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NTE5400 thru NTE5406 Silicon Controlled Rectifier …

NTE5400 thru NTE5406 Silicon Controlled Rectifier (SCR) Amp Sensitive Gate, TO92 Description:The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectionalgate Controlled rectifiers (SCR thyristor) rated at amps RMS maximum on state current, withrated voltages up to 600 devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge in a TO92 plastic package, these devices feature excellent environmental stress and tem-perature cycling characteristics and, coupled with their small size and electrical performance, lendthemselves to various types of control functions encountered with sensors, motors, lamps, relays,counters, triggers, Maximum Ratings.

NTE5400 thru NTE5406 Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional

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Transcription of NTE5400 thru NTE5406 Silicon Controlled Rectifier …

1 NTE5400 thru NTE5406 Silicon Controlled Rectifier (SCR) Amp Sensitive Gate, TO92 Description:The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectionalgate Controlled rectifiers (SCR thyristor) rated at amps RMS maximum on state current, withrated voltages up to 600 devices feature 200 microamp gate sensitivity, 5 millamp holding current and 8 amp surge in a TO92 plastic package, these devices feature excellent environmental stress and tem-perature cycling characteristics and, coupled with their small size and electrical performance, lendthemselves to various types of control functions encountered with sensors, motors, lamps, relays,counters, triggers, Maximum Ratings.

2 Repetitive Peak Reverse Voltage (TC = +100 C), Peak Off State Voltage (TC = +100 C), On State Current, IT(RMS) Surge (Non Repetitive) On State Current (One Cycle at 50 or 60Hz), Gate Trigger Current (3 s Max), Gate Power Dissipation (IGT IGTM for 3 s Max), Gate Power Dissipation, PG(AV) Temperature Range, Topr 40 to +100 Temperature Range, Tstg 40 to +150 3 16 Electrical Characteristics:ParameterSymbolTest ConditionsMinTypMaxUnitPeak Off State CurrentIRRMVRRM = Max, VDRXM = Max,TC = +100 C, RG K = 1k 10 AIDRXM 200 AMaximum On State VoltageVTMTC = +25 C, IT = (Peak) Holding CurrentIHOLDTC = +25 C 3mADC Gate Trigger CurrentIGTVD = 6 VDC, RL = 100 , TC = +25 C 50200 ADC Gate Trigger VoltageVGTVD = 6 VDC, RL = 100 , TC = +25 C for Fusing ReferenceI2t> Rate of AppliedForward Voltagedv/dt(critical)TC = +100 C 5 V/ sKG ( ) (.)

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