DUAL P-CHANNEL 30V - st.com

1 STS4 DPF30L. dual P-CHANNEL 30V - - 4A SO-8. STripFET POWER MOSFET. PRELIMINARY DATA. TYPE VDSS RDS(on) ID. STS4 DPF30L 30 V < 4A. TYPICAL RDS(on) = . STANDARD OUTLINE FOR EASY. AUTOMATED SURFACE MOUNT ASSEMBLY. LOW THRESHOLD DRIVE. DESCRIPTION. This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size " SO-8. strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility.

2 INTERNAL SCHEMATIC DIAGRAM. APPLICATIONS. BATTERY MANAGEMENT IN NOMADIC. EQUIPMENT. POWER MANAGEMENT IN CELLULAR. PHONES. DC-DC CONVERTER. ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V. VDGR Drain-gate Voltage (RGS = 20 k ) 30 V. VGS Gate- source Voltage 16 V. Drain Current (continuous) at TC = 25 C Single Operation 4 A. ID. Drain Current (continuous) at TC = 100 C Single Operation A. IDM( ) Drain Current (pulsed) 16 A. Total Dissipation at TC = 25 C dual Operation W. Ptot Total Dissipation at TC = 25 C Single Operation W.

3 ( ) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed April 2002 1/6. This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STS4 DPF30L. THERMAL DATA. Rthj-amb (*)Thermal Resistance Junction-ambient Single Operation 78 C/W. dual Operating C/W. Tj Thermal Operating Junction-ambient -55 to150 C. Tstg Storage Temperature -55 to 150 C. (*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.]

4 ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED). OFF. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID = 250 A, VGS = 0 30 V. Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 A. Drain Current (VGS = 0) VDS = Max Rating TC = 125 C 10 A. IGSS Gate-body Leakage VGS = 16 V 100 nA. Current (VDS = 0). ON (*). Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 A 1 V. RDS(on) Static Drain-source On VGS = 10 V ID = 2 A . Resistance VGS = V ID = 2 A.

5 DYNAMIC. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS= 15V ID = 2 A 10 S. Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1350 pF. Coss Output Capacitance 490 pF. Crss Reverse Transfer 130 pF. Capacitance 2/6. STS4 DPF30L. ELECTRICAL CHARACTERISTICS (continued). SWITCHING ON. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 15 V ID = 2 A 25 ns tr Rise Time RG = VGS = V 35 ns (Resistive Load, Figure 1). Qg Total Gate Charge VDD= 24 V ID= 4 A VGS= 5 V 16 nC.

6 Qgs Gate-Source Charge 5 nC. Qgd Gate-Drain Charge (See test circuit, Figure 2) 3 nC. SWITCHING OFF. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off Delay Time VDD = 15 V ID = 2 A 125 ns tf Fall Time RG = , VGS = V 35 ns (Resistive Load, Figure 1). SOURCE DRAIN DIODE. Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4 A. ISDM ( ) Source-drain Current (pulsed) 16 A. VSD (*) Forward On Voltage ISD = 4 A VGS = 0 V. trr Reverse Recovery Time ISD = 4 A di/dt = 100A/ s 45 ns Qrr Reverse Recovery Charge VDD = 15 V Tj = 150 C 36 nC.

7 IRRM Reverse Recovery Current (See test circuit, Figure 3) A. (*)Pulsed: Pulse duration = 300 s, duty cycle %. ( )Pulse width limited by safe operating area. 3/6. STS4 DPF30L. Fig. 1: Switching Times Test Circuits For Resistive Fig. 2: Gate Charge test Circuit Load Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6. STS4 DPF30L. SO-8 MECHANICAL DATA. mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A a1 a2 a3 b b1 C c1 45 (typ.). D E e e3 F L M S 8 (max.). 0016023. 5/6. STS4 DPF30L. Information furnished is believed to be accurate and reliable.

8 However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

9 The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 6/6.