 10 kW offset voltage measurements are performed ~ seconds after application of power.

3 A/E grades guaranteed fully warmed input offset voltage stability refers to the average trend line of VOS versus. Time over extended periods after the first 30 days of operation. Excluding theinitial hour of operation, changes in VOS during the first 30 days are typically mV. Refer to typical performance test circuit and frequency response curve for Hz to 10 Hz test circuit for current noise by input bias by design.(@ VS = 15 V, TA = 25 C, unless otherwise noted.) SPECIFICATIONSREV. C 3 OP27(@ VS = 15 V, 55 C TA 125 C, unless otherwise noted.)ELECTRICAL CHARACTERISTICS OP27A OP27 CParameterSymbolConditionsMinTypMaxMinTy pMaxUnitINPUT OFFSETVOLTAGE1 VOS306070300mVAVERAGE INPUTOFFSET CINPUT OFFSETCURRENTIOS155030135nAINPUT BIASCURRENTIB 20 60 35 150nAINPUT VOLTAGERANGEIVR RATIO CMRRVCM = 10 V10812294118dBPOWER SUPPLYREJECTION RATIO PSRRVS = V to 18 V216451mV/VLARGE-SIGNALVOLTAGE GAINAVORL 2 kW, VO = 10 V 6001200300800V/mVOUTPUTVOLTAGE SWINGVORL 2 kW offset voltage measurements are performed by automated test equipment approximately seconds after application of power.

4 A/E grades guaranteed fullywarmed TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kW to 20 kW. TCVOS is 100% tested for A/E grades, sample tested forC/F/G by C 4 OP27 ELECTRICAL CHARACTERISTICS(@ VS = 15 V, 25 C TA 85 C for OP27J, OP27Z, 0 C TA 70 C for OP27EP,OP27FP, and 40 C TA 85 C for OP27GP, OP27GS, unless otherwise noted.) OP27E OP27F OP27 GParameterSymbolConditionsMinTypMaxMinTy pMaxMinTypMaxUnitINPUT ONSETVOLTAGEVOS20504014055220mVAVERAGE INPUTOFFSET CINPUT OFFSETCURRENTIOS1050148520135nAINPUT BIASCURRENTIB 14 60 18 95 25 150nAINPUT VOLTAGERANGEIVR RATIO CMRRVCM = 10 V11012410212196118dBPOWER SUPPLYREJECTION RATIO PSRRVS = V215216232mV/Vto 18 VLARGE-SIGNALVOLTAGE GAINAVORL 2 kW,VO = 10 V750150070013004501000V/mVOUTPUTVOLTAGE SWINGVORL 2 kW TCVOS performance is within the specifications unnulled or when nulled with RP = 8 kW to 20 kW.

5 TCVOS is 100% tested for A/E grades, sample tested forC/F/G by C 5 OP27OP27 NOP27 GOP27 GRParameterSymbolConditionsLimitLimitLim itUnitINPUT OFFSET VOLTAGE*VOS3560100mV MaxINPUT OFFSET CURRENTIOS355075nA MaxINPUT BIAS CURRENTIB 40 55 80nA MaxINPUT VOLTAGE RANGEIVR 11 11 11V MinCOMMON-MODE REJECTIONRATIOCMRRVCM = IVR114106100dB MinPOWER SUPPLYPSRRVS = 4 V to 18 V101020mV/V MaxLARGE-SIGNAL VOLTAGEGAINAVORL 2 kW, VO = 10 V10001000700V/mV MinAVORL 600 W, VO = 10 V800800600V/mV MinOUTPUT VOLTAGE SWINGVORL 2 kW + MinVORL2600n MinPOWER CONSUMPTIONPdVO = 0140140170mW MaxNOTE*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteedfor standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and TEST LIMITS(@ VS = 15 V, TA = 25 C unless otherwise noted.)DIE CHARACTERISTICS12346871427U19901.

