Microelectromechanical Systems (MEMS) Actuators - RIT

1 MEMs Actuators ROCHESTER INSTITUTE OF TEHNOLOGY. MICROELECTRONIC ENGINEERING. Microelectromechanical Systems (MEMS). Actuators Dr. Lynn Fuller and Dr. Ivan Puchades Webpage: Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604. Tel (585) 475-2035. Email: MicroE Dept Webpage: Rochester Institute of Technology October 31, 2016 Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 1. MEMs Actuators INTRODUCTION. Actuators Thermal Two beam heated cantilever Polyimide on Heaters Bimetalic heaters on diaphragms Electrostatic Capacitor Plate Drive Comb Drive Other Electromagnetic Peizoelectric Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr.

2 Lynn Fuller Page 2. MEMs Actuators OUTLINE. Polycrystalline Silicon Thermal Actuators Chevron Actuators Heated Diaphragm Actuators Heated Polyimide Cantilever Mirrors Polyimide Thermal Actuators A Walking Silicon Micro-Robot Thermal Mirrors Electrostatic Force Digital Light Projection Electrostatic Impact-Drive Microactuator Shuffle Motor Electrostatic Comb Drive Magnetic Actuators on a Diaphragm Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 3. MEMs Actuators POLYCRYSTALLINE SILICON THERMAL Actuators . Polycrystalline Silicon Thermal Actuators Integrated with Photodetector Position Sensors Kevin Munger Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr.

3 Lynn Fuller Page 4. MEMs Actuators POLYCRYSTALLINE SILICON THERMAL Actuators . No current flow Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 5. MEMs Actuators POLYCRYSTALLINE SILICON THERMAL Actuators . Current flow Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 6. MEMs Actuators SELECTED MATERIAL PROPERTIES. Thermal Young's Thermal Density Expansion Modulus Conductivity ppm/ C 1012 dyne/cm2 w/cmK gm/cm3. Silicone Elastomers 275-300. Unfilled Epoxies 100-200 Filled Epoxies 50-125. Aluminum 20-25 Copper 15-20 Gold Silicon (single crystal) Poly Silicon Inconel Nickel-Iron Alumina Ceramic Borosilicate Glass Silicon Dioxide Silicon Nitride Diamond 11 20.

4 Air - Rochester Institute of Technology - Water - 10 dyne/cm2 = 1 newton/m Microelectronic Engineering - 2 October 31, 2016 Dr. Lynn Fuller Page 7. MEMs Actuators THERMAL EXPANSION. 1. How much will a 500 um long bar of aluminum expand if it is heated 200 C above ambient? DL/L = 22 ppm/C. = 22 x 200 = 4400 ppm = 4400E-6. DL = 4400E-6 x 500 um = um 2. If the hot arm on a 200 m Si actuator is 400C hotter than the cold arm how much longer will it be ? DL/L = ppm/C. = x 400 = 932 ppm = 960E-6. DL = 960E-6 x 200 um = um Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr.

5 Lynn Fuller Page 8. MEMs Actuators FINITE ELEMENT ANALYSIS OF THERMAL BENDING. Small arm 400 C, 10um X 200 um Large arm 0 C, 30 um x 200 um Maximum Displacement = um Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 9. MEMs Actuators FEA SIMULATION. Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 10. MEMs Actuators INTEGRATION OF PHOTODIODE AND MEMS. December 2001. Kevin Munger. joined IBM Burlington, VT. Thermal Actuator with Integrated Photodiode Maximum Deflection 9 m at 30 w Rochester Institute of Technology 162,000 cycles, 6 msec.

6 , Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 11. MEMs Actuators POLYCRYSTALLINE SILICON THERMAL Actuators . Summary These devices give large mechanical motion on the order of several to few 10's of micrometers These devices are analog Integrated with analog photodiode position detection can give feedback for accurate position Cycle fatigue seems to be infinite Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 12. MEMs Actuators CHEVRON ACTUATOR. 10 Angle 1000um Thermal Expansion for Si is C. Current flow causes heating and movement Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr.

7 Lynn Fuller Page 13. MEMs Actuators CHEVRON ACTUATOR. 10 Angle 1000um Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 14. MEMs Actuators MODIFIED BULK PROCESS FOR MEMS CLASS 2004-06. Movie Thermopile Accelerometer Speaker Inductor Rochester Institute of Technology Microelectronic Engineering Pressure Sensor October 31, 2016 Dr. Lynn Fuller Page 15. MEMs Actuators DIAPHRAGM. diaphragm Diaphragm: thickness ( ). Displacement Radius (R). Uniform Pressure (P). Displacement (y). Equation for deflection at center of diaphragm 3PR 4[(1/ )2-1]. 4 2-1].

8 Y= = ( )PR2 [(1/ ). 16E(1/ )2 3 E(1/ ) . 3. = Poisson's Ratio *The second equation corrects all units E = Young's Modulus, assuming that pressure is mmHg, radius and diaphragm is m, Young's for Aluminum = Modulus is dynes/cm2, and the Rochester Institute of Technology calculated displacement found is m. Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 16. MEMs Actuators SELECTED MATERIAL PROPERTIES. Thermal Young's Thermal Density Expansion Modulus Conductivity ppm/ C 1012 dyne/cm2 w/cmK gm/cm3. Silicone Elastomers 275-300. Unfilled Epoxies 100-200 Filled Epoxies 50-125. Aluminum 20-25 Copper 15-20 Gold Silicon (single crystal) Poly Silicon Inconel Nickel-Iron Alumina Ceramic Borosilicate Glass Silicon Dioxide Silicon Nitride Diamond 11 20.]

9 Air - Rochester Institute of Technology - Water - 10 dyne/cm2 = 1 newton/m Microelectronic Engineering - 2 October 31, 2016 Dr. Lynn Fuller Page 17. MEMs Actuators CALCULATOR FOR DIAPHRAGM DEFLECTIONS. Rochester Institute of Technology 5-Apr-06. Dr. Lynn Fuller Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623. Deflection Ymax = P L 4(1-Nu2)/EH3 Ymax = m P = Pressure P= 15 lbs/in2. L = Length of side of square diaphragm L= 1000 m E = Youngs Modulus E= +11 N/m2. Nu = Poissons Ratio Nu = H = Diaphragm Thickness H= 35 m P= +05 Pascal Stress = P (L/H)2 (at center of each edge) Stress = +07 Pascal P = Pressure Yield Strength = +10 Pascal L = Square Diaphragm Side Length H = Diaphragm Thickness Capacitance = eoer Area/d C= F.

10 Eo = Permitivitty of free space = F/cm er = relative permitivitty = 1 for air Area = cm2. Area = area of plates x number of plates N= 1. d = distance between plates d= 1 m If round plates, Diameter = 0 m If square plates, Side = 3000 m Rochester Institute of Technology Microelectronic Engineering October 31, 2016 Dr. Lynn Fuller Page 18. MEMs Actuators CALCULATOR FOR DIAPHRAGM DEFLECTIONS. Rochester Institute of Technology 11-Feb-14. Dr. Lynn Fuller Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623. To use this spread sheet enter values in the white boxes. The rest of the sheet is protected and should not be changed unless you are sure of the consequences.