IRG4PC50W - Infineon Technologies

1 PD - 91657B. IRG4PC50W . INSULATED GATE BIPOLAR TRANSISTOR. Features C. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) VCES = 600V. applications Industry-benchmark switching losses improve G VCE(on) max. = efficiency of all power supply topologies 50% reduction of Eoff parameter E @VGE = 15V, IC = 27A. Low IGBT conduction losses Latest-generation IGBT design and construction offers n-channel tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode). Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz).

2 TO-247AC. Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V. IC @ TC = 25 C Continuous Collector Current 55. IC @ TC = 100 C Continuous Collector Current 27 A. ICM Pulsed Collector Current Q 220. ILM Clamped Inductive Load Current R 220. VGE Gate-to-Emitter Voltage 20 V. EARV Reverse Voltage Avalanche Energy S 170 mJ. PD @ T C = 25 C Maximum Power Dissipation 200. W. PD @ T C = 100 C Maximum Power Dissipation 78. TJ Operating Junction and -55 to + 150. TSTG Storage Temperature Range C. Soldering Temperature, for 10 seconds 300 ( in. ( from case ). Mounting torque, 6-32 or M3 screw. 10 lbf in ( m). Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case R CS Case-to-Sink, Flat, Greased Surface C/W. R JA Junction-to-Ambient, typical socket mount 40.)

3 Wt Weight 6 ( ) g (oz). 1. 2/7/2000. IRG4PC50W . Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250 A. V(BR)CES Emitter-to-Collector Breakdown Voltage T 18 V VGE = 0V, IC = V(BR)CES/ TJ Temperature Coeff. of Breakdown Voltage V/ C VGE = 0V, IC = IC = 27A VGE = 15V. VCE(ON) Collector-to-Emitter Saturation Voltage IC = 55A See , 5. V. IC = 27A , TJ = 150 C. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 A. VGE(th)/ TJ Temperature Coeff. of Threshold Voltage -11 mV/ C VCE = VGE, IC = gfe Forward Transconductance U 27 41 S VCE = 100 V, IC = 27A. 250 VGE = 0V, VCE = 600V. ICES Zero Gate Voltage Collector Current A. VGE = 0V, VCE = 10V, TJ = 25 C. 5000 VGE = 0V, VCE = 600V, TJ = 150 C.

4 IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V. switching Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 180 270 IC = 27A. Qge Gate - Emitter Charge (turn-on) 24 36 nC VCC = 400V See Qgc Gate - Collector Charge (turn-on) 63 95 VGE = 15V. td(on) Turn-On Delay Time 46 . tr Rise Time 33 TJ = 25 C. ns td(off) Turn-Off Delay Time 120 180 IC = 27A, VCC = 480V. tf Fall Time 57 86 VGE = 15V, RG = . Eon Turn-On switching Loss Energy losses include "tail". Eoff Turn-Off switching Loss mJ See Fig. 9, 10, 14. Ets Total switching Loss td(on) Turn-On Delay Time 31 TJ = 150 C, tr Rise Time 43 IC = 27A, VCC = 480V. ns td(off) Turn-Off Delay Time 210 VGE = 15V, RG = . tf Fall Time 62 Energy losses include "tail". Ets Total switching Loss mJ See Fig.

5 10,11, 14. LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 3700 VGE = 0V. Coes Output Capacitance 260 pF VCC = 30V See Fig. 7. Cres Reverse Transfer Capacitance 68 = Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ). R VCC = 80%(VCES), VGE = 20V, L = 10 H, RG = , T Pulse width 80 s; duty factor (See fig. 13a) U Pulse width s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 IRG4PC50W . 100. F o r b o th : T ria n g u la r w a v e : D uty cy cle: 50%. TJ = 125 C. 80 T s ink = 90 C. G ate drive as s pecified P o w e r D is s ip a tio n = 4 0 W C la m p vo lta g e : Load Current ( A ). 8 0 % o f ra te d 60. S q u a re wa ve: 6 0 % o f ra te d vo l ta g e 40. 20.