6 NULL2. ( ) INPUT3. (+) INPUT4. V 6. OUTPUT7. V+8. NULLREV. C 6 OP27OP27 NOP27 GOP27 GRParameterSymbolConditionsTypicalTypica lTypicalUnitAVERAGE INPUT OFFSETVOLTAGE DRIFT*TCVOS orNulled or CTCVOSnRP = 8 kW to 20 kWAVERAGE INPUT OFFSETCURRENT DRIFTTCIOS80130180pA/ CAVERAGE INPUT BIASCURRENT DRIFTTCIB100160200pA/ CINPUT NOISE VOLTAGEDENSITYenfO = 10 HzenfO = 30 HzenfO = 1000 HzINPUT NOISE CURRENTDENSITYinfO = 10 HzinfO = 30 HzinfO = 1000 HzINPUT NOISE Hz to 10 p-pSLEW RATESRRL 2 BANDWIDTHPRODUCTGBW888 MHzNOTE*Input offset voltage measurements are performed by automated test equipment approximately seconds after application of ELECTRICAL CHARACTERISTICS(@ VS = 15 V, TA = 25 C unless otherwise noted.)REV. COP27 7 Package Type JA3 JCUnitTO 99 (J)15018 C/W8-Lead Hermetic DlP (Z)14816 C/W8-Lead Plastic DIP (P)10343 C/W20-Contact LCC (RC)9838 C/W8-Lead SO (S)15843 C/WNOTES1 For supply voltages less than 22 V, the absolute maximum input voltage isequal to the supply OP27 s inputs are protected by back-to-back diodes.

7 Current limitingresistors are not used in order to achieve low noise. If differential input voltageexceeds V, the input current should be limited to 25 JA is specified for worst-case mounting conditions, , JA is specified fordevice in socket for TO, CERDIP, and P-DIP packages; JA is specified fordevice soldered to printed circuit board for SO Maximum Ratings apply to both DICE and packaged parts, unlessotherwise MAXIMUM RATINGS4 Supply Voltage .. 22 VInput Voltage1 .. 22 VOutput Short-Circuit Duration .. IndefiniteDifferential Input Voltage2 .. VDifferential Input Current2 .. 25 mAStorage Temperature Range .. 65 C to +150 COperating Temperature Range OP27A, OP27C (J, Z) .. 55 C to +125 C OP27E, OP27F (J, Z) .. 25 C to +85 C OP27E, OP27F (P) .. 0 C to 70 C OP27G (P, S, J, Z) .. 40 C to +85 CLead Temperature Range (Soldering, 60 sec) .. 300 CJunction Temperature .. 65 C to +150 CORDERING INFORMATION1 PackageTA = 25 COperatingVOS MaxCERDIPP lasticTemperature(mV)TO-998-Lead8-LeadRa nge25OP27AJ2, 3OP27AZ2 MIL25OP27EJ2, 3OP27 EZOP27 EPIND/COM60OP27FP3 IND/COM100OP27CZ3 MIL100OP27 GJOP27 GZOP27 GPXIND100OP27GS4 XINDNOTES1 Burn-in is available on commercial and industrial temperature range parts in CERDIP, plasticDIP, and TO-can devices processed in total compliance to MIL-STD-883, add /883 after part factory for 883 data for new design; obsolete April availability and burn-in information on SO and PLCC packages, contact your localsales (electrostatic discharge) sensitive device.

