Insulated Gate Bipolar Transistor (Trench IGBT), 100 A

1 GT100DA60U. Vishay Semiconductors Insulated gate Bipolar Transistor (Trench IGBT), 100 A. FEATURES. Trench IGBT technology with positive temperature coefficient Square RBSOA. 3 s short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery SOT-227 TJ maximum = 175 C. Fully isolated package Very low internal inductance ( 5 nH typical). Industry standard outline UL approved file E78996. PRODUCT SUMMARY Compliant to RoHS directive 2002/95/EC. VCES 600 V. BENEFITS. IC DC 100 A at 117 C Designed for increased operating efficiency in power VCE(on) typical at 100 A, 25 C V conversion: UPS, SMPS, welding, induction heating IF DC 100 A at 25 C Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Speed 4 kHz to 30 kHz Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL TEST CONDITIONS MAX.

2 UNITS. Collector to emitter voltage VCES 600 V. TC = 25 C 184. Continuous collector current IC (1). TC = 80 C 137. Pulsed collector current ICM 350. Clamped inductive load current ILM 350 A. TC = 25 C 100. Diode continuous forward current IF. TC = 80 C 71. Peak diode forward current IFSM 200. gate to emitter voltage VGE 20 V. TC = 25 C 577. Power dissipation, IGBT PD. TC = 117 C 223. W. TC = 25 C 205. Power dissipation, diode PD. TC = 117 C 79. Isolation voltage VISOL Any terminal to case, t = 1 min 2500 V. Note (1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals Document Number: 93185 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 1. GT100DA60U. Vishay Semiconductors Insulated gate Bipolar Transistor (Trench IGBT), 100 A. ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified).

3 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS. Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 250 A 600 - - VGE = 15 V, IC = 100 A - Collector to emitter voltage VCE(on) V. VGE = 15 V, IC = 100 A, TJ = 125 C - gate threshold voltage VGE(th) VCE = VGE, IC = 250 A Temperature coefficient of VGE(th)/ TJ VCE = VGE, IC = 1 mA (25 C to 125 C) - - - mV/ C. threshold voltage VGE = 0 V, VCE = 600 V - 100 A. Collector to emitter leakage current ICES. VGE = 0 V, VCE = 600 V, TJ = 125 C - 3 mA. IF = 40 A, VGE = 0 V - Forward voltage drop VFM V. IF = 40 A, VGE = 0 V, TJ = 125 C - gate to emitter leakage current IGES VGE = 20 V - - 200 nA. SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise specified). PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS. Turn-on switching loss Eon - - IC = 100 A, VCC = 360 V, Turn-off switching loss Eoff VGE = 15 V, Rg = 5 - - L = 500 H, TJ = 25 C.

4 Total switching loss Etot - - mJ. Turn-on switching loss Eon - - Energy losses Turn-off switching loss Eoff include tail and - - Total switching loss Etot diode recovery - - IC = 100 A, VCC = 360 V, (see fig. 18). Turn-on delay time td(on) VGE = 15 V, Rg = 5 - 162 - L = 500 H, TJ = 125 C. Rise time tr - 55 - ns Turn-off delay time td(off) - 150 - Fall time tf - 129 - TJ = 175 C, IC = 350 A, Rg = 22 . Reverse bias safe operating area RBSOA VGE = 15 V to 0 V, VCC = 400 V, Fullsquare VP = 600 V, L = 500 H. Diode reverse recovery time trr - 61 85 ns Diode peak reverse current Irr IF = 50 A, dIF/dt = 200 A/ s, VR = 200 V - 4 7 A. Diode recovery charge Qrr - 120 297 nC. Diode reverse recovery time trr - 133 154 ns IF = 50 A, dIF/dt = 200 A/ s, Diode peak reverse current Irr - 12 15 A. VR = 200 V, TJ = 125 C. Diode recovery charge Qrr - 750 1150 nC. TJ = 175 C, Rg = 22 , Short circuit safe operating area SCSOA VGE = 15 V to 0 V, VCC = 400 V, 3 s Vp = 600 V.

5 For technical questions within your region, please contact one of the following: Document Number: 93185. 2 Revision: 22-Jul-10. GT100DA60U. Insulated gate Bipolar Transistor Vishay Semiconductors (Trench IGBT), 100 A. THERMAL AND MECHANICAL SPECIFICATIONS. PARAMETER SYMBOL MIN. TYP. MAX. UNITS. Maximum junction and storage temperature range TJ, TStg - 40 - 175 C. IGBT - - Junction to case RthJC. Diode - - C/W. Case to sink per module RthCS - - Mounting torque, 6-32 or M3 screw - - Nm Weight - 30 - g 180 300. Allowable Case Temperature ( C). 275. 160. 250. 140. 225 TJ = 125 C. 120 200. 175. 100. IC (A). 150 TJ = 25 C. 80 TJ = 175 C. 125. 60 100. 75. 40. 50. 20. 25. 0 0. 0 20 40 60 80 100 120 140 160 180 200 0 93185_01 IC - Continuous Collector Current (A) 93185_02 VCE (V). Fig. 1 - Maximum DC IGBT Collector Current vs. Fig. 3 - Typical IGBT Collector Current Characteristics Case Temperature VGE = 15 V.

