COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

1 DMC3400 SDW Document number: DS37690 Rev. 1 - 2 1 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(ON) max ID max TA = +25 C Q1 30 @ VGS = 10V @ VGS = Q2 -30 @ VGS = -10V @ VGS = Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Motor Control Power Management Functions DC-DC Converters Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe.

2 Solderable per MIL-STD-202, Method 208 Weight: grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC3400 SDW-7 SOT363 3000/Tape & Reel DMC3400 SDW-13 SOT363 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Marking Information Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 Code B C D E F G H Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT363 Top View CSI = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) ESD PROTECTED CSI YM Top View Pin out S2D2D1S1G2G1Q2 P-CHANNEAL Q1 N-CHANNEAL D2S2G2 GateProtection DiodeD1S1G1 GateProtection Diode DMC3400 SDW Document number: DS37690 Rev.

3 1 - 2 2 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value_Q1 Value_Q2 Units Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS 20 20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25 C TA = +70 C ID A Maximum Continuous Body Diode Forward Current (Note 6) IS A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 4 -3 A Thermal Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient (Note 5) Steady State R JA 406 C/W Total Power Dissipation (Note 6) PD W Thermal Resistance, Junction to Ambient (Note 6) Steady State R JA 319 C/W Thermal Resistance, Junction to Case R JC 126 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics N Channel Q1 (@TA = +25 C, unless otherwise specified.)

4 Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250 A Zero Gate Voltage Drain Current IDSS - - 1 A VDS = 24V, VGS = 0V Gate-Source Leakage IGSS - - 10 A VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) - V VDS = VGS, ID = 250 A Static Drain-Source On-Resistance RDS(ON) - VGS = 10V, ID = - VGS = , ID = Diode Forward Voltage VSD - V VGS = 0V, IS = DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 55 - pF VDS = 15V, VGS = 0V, f = Output Capacitance Coss - - pF Reverse Transfer Capacitance Crss - - pF Gate Resistance Rg - 92 - VDS = VGS = 0V, f = Total Gate Charge (VGS = ) Qg - - nC VDS = 10V, ID = 250mA Total Gate Charge (VGS = 10V) Qg - - nC Gate-Source Charge Qgs - - nC Gate-Drain Charge Qgd - - nC Turn-On Delay Time tD(ON) - - ns VGS = 10V, VDS = 30V, ID = 100mA, RG = 1 Turn-On Rise Time tR - - ns Turn-Off Delay Time tD(OFF) - - ns Turn-Off Fall Time tF - - ns DMC3400 SDW Document number: DS37690 Rev.

5 1 - 2 3 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Electrical Characteristics P Channel Q2 (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 - - V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS - - -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS - - 10 A VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -1 - V VDS = VGS, ID = -250 A Static Drain-Source On-Resistance RDS(ON) - VGS = -10V, ID = - VGS = , ID = Diode Forward Voltage VSD - V VGS = 0V, IS = DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 54 - pF VDS = -15V, VGS = 0V, f = Output Capacitance Coss - 10 - pF Reverse Transfer Capacitance Crss - - pF Gate Resistance Rg - 240 - VDS = VGS = 0V, f = Total Gate Charge (VGS = ) Qg - - nC VDS = -10V, ID = Total Gate Charge (VGS = -10V)

6 Qg - - nC Gate-Source Charge Qgs - - nC Gate-Drain Charge Qgd - - nC Turn-On Delay Time tD(ON) - - ns VGS = -10V, VDD = -15V, ID = , RG = 1 Turn-On Rise Time tR - - ns Turn-Off Delay Time tD(OFF) - 35 - ns Turn-Off Fall Time tF - 19 - ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMC3400 SDW Document number: DS37690 Rev. 1 - 2 4 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Typical Characteristics - N-CHANNEL , DRAIN CURRENT(A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 1. Typical Output CharacteristicVGS= , DRAIN CURRENT(A)VGS,GATE-SOURCE VOLTAGE(V)Figure2.

