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Nanoscale silicon field effect transistors fabricated using ...
nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 232 cm lithography field with good uniformity.
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Patterning of light-extraction nanostructures on sapphire ...
www.princeton.edunanoimprint lithography. The SiO 2 mask patterning has five key steps (figures 1(a)–(d)): (1) deposition of a 350nm thick SiO 2 layer on sapphire by plasma-enhanced chemical vapor deposition at 250°C, using a mixture of silane (SiH 4)and nitrous oxide (N 2O); (2) UV nanoimprint lithography of nanoholes with 200nm pitch and 125nm diameter ...