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Optocoupler, Phototransistor Output, with Base Connection

4N35, 4N36, 4N37. Vishay Semiconductors optocoupler , Phototransistor output , with base Connection FEATURES. A 1 6 B Isolation test voltage 5000 VRMS. Interfaces with common logic families C 2 5 C. Input- output coupling capacitance < pF. NC 3 4 E. Industry standard dual-in-line 6 pin package Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. 21842. APPLICATIONS. i179004-5. AC mains detection Reed relay driving DESCRIPTION Switch mode power supply feedback Each optocoupler consists of gallium arsenide infrared LED Telephone ring detection and a silicon NPN Phototransistor . Logic ground isolation AGENCY APPROVALS Logic coupling with high frequency noise rejection Underwriters laboratory file no. E52744. BSI: EN 60065:2002, EN 60950:2000. FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156. ORDER INFORMATION. PART REMARKS. 4N35 CTR > 100 %, DIP-6. 4N36 CTR > 100 %, DIP-6.

DC current transfer ratio (1) VCE = 10 V, IF = 10 mA 4N35 CTRDC 100 % 4N36 CTRDC 100 % 4N37 CTRDC 100 % VCE = 10 V, IF = 10 mA, TA = - 55 °C to + 100 °C 4N35 CTRDC 40 50 % 4N36 CTRDC 40 50 % 4N37 CTRDC 40 50 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Switching time (1) VCC = 10 V, IC = 2 …

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Transcription of Optocoupler, Phototransistor Output, with Base Connection

1 4N35, 4N36, 4N37. Vishay Semiconductors optocoupler , Phototransistor output , with base Connection FEATURES. A 1 6 B Isolation test voltage 5000 VRMS. Interfaces with common logic families C 2 5 C. Input- output coupling capacitance < pF. NC 3 4 E. Industry standard dual-in-line 6 pin package Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. 21842. APPLICATIONS. i179004-5. AC mains detection Reed relay driving DESCRIPTION Switch mode power supply feedback Each optocoupler consists of gallium arsenide infrared LED Telephone ring detection and a silicon NPN Phototransistor . Logic ground isolation AGENCY APPROVALS Logic coupling with high frequency noise rejection Underwriters laboratory file no. E52744. BSI: EN 60065:2002, EN 60950:2000. FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156. ORDER INFORMATION. PART REMARKS. 4N35 CTR > 100 %, DIP-6. 4N36 CTR > 100 %, DIP-6.

2 4N37 CTR > 100 %, DIP-6. ABSOLUTE MAXIMUM RATINGS (1). PARAMETER TEST CONDITION SYMBOL VALUE UNIT. INPUT. Reverse voltage VR 6 V. Forward current IF 50 mA. Surge current t 10 s IFSM 1 A. Power dissipation Pdiss 70 mW. output . Collector emitter breakdown voltage VCEO 70 V. Emitter base breakdown voltage VEBO 7 V. IC 50 mA. Collector current t 1 ms IC 100 mA. Power dissipation Pdiss 70 mW. COUPLER. Isolation test voltage VISO 5000 VRMS. Creepage 7 mm Clearance 7 mm Isolation thickness between emitter mm and detector Document Number: 81181 For technical questions, contact: Rev. , 07-Jan-10 153. 4N35, 4N36, 4N37. Vishay Semiconductors optocoupler , Phototransistor output , with base Connection ABSOLUTE MAXIMUM RATINGS (1). PARAMETER TEST CONDITION SYMBOL VALUE UNIT. COUPLER. Comparative tracking index DIN IEC 112/VDE 0303, part 1 175. VIO = 500 V, Tamb = 25 C RIO 1012 . Isolation resistance VIO = 500 V, Tamb = 100 C RIO 1011.

3 Storage temperature Tstg - 55 to + 150 C. Operating temperature Tamb - 55 to + 100 C. Junction temperature Tj 100 C. s dip soldering: Soldering temperature (2) distance to seating plane Tsld 260 C. mm Notes (1) T. amb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL characteristics (1). PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT. INPUT. Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF. IF = 10 mA VF V. Forward voltage (2). IF = 10 mA, Tamb = - 55 C VF V.

4 Reverse current (2) VR = 6 V IR 10 A. Capacitance VR = 0 V, f = 1 MHz CO 25 pF. output . 4N35 BVCEO 30 V. Collector emitter breakdown IC = 1 mA 4N36 BVCEO 30 V. voltage(2). 4N37 BVCEO 30 V. Emitter collector breakdown IE = 100 A BVECO 7 V. voltage(2). output . 4N35 BVCBO 70 V. Collector base breakdown IC = 100 A, IB = 1 A 4N36 BVCBO 70 V. voltage (2). 4N37 BVCBO 70 V. 4N35 ICEO 5 50 nA. VCE = 10 V, IF = 0. 4N36 ICEO 5 50 nA. VCE = 10 V, IF = 0 4N37 ICEO 5 50 nA. Collector emitter leakage current (2). 4N35 ICEO 500 A. VCE = 30 V, IF = 0, 4N36 ICEO 500 A. Tamb = 100 C. 4N37 ICEO 500 A. Collector emitter capacitance VCE = 0 CCE 6 pF. COUPLER. Resistance, input output (2) VIO = 500 V RIO 1011 . Capacitance, input output f = 1 MHz CIO pF. Notes (1) T. amb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation.

