MMBT4401L, SMMBT4401L Switching Transistor

1 Semiconductor Components Industries, LLC, 1994 October, 2016 Rev. 111 Publication Order Number:MMBT4401LT1/DMMBT4401L, SMMBT4401 LSwitching TransistorNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC Q101 Qualified andPPAP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGSR atingSymbolValueUnitCollector Emitter VoltageVCEO40 VdcCollector Base VoltageVCBO60 VdcEmitter Base Current ContinuousIC600mAdcCollector Current PeakICM900mAdcTHERMAL CHARACTERISTICSC haracteristicSymbolMaxUnitTotal Device Dissipation FR 5 Board (Note 1) @TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA556 C/WTotal Device Dissipation AluminaSubstrate (Note 2) @TA = 25 CDerate above 25 CThermal Resistance, Junction to AmbientRqJA417 C/WJunction and Storage TemperatureTJ, Tstg 55 to +150 CStresses exceeding those listed in the Maximum Ratings table may damage thedevice.

2 If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.*Transient pulses must not cause the junction temperature to be FR 5 = Alumina = in. 23 (TO 236)CASE 318 STYLE 6123 COLLECTOR31 BASE2 EMITTER*Date Code orientation and/or overbar mayvary depending upon manufacturing MGG2X = Specific Device CodeM= Date Code*G= Pb Free Package(Note: Microdot may be in either location)MARKING DIAGRAMD evicePackageShipping ORDERING INFORMATIONMMBT4401LT3 GSOT 23(Pb Free) For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011 23(Pb Free)3000 / Tape &Reel10,000 / Tape & , characteristics (TA = 25 C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSC ollector Emitter Breakdown Voltage (Note 3)(IC = mAdc, IB = 0)V(BR)CEO40 VdcCollector Base Breakdown Voltage(IC = mAdc, IE = 0)V(BR)CBO60 VdcEmitter Base Breakdown Voltage(IE = mAdc, IC = 0)V(BR) VdcBase Cutoff Current(VCE = 35 Vdc, VEB = Vdc)IBEV Cutoff Current(VCE = 35 Vdc, VEB = Vdc)ICEX characteristics (Note 3)DC Current Gain(IC = mAdc, VCE = Vdc)(IC = mAdc, VCE = Vdc)(IC = 10 mAdc, VCE = Vdc)

3 (IC = 150 mAdc, VCE = Vdc)(IC = 500 mAdc, VCE = Vdc)hFE20408010040 300 Collector Emitter Saturation Voltage(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VCE(sat) Emitter Saturation Voltage(IC = 150 mAdc, IB = 15 mAdc)(IC = 500 mAdc, IB = 50 mAdc)VBE(sat) SIGNAL CHARACTERISTICSC urrent Gain Bandwidth Product(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)fT250 MHzCollector Base Capacitance(VCB = Vdc, IE = 0, f = MHz)Ccb Base Capacitance(VEB = Vdc, IC = 0, f = MHz)Ceb 30pFInput Impedance(IC = mAdc, VCE = 10 Vdc, f = kHz) Feedback Ratio(IC = mAdc, VCE = 10 Vdc, f = kHz) 10 4 Small Signal Current Gain(IC = mAdc, VCE = 10 Vdc, f = kHz)hfe40500 Output Admittance(IC = mAdc, VCE = 10 Vdc, f = kHz) CHARACTERISTICSD elay Time(VCC = 30 Vdc, VEB = Vdc,IC = 150 mAdc, IB1 = 15 mAdc)td 15nsRise Timetr 20 Storage Time(VCC = 30 Vdc, IC = 150 mAdc,IB1 = IB2 = 15 mAdc)ts 225nsFall Timetf 30 Product parametric performance is indicated in the Electrical characteristics for the listed test conditions, unless otherwise noted.

4 Productperformance may not be indicated by the Electrical characteristics if operated under different Pulse Test: Pulse Width 300 ms, Duty Cycle 1. Turn On TimeFigure 2. Turn Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSS cope rise time < ns*Total shunt capacitance of test jig connectors, and oscilloscope+16 V- V< to 100 ms,DUTY CYCLE kW+ 30 V200 WCS* < 10 pF+16 V-14 V0< 20 to 100 ms,DUTY CYCLE kW+ 30 V200 WCS* < 10 pF- VMMBT4401L, 3. Charge DataIC, COLLECTOR CURRENT (mA)Q, CHARGE (nC) = 30 VIC/IB = 10 Figure 4. Turn On TimeIC, COLLECTOR CURRENT (mA) 5. Rise and Fall TimesIC, COLLECTOR CURRENT (mA)Figure 6. Storage TimeIC, COLLECTOR CURRENT (mA)Figure 7. Fall TimeIC, COLLECTOR CURRENT (mA) C100 CTRANSIENT , STORAGE TIME (ns) t, TIME (ns)t, TIME (ns)tf, FALL TIME (ns)701001020507010020030050030IC/IB = 10tr @ VCC = 30 Vtr @ VCC = 10 Vtd @ VEB = Vtd @ VEB = = 30 VIC/IB = 10trtf1020507010020030050030100200307050 3001020507010020030050030ts = ts - 1/8 tfIB1 = IB2IC/IB = 10 to 20 VCC = 30 VIB1 = IB2IC/IB = 20IC/IB = 10 MMBT4401L, 8.