8 Electrostatic charges as high as 4000 V readilyaccumulate on the human body and test equipment and can discharge without detection. Althoughthe OP27 features proprietary ESD protection circuitry, permanent damage may occur on devicessubjected to high-energy electrostatic discharges. Therefore, proper ESD precautions arerecommended to avoid performance degradation or loss of !ESD SENSITIVE DEVICE(Continued from page 1)PSRR and CMRR exceed 120 dB. These characteristics, coupledwith long-term drift of mV/month, allow the circuit designerto achieve performance levels previously attained only by dis-crete , high-volume production of OP27 is achieved byusing an on-chip Zener zap-trimming network. This reliableand stable offset trimming scheme has proved its effectivenessover many years of production OP27 provides excellent performance in low-noise, high-accuracy amplification of low-level signals. Applications includestable integrators, Precision summing amplifiers, Precision voltage-threshold detectors, comparators, and professional audio circuitssuch as tape-head and microphone OP27 is a direct replacement for 725, OP06, OP07, andOP45 amplifiers; 741 types may be directly replaced by remov-ing the 741 s nulling COP27 8 FREQUENCY HzGAIN TIME OF 10sec FURTHERLIMITS LOW FREQUENCY(< ) GAINTPC 1.

9 Hz to 10 Hzp-p Noise TesterFrequency ResponseBANDWIDTH HzRMS VOLTAGE NOISE = 25 CVS = 15 VTPC 4. Input Wideband VoltageNoise vs. Bandwidth ( Hz toFrequency Indicated)TOTAL SUPPLY VOLTAGE (V+ V ) VVOLTAG E NOISE nV/ Hz54101040203032TA = 25 CAT 10 HzAT 1kHzTPC 7. Voltage Noise Density Voltage Typical Performance CharacteristicsFREQUENCY Hz101TA = 25 CVS = 15V987654321101001kVOLTAG E NOISE nV/ HzI/F CORNER = 2. Voltage Noise Density SOURCE RESISTANCE 100110k1001kTOTAL NOISE nV/ Hz10TA = 25 CVS = 15VR2R1RS 2R1AT 1kHzAT 10 HzRESISTOR NOISE ONLYTPC 5. Total Noise vs. SourcedResistanceFREQUENCY HzCURRENT NOISE pA/ CORNER = 140 HzTPC 8. Current Noise Density Hz10011101001kVOLTAGE NOISE nV/ Hz10 LOW NOISEAUDIO OP AMPINSTRUMENTATIONRANGE TO DCAUDIO RANGETO 20kHzI/F CORNER741OP27I/F CORNERI/F CORNER = 3. A Comparison of Op AmpVoltage Noise Spectra TEMPERATURE CVOLTAG E NOISE nV/ Hz5 50 2502550751001254321AT 10 HzAT 1kHzVS = 15 VTPC 6.

10 Voltage Noise Density SUPPLY VOLTAGE VSUPPLY CURRENT = +125 = +25 CTA = 55 CTPC 9. Supply Current vs. SupplyVoltageREV. C 9 OP27 TEMPERATURE COFFSET VOLTAGE V60 7540200 20 40 60 50 25 025 50 75 100 125 150 1755010 30 7030 10 50 TRIMMING WITH10k POT DOESNOT CHANGETCVOSOP27 COP27 AOP27 AOP27 AOP27 CTPC 10. Offset Voltage Drift ofFive Representative Units SecOPEN-LOOP GAIN dB30 205002040608010025201510TA =25 CTA = 70 CDEVICE IMMERSEDIN 70 C OIL BATHVS = 15 VTHERMALSHOCKRESPONSEBANDTPC 13. Offset Voltage Change Dueto Thermal ShockFREQUENCY HzVOLTAG E GAIN dB13011109070503010 10101001k 10k 100k 1M 10M 100 MTPC 16. Open-Loop Gain TIME MonthsCHANGE IN OFFSET VOLTAGE V602 2 640 2 6123456740 462 4 TPC 11. Long-Term Offset VoltageDrift of Six Representative UnitsTEMPERATURE CINPUT BIAS CURRENT nA 5040200 250255075 100 125 150503010VS = 15 VOP27 AOP27 CTPC 14. Input Bias Current CSLEW RATE V/ s 50602 250255075100 1254VS = 15 VSLEW50703 PHASE MARGIN Degrees109876 GAIN BANDWIDTH PRODUCT MHz GBW 75 MTPC 17.