5 Typical values are for information only and are not part of the testing requirements. (2) Indicates JEDEC registered value. For technical questions, contact: Document Number: 81181. 154 Rev. , 07-Jan-10. 4N35, 4N36, 4N37. optocoupler , Phototransistor output , Vishay Semiconductors with base Connection CURRENT TRANSFER RATIO. PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT. 4N35 CTRDC 100 %. VCE = 10 V, IF = 10 mA 4N36 CTRDC 100 %. 4N37 CTRDC 100 %. DC current transfer ratio (1). 4N35 CTRDC 40 50 %. VCE = 10 V, IF = 10 mA, 4N36 CTRDC 40 50 %. TA = - 55 C to + 100 C. 4N37 CTRDC 40 50 %. Note (1) Indicates JEDEC registered values. switching characteristics . PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT. switching time (1) VCC = 10 V, IC = 2 mA, RL = 100 ton, toff 10 s Note (1) Indicates JEDEC registered values. TYPICAL characteristics . Tamb = 25 C, unless otherwise specied Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C.

6 VF -Forward Voltage (V). TA = - 55 C. NCTR - Normalized CTR. CTRCE(sat) VCE = V. TA = 25 C. TA = 50 C. TA = 85 C NCTR(SAT). NCTR. 1 10 100 1 10 100. i4n25_01 IF - Forward Current (mA) i4n25_03 IF - LED Current (mA). Fig. 1 - Forward Voltage vs. Forward Current Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current Normalized to: Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C VCE = 10 V, IF = 10 mA, TA = 25 C. NCTR - Normalized CTR. NCTR - Normalized CTR. CTRCE(sat) = V CTRCE(sat) VCE = V. TA = 25 C TA = 70 C. NCTR(SAT) NCTR(SAT). NCTR. NCTR. 0 1 10 100 1 10 100. i4n25_02 IF - LED Current (mA) i4n25_04 IF - LED Current (mA). Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current LED Current Document Number: 81181 For technical questions, contact: Rev. , 07-Jan-10 155. 4N35, 4N36, 4N37. Vishay Semiconductors optocoupler , Phototransistor output , with base Connection Normalized to: Normalized to: NCTRcb - Normalized CTRcb VCE = 10 V, IF = 10 mA, TA = 25 C VCB = V, IF = 10 mA, TA = 25 C.

7 NCTR - Normalized CTR. CTRCE(sat) VCE = V. TA = 85 C. 25 C. NCTR(SAT) 50 C. NCTR 70 C. 1 10 100 1 10 100. i4n25_05 IF - LED Current (mA) i4n25_08 IF - LED Current (mA). Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. Fig. 8 - Normalized CTRcb vs. LED Current and Temperature LED Current 35 10. Normalized to: ICE - Collector Current (mA). 30 Normalized Photocurrent IF = 10 mA, TA = 25 C. 25. 50 C 1. 20. 70 C. 15. 25 C 85 C. 10 Nib, TA = - 20 C. Nib, TA = 20 C. 5 Nib, TA = 50 C. Nib, TA = 70 C. 0 0 10 20 30 40 50 60 1 10 100. i4n25_06 IF - LED Current (mA) i4n25_09 IF - LED Current (mA). Fig. 6 - Collector Emitter Current vs. Fig. 9 - Normalized Photocurrent vs. IF and Temperature Temperature and LED Current 105 70 C. ICEO - Collector Emitter (nA). 4. 10. NhFE - Normalized hFE. 103 25 C. 102 - 20 C. VCE = 10 V 101 Normalized to: IB = 20 A, VCE = 10 V, Typical TA = 25 C. 100. 10- 1. 10- 2 - 20 0 20 40 60 80 100 1 10 100 1000.

8 I4n25_10 Ib - base Current ( A). i4n25_07 Tamb- Ambient Temperature ( C). Fig. 7 - Collector Emitter Leakage Current vs. Temperature Fig. 10 - Normalized Non-Saturated hFE vs. base Current and Temperature For technical questions, contact: Document Number: 81181. 156 Rev. , 07-Jan-10. 4N35, 4N36, 4N37. optocoupler , Phototransistor output , Vishay Semiconductors with base Connection NhFE(sat) - Normalized Saturated hFE. Normalized to: VCC = 5 V. VCE = 10 V, Ib = 20 A. 70 C 50 C TA = 25 C. f = 10 kHz RL. 25 C DF = 50 %. - 20 C VO. VCE = V IF = 10 mA. 1 10 100 1000. i4n25_11 Ib - base Current ( A) i4n25_14. Fig. 11 - Normalized hFE vs. base Current and Temperature Fig. 14 - switching Schematic 1000 tPLH- Propagation Delay ( s). IF = 10 mA, TA = 25 C. tPHL - Propagation Delay ( s). VCC = V, Vth = V. tPHL. 100 10 tPLH. 1 1 10 100. i4n25_12 RL - Collector Load Resistor (k ). Fig. 12 - Propagation Delay vs.

9 Collector Load Resistor IF. tD. VO tR. tPLH. VTH = V. tPHL tS tF. i4n25_13. Fig. 13 - switching Timing Document Number: 81181 For technical questions, contact: Rev. , 07-Jan-10 157. 4N35, 4N36, 4N37. Vishay Semiconductors optocoupler , Phototransistor output , with base Connection PACKAGE DIMENSIONS in millimeters typ. 6 5 4. to typ. 14771_2 1 2 3. PACKAGE MARKING. 4N35. V YWW 24. 21764-24. For technical questions, contact: Document Number: 81181. 158 Rev. , 07-Jan-10. Legal Disclaimer Notice Vishay Disclaimer . ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE. RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

10 Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.


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