6 Ide a l d io de s 0 A. 1 10 100 1000. f, Frequency (kHz). Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental). 1000 1000. I C , Collector-to-Emitter Current (A). I C , Collector-to-Emitter Current (A). 100 100.. TJ = 150 C.. TJ = 150 C.. TJ = 25 C.. TJ = 25 C. 10 10. 1.. V GE = 15V. 20 s PULSE WIDTH. 1.. V = 50V. CC. 5 s PULSE WIDTH. 1 10 5 6 7 8 9 10 11. VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V). Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3. IRG4PC50W . 60.. VGE = 15V. 80 us PULSE WIDTH. VCE , Collector-to-Emitter Voltage(V). Maximum DC Collector Current(A). 50. 40.. I C = 54 A. 30 . I C = 27 A. 20.. I C = A. 10. 0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160. TC , Case Temperature ( C) TJ , Junction Temperature ( C).

7 Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature 1. Thermal Response (Z thJC ).. SINGLE PULSE. (THERMAL RESPONSE). P DM. t1. t2.. Notes: 1. Duty factor D = t 1 / t 2. 2. Peak TJ = PDM x Z thJC + TC. 1. t1 , Rectangular Pulse Duration (sec). Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 IRG4PC50W .. 8000.. 20. VGE = 0V, f = 1 MHz VCC = 400V. Cies = Cge + Cgc , Cce SHORTED I C = 27A. Cres = Cgc VGE , Gate-to-Emitter Voltage (V). Coes = Cce + Cgc 16. 6000. C, Capacitance (pF).. Cies 12. 4000. 8. C . oes 2000. C . 4. res 0 0. 1 10 100 0 40 80 120 160 200. VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC). Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

8 Collector-to-Emitter Voltage Gate-to-Emitter Voltage . 10.. V CC = 480V . RG = Ohm V GE = 15V VGE = 15V. TJ = 25 C VCC = 480V. I C = 27A. Total switching Losses (mJ). Total switching Losses (mJ).. IC = 54 A.. IC = 27 A. 1.. IC = A. 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160. RGRG, ,Gate GateResistance ). Resistance ((Ohm) TJ , Junction Temperature ( C ). Fig. 9 - Typical switching Losses vs. Gate Fig. 10 - Typical switching Losses vs. Resistance Junction Temperature 5. IRG4PC50W .. 1000. RG . = Ohm VGE = 20V. TJ = 150 C T J = 125 oC. VCC = 480V. I C , Collector-to-Emitter Current (A). VGE = 15V. Total switching Losses (mJ). 100. 10. SAFE OPERATING AREA. 1. 0 10 20 30 40 50 60 1 10 100 1000. I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V). Fig.

9 11 - Typical switching Losses vs. Fig. 12 - Turn-Off SOA. Collector-to-Emitter Current 6 IRG4PC50W . L D .U .T. VC * 480V. RL =. 4 X I C@25 C. 50V 0 - 480V. 1 00 0V 480 F. 960V. Q. R. * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ). * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC. L. D river* D .U .T. Fig. 14a - switching Loss VC Test Circuit 50V. 1000V. * Driver same type Q as , VC = 480V. R S. Q. R. 90 %. S 10 %. VC. 90 %. t d (o ff). Fig. 14b - switching Loss Waveforms 1 0%. IC 5%. tr tf t d (o n ) t=5 s Eon E o ff E ts = (E o n +E o ff ). 7. IRG4PC50W . Case Outline and Dimensions TO-247AC. N O TE S : 3 .6 5 (.1 4 3 ) -D- 5.

10 3 0 ( .2 0 9 ) 1 D IM E N S IO N S & T O L E R A N C IN G. 1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5 M , 1 9 8 2 . 1 5 .3 0 (.6 0 2 ) 4 .7 0 ( .1 8 5 ). 0 .2 5 (.0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H . -B- -A- 2 .5 0 (.0 8 9 ). 3 D IM E N S IO N S A R E S H O W N. 1 .5 0 (.0 5 9 ) M ILL IM E T E R S (IN C H E S ). 5 .5 0 (.2 1 7) 4 4 C O N F O R M S T O JE D E C O U T L IN E. T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ). 1 9 .7 0 (.7 7 5 ) 5 .5 0 (.2 17 ). 2X. 4 .5 0 (.1 77 ) LEAD A S S IG N M E N T S. 1- GATE. 1 2 3 2- COLLE CTO R. 3- E M IT T E R. 4- COLLE CTO R. -C- 1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 ). * 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * L O N G E R L E A D E D (2 0m m ). V E R S IO N A V A IL A B LE (T O -24 7 A D ). T O O R D E R A D D "-E " S U F F IX.