5 Frequency Effectsf, FREQUENCY (kHz)SMALL SIGNAL characteristics NOISE FIGUREVCE = 10 Vdc, TA = 25 C; Bandwidth = HzNF, NOISE FIGURE (dB)IC = mA, RS = 150 WIC = 500 mA, RS = 200 WIC = 100 mA, RS = kWIC = 50 mA, RS = kWRS = OPTIMUMRS = SOURCERS = RESISTANCE100 k50100 k k 10 k20 k50 , NOISE FIGURE (dB)Figure 9. Source Resistance EffectsRS, SOURCE RESISTANCE (OHMS)f = kHzIC = 50 mAIC = 100 mAIC = 500 mAIC = mAh PARAMETERSVCE = 10 Vdc, f = kHz, TA = 25 CThis group of graphs illustrates the relationship between hfe and other h parameters for this series of transistors. To obtainthese curves, a high gain and a low gain unit were selected from the MMBT4401LT1 lines, and the same units were used todevelop the correspondingly numbered curves on each , INPUT IMPEDANCE (OHMS)Figure 10. Input ImpedanceIC, COLLECTOR CURRENT (mA)50 k50020 k10 11.

6 Voltage Feedback RatioIC, COLLECTOR CURRENT (mA) 12. Output AdmittanceIC, COLLECTOR CURRENT (mA) , OUTPUT ADMITTANCE ( mhos)oeh , VOLTAGE FEEDBACK RATIO (X 10 ) UNIT 1 MMBT4401LT1 UNIT 2 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 MMBT4401L, characteristics - 55 CFigure 13. DC Current GainIC, COLLECTOR CURRENT (A)Figure 14. Collector Saturation RegionIB, BASE CURRENT (mA) , COLLECTOR-EMITTER VOLTAGE (VOLTS)0 CEIC = mA100 mA500 , DC CURRENT = 150 C40025 CVCE = VVCE = VVCE = VFigure 15. Collector Emitter SaturationVoltage vs. Collector CurrentIC, COLLECTOR CURRENT (A) 16. Temperature CoefficientsIC, COLLECTOR CURRENT (mA)VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) + CqVC for VCE(sat)qVB for (mV/ C) - mA100150200350450-55 = 10100 MMBT4401L, CHARACTERISTICSF igure 17.

7 Base Emitter Saturation Voltage CurrentFigure 18. Base Emitter Turn On Voltage CurrentIC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A) (sat), BASE EMITTER SATURA-TION VOLTAGE (V)VBE(on), BASE EMITTER TURN ONVOLTAGE (V) C25 C 55 C25 C 55 CIC/IB = 10 VCE = VFigure 19. Input Capacitance vs. Emitter BaseVoltageFigure 20. Output Capacitance vs. CollectorBase VoltageVeb, EMITTER BASE VOLTAGE (V)Vcb, COLLECTOR BASE VOLTAGE (V) , INPUT CAPACITANCE (pF)Cobo, OUTPUT CAPACITANCE (pF) 21. Safe Operating AreaFigure 22. Current Gain Bandwidth ProductVCE, COLLECTOR EMITTER VOLTAGE (V)IC, COLLECTOR CURRENT (mA) , COLLECTOR CURRENT (A)fT, CURRENT GAIN BANDWIDTH (MHz) msec1 secVCE = VTA = 25 CSOT 23 (TO 236)CASE 318 08 ISSUE ASDATE 30 JAN 2018 SCALE 4:1DA13121 XXXMGGXXX = Specific Device CodeM= Date CodeG= Pb Free Package*This information is generic. Please refer todevice data sheet for actual part Free indicator, G or microdot G ,may or may not be DIAGRAM*NOTES:1.

8 DIMENSIONING AND TOLERANCING PER ASME , CONTROLLING DIMENSION: MAXIMUM LEAD THICKNESS INCLUDES LEAD LEAD THICKNESS IS THE MINIMUM THICKNESS OFTHE BASE DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE FOOTPRINTVIEW VIEW 22:PIN 1. RETURN2. OUTPUT3. INPUTSTYLE 6:PIN 1. BASE2. EMITTER3. COLLECTORSTYLE 7:PIN 1. EMITTER2. BASE3. COLLECTORSTYLE 8:PIN 1. ANODE2. NO CONNECTION3. CATHODESTYLE 9:PIN 1. ANODE2. ANODE3. CATHODESTYLE 10:PIN 1. DRAIN2. SOURCE3. GATESTYLE 11:PIN 1. ANODE2. CATHODE3. CATHODE ANODESTYLE 12:PIN 1. CATHODE2. CATHODE3. ANODESTYLE 13:PIN 1. SOURCE2. DRAIN3. GATESTYLE 14:PIN 1. CATHODE2. GATE3. ANODESTYLE 15:PIN 1. GATE2. CATHODE3. ANODESTYLE 16:PIN 1. ANODE2. CATHODE3. CATHODESTYLE 17:PIN 1. NO CONNECTION2. ANODE3. CATHODESTYLE 18:PIN 1. NO CONNECTION2.

9 CATHODE3. ANODESTYLE 19:PIN 1. CATHODE2. ANODE3. CATHODE ANODESTYLE 23:PIN 1. ANODE2. ANODE3. CATHODESTYLE 20:PIN 1. CATHODE2. ANODE3. GATESTYLE 21:PIN 1. GATE2. SOURCE3. DRAINSTYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1. GATE 2. DRAIN 3. SOURCESTYLE 25:PIN 1. ANODE 2. CATHODE 3. GATESTYLE 26:PIN 1. CATHODE 2. ANODE 3. NO CONNECTIONSTYLE 27:PIN 1. CATHODE 2. CATHODE 3. 100 10T T3 XTOP VIEWSIDE VIEWEND : 28:PIN 1. ANODE 2. ANODE 3. ANODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages.

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