7 Typical Transfer CharacteristicVDS=5 VTA=150 CTA=125 CTA=85 CTA=-55 CTA=25 (ON), DRAIN-SOURCE ON-RESISTANCE( )ID,DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS= (ON), DRAIN-SOURCE ON-RESISTANCE( )VGS, GATE-SOURCE VOLTAGE(V) Figure 4. Typical Transfer Characteristic ID=590mAID= (ON), DRAIN-SOURCE ON-RESISTANCE( )ID, DRAIN CURRENT (A)Figure 5. Typical On-Resistance vs. Drain Current and TemperatureVGS= CTA=25 CTA=85 CTA=125 CTA=150 (ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)TJ, JUNCTION TEMPERATURE( C)Figure 6. On-Resistance Variation with TemperatureVGS= , ID=200mAVGS=10V, ID=590mA DMC3400 SDW Document number: DS37690 Rev. 1 - 2 5 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW (ON), DRAIN-SOURCE ON-ESISTANCE( )TJ, JUNCTION TEMPERATURE ( C)Figure 7. On-Resistance Variation with TemperatureVGS= , ID=200mAVGS=10V, ID= (TH), GATE THESHOLD VOLTAGE(V)TJ, JUNCTION TEMPERATURE( C)Figure 8.

8 Gate Theshold Variation vs. Junction TemperatureID=250 AID= , SOURCE CURRENT(A)VSD, SOURCE-DRAIN VOLTAGE (V)Figure 9. Diode Forward Voltage vs. CurrentTA=-55 CTA=25 CTA=85 CTA=125 CTA=150 CVGS=0V1 10 100 051015202530CT, JUNCTION CAPACITANCE(pF)VDS, DRAIN-SOURCE VOLTAGE(V)Figure 10. Typical Junction Capacitancef= (V)Qg (nC)Figure 11. Gate ChargeVDS=10V, ID= , DRAIN CURRENT(A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 12. SOA, Safe Operation AreaTJ(Max)=150 CTA=25 CVGS=10 VSingle PulseDUT on 1*MRP BoardRDS(ON)LimitedDCPW=10s PW=1s PW=100ms PW=10ms PW=1ms PW=100 s DMC3400 SDW Document number: DS37690 Rev. 1 - 2 6 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Typical Characteristics - P-CHANNEL 012345ID, DRAIN CURRENT(A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 13. Typical Output CharacteristicVGS= ,DRAIN CURRENT(A)VGS, GATE-SOURCE VOLTAGE(V)Figure 14.

9 Typical Transfer CharacteristicVDS= -5 VTA=-55 CTA=25 CTA=85 CTA=125 CTA=150 (ON), DRAIN-SOURCE ON-RESISTANCE( )ID, DRAIN-SOURCE CURRENT (A) Figure 15. Typical On-Resistance vs. Drain Current and Gate Voltage VGS= (ON), DRAIN-SOURCE ON-RESISTANCE( )VGS, GATE-SOURCE VOLTAGE(V) Figure 16. Typical Transfer Characteristic ID=-420mAID= (ON), DRAIN-SOURCE ON-RESISTANCE( )ID, DRAIN CURRENT (A)Figure 17. Typical On-Resistance vs. Drain Current and TemperatureVGS= CTA=25 CTA=85 CTA=125 CTA=150 (ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)TJ, JUNCTION TEMPERATURE ( C)Figure 18. On-Resistance Variation with TemperatureVGS=-10V, ID=-420mAVGS= , ID=-200mA DMC3400 SDW Document number: DS37690 Rev. 1 - 2 7 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW (ON), DRAIN-SOURCE ON-ESISTANCE( )TJ, JUNCTION TEMPERATURE ( C)Figure 19. On-Resistance Variation with TemperatureVGS=-10V, ID=-420mAVGS= , ID= (TH), GATE THESHOLD VOLTAGE(V)TJ, JUNCTION TEMPERATURE( C)Figure 20.

10 Gate Theshold Variation vs. Junction TemperatureID=-250 AID= , SOURCE CURRENT(A)VSD, SOURCE-DRAIN VOLTAGE(V)Figure 21. Diode Forward Voltage vs. CurrentTA=-55 CTA=25 CTA=85 CTA=125 CTA=150 CVGS=0V1 10 100 051015202530CT, JUNCTION CAPACITANCE(pF)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 22. Typical Junction Capacitancef= (V)Qg (nC)Figure 23. Gate ChargeVDS=-10V, ID= , DRAIN CURRENT (A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 24. SOA, Safe Operation AreaTJ(Max)=150 CTA=25 CVGS=10 VSingle PulseDUT on 1*MRP BoardRDS(ON)LimitedDCPW=10s PW=1s PW=100ms PW=10ms PW=1ms PW=100 s DMC3400 SDW Document number: DS37690 Rev. 1 - 2 8 of 9 February 2015 Diodes Incorporated NEW PRODUCT NEW PRODUCT DMC3400 SDW Package Outline Dimensions Please see AP02002 at the for latest version. Suggested Pad Layout Please see AP02001 at the for the latest version. (t), TRANSIENT THERMAL RESISTANCEt1, PULSE DURATION TIME(sec)Figure 25.