6 1000 180. Allowable Case Temperature ( C). 160. 100 140. 120. 10. 100. IC (A). 80. 1. 60. 40. 20. 0. 1 10 100 1000 0 20 40 60 80 100 120. 93185_02 VCE (V) 93185_04 IF - Continuous Forward Current (A). Fig. 2 - IGBT Reverse Bias SOA Fig. 4 - Maximum DC Forward Current vs. TJ = 175 C, VGE = 15 V Case Temperature Document Number: 93185 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 3. GT100DA60U. Vishay Semiconductors Insulated gate Bipolar Transistor (Trench IGBT), 100 A. 200 175. 150 TJ = 175 C. 100 A. 125. VCE (V). IF (A). 100 TJ = 125 C. 75 50 A. 50 TJ = 25 C. 27 A. 25. 0 0 20 60 100 140 180. 93185_05 VFM (V) 93185_08 TJ ( C). Fig. 5 - Typical Diode Forward Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V. 10 1 TJ = 175 C Energy (mJ). Eoff ICES (mA). TJ = 125 C. TJ = 25 C Eon 0. 100 200 300 400 500 600 10 30 50 70 90 110.

7 93185_06 VCES (V) 93185_09 IC (A). Fig. 6 - Typical IGBT Zero gate Voltage Collector Current Fig. 9 - Typical IGBT Energy Loss vs. IC. TJ = 125 C, L = 500 H, VCC = 360 V, Rg = 5 , VGE = 15 V. 1000. tf TJ = 25 C. Switching Time (ns). td(off). Vgeth (V). 100 td(on). tr TJ = 125 C. 10. 0 20 40 60 80 100 120. 93185_07 IC (mA) 93185_10 IC (A). Fig. 7 - Typical IGBT Threshold Voltage Fig. 10 - Typical IGBT Switching Time vs. IC. TJ = 125 C, L = 500 H, VCC = 360 V, Rg = 5 , VGE = 15 V. For technical questions within your region, please contact one of the following: Document Number: 93185. 4 Revision: 22-Jul-10. GT100DA60U. Insulated gate Bipolar Transistor Vishay Semiconductors (Trench IGBT), 100 A. 6 190. 170. 5. 150. 4 TJ = 125 C. Energy (mJ). 130. Eoff trr (ns). 3 110. 90. 2 Eon 70 TJ = 25 C. 1. 50. 0 30. 0 10 20 30 40 50 100 1000. 93185_11 Rg ( ) 93185_13 dIF/dt (A/ s). Fig. 11 - Typical IGBT Energy Loss vs.

8 Rg Fig. 13 - Typical trr Diode vs. dIF/dt TJ = 125 C, IC = 100 A, L = 500 H, Vrr = 200 V, IF = 50 A. VCC = 360 V, VGE = 15 V. 1000 30. td(on). 25. Switching Time (ns). td(off). 20 TJ = 125 C. Irr (A). 100 tf 15. tr 10. TJ = 25 C. 5. 10 0. 0 10 20 30 40 50 100 1000. 93185_12 Rg ( ) 93185_14 dIF/dt (A/ s). Fig. 12 - Typical IGBT Switching Time vs. Rg Fig. 14 - Typical Irr Diode vs. dIF/dt TJ = 125 C, L = 500 H, VCC = 360 V, Vrr = 200 V, IF = 50 A. IC = 100 A, VGE = 15 V. 1400. 1200. 1000 TJ = 125 C. Qrr (nC). 800. 600. 400. TJ = 25 C. 200. 0. 100 1000. 93185_15 dIF/dt (A/ s). Fig. 15 - Typical Qrr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A. Document Number: 93185 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 5. GT100DA60U. Vishay Semiconductors Insulated gate Bipolar Transistor (Trench IGBT), 100 A. 1. ZthJC - Thermal Impedance Junction to Case ( C/W).

9 D = D = D = D = D = D = DC. 1 10. 93185_16 t1 - Rectangular Pulse Duration (s). Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT). 1. ZthJC - Thermal Impedance Junction to Case ( C/W). D = D = D = D = D = D = DC. 1 10. 93185_17 t1 - Rectangular Pulse Duration (s). Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode). For technical questions within your region, please contact one of the following: Document Number: 93185. 6 Revision: 22-Jul-10. GT100DA60U. Insulated gate Bipolar Transistor Vishay Semiconductors (Trench IGBT), 100 A. VCC. R=. ICM. L VC *. 50 V. 1000 V. +. -V. 1 CC. 2. Rg * Driver same type as ; VC = 80 % of Vce(max). * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/. L. - +. -5V +. - VCC. driver Rg Fig.

10 19a - Switching Loss Test Circuit 1. 2. 90 %. 3 10 %. VC. 90 %. td(off). 10 %. 5%. IC. tr tf td(on) t = 5 s Eon Eoff Ets = (Eon + Eoff). Fig. 19b - Switching Loss Waveforms Test Circuit Document Number: 93185 For technical questions within your region, please contact one of the following: Revision: 22-Jul-10 7. GT100DA60U. Vishay Semiconductors Insulated gate Bipolar Transistor (Trench IGBT), 100 A. ORDERING INFORMATION TABLE. Device code G T 100 D A 60 U. 1 2 3 4 5 6 7. 1 - Insulated gate Bipolar Transistor (IGBT). 2 - T = Trench IGBT technology 3 - Current rating (100 = 100 A). 4 - Circuit configuration (D = Single switch with antiparallel diode). 5 - Package indicator (A = SOT-227). 6 - Voltage rating (60 = 600 V). 7 - Speed/type (U = Ultrafast). CIRCUIT CONFIGURATION. 3 (C). 2 (G). 1, 4 (E). LINKS TO RELATED DOCUMENTS. Dimensions Packaging information For technical questions within your region, please contact one of the following: Document Number: 93185.