RGS60TS65D : IGBT - Rohm

1 Data 2016 ROHM Co., Ltd. All rights 650V 30A Field Stop Trench igbt *1 Pulse width limited by CircuitlOutlineVCES650V TO-247 NIC(100 C)30 AVCE(sat) (Typ.) ) Low Collector - Emitter Saturation Voltage2) Short Circuit Withstand Time 8 s3) Qualified to AEC-Q1014) Built in Very Fast & Soft Recovery FRD5) Pb - free Lead Plating ; RoHS CompliantlPackaging SpecificationsTypePackagingTubelApplicat ionsReel Size (mm)-General InverterTape Width (mm)- for Automotive and Industrial UseBasic Ordering Unit (pcs)450 Packing CodeC11 MarkingRGS60TS65 DlAbsolute Maximum Ratings (at TC = 25 C unless otherwise specified)ParameterSymbolValueUnitCollec tor - Emitter VoltageVCES650 VGate - Emitter VoltageVGES 30 VCollector CurrentTC = 25 CIC56 ATC = 100 CIC30 APulsed Collector CurrentICP*190 ADiode Forward CurrentTC = 25 CIF56 ATC = 100 CIF30 ADiode Pulsed Forward CurrentIFP*190 APower DissipationTC = 25 CPD223 WTC = 100 CPD111 WOperating Junction TemperatureTj-40 to +175 CStorage TemperatureTstg-55 to +175 C(1) Gate (2) Collector (3) Emitter *1 *1 Built in FRD (1) (2) (3) (1) (2) (3) 1/11 - 2016 ROHM Co.

2 , Ltd. All rights SheetRGS60TS65 DlThermal ResistancelIGBT Electrical Characteristics (at Tj = 25 C unless otherwise specified)VCE = 650V, VGE = C/WThermal Resistance Diode Junction - CaseR (j-c) Resistance igbt Junction - CaseR (j-c) C/W5 ParameterSymbolConditionsValues 200 VCollector Cut - off CurrentICES--Collector - Emitter BreakdownVoltageBVCESIC = 10 A, VGE = 0V650--Tj = 25 CTj = 175 C10 Gate - Emitter Leakage CurrentIGESVGE = 30V, VCE = 0V--Gate - Emitter ThresholdVoltageVGE(th)VCE = 5V, IC = - Emitter SaturationVoltageVCE(sat)IC = 30A, VGE = 15V AmAVTj = 25 = 175 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlIGBT Electrical Characteristics (at Tj = 25 C unless otherwise specified)*2 Design assurance without CapacitanceCoesVGE = 0V-80-Reverse Transfer CapacitanceCresf = 1 MHzInput CapacitanceCiesVCE = 30V-980--13-Total Gate ChargeQgVCE = 300V-36-nCGate - Emitter ChargeQgeIC = 30A-10-Gate - Collector ChargeQgcVGE = 15V-15-Turn - on Delay Timetd(on)IC = 30A, VCC = 400V-28-nsRise TimetrVGE = 15V, RG = 10 -12-Turn - off Delay Timetd(off)Tj = 25 CIC = 30A, VCC = 400V-29--104-Fall TimetfInductive Load-101-Turn - on Switching LossEon*Eon includes Bias Safe Operating AreaRBSOAIC = 90A, VCC = 520 VFULL SQUARE-VP = 650V, VGE = 15 VRG = 50 , Tj = 175 C-131-Fall TimetfInductive Load-159-nsRise TimetrVGE = 15V, RG = 10 -17-Turn - off Delay TimemJTurn - off Switching LossEoffreverse - on Switching LossEon*Eon includes - off Switching LossEoffreverse (off)Tj = 175 CTurn - on Delay Timetd(on)

3 SVCC 360V sVGE = 15V, Tj = 150 CShort Circuit Withstand Timetsc*26--VCC 360 VVGE = 15V, Tj = 25 CShort Circuit Withstand Timetsc8--3/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlFRD Electrical Characteristics (at Tj = 25 C unless otherwise specified)VCC = 400 VdiF/dt = 200A/ sTj = 25 CVCC = 400 VdiF/dt = 200A/ sTj = 175 Forward VoltageVFIF = 30 AVTj = 25 = 175 Peak Reverse RecoveryCurrentIrrIF = Reverse Recovery Timetrr-103--trr-242-Diode Reverse Recovery EnergyErr-15- JDiode Peak Reverse RecoveryCurrentIrrIF = Reverse Recovery EnergyErr-113- C CDiode Reverse JDiode Reverse Recovery TimeDiode Reverse - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Curves 0204060801001201401601802002202400255075 1001251501750204060801001200200400600800 Tj 175 C VGE=15V 01020304050600255075100125150175Tj 175 C VGE 15V s TC= 25 C Single Pulse 100 s Collector Current vs.

4 Case Temperature Collector Current : IC [A] Case Temperature : TC [ C] Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Reverse Bias Safe Operating Area Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Power Dissipation vs. Case Temperature Power Dissipation : PD [W] Case Temperature : TC [ C] Forward Bias Safe Operating Area 5/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Curves0153045607590012345Tj= 175 C VGE= 20V VGE= 12V VGE= 10V VGE= 8V VGE= 15V 0153045607590012345Tj= 25 C VGE= 20V VGE= 15V VGE= 12V VGE= 10V VGE= 8V 010203040506002468101214 VCE= 10V Tj= 25 C Tj= 175 C 01234255075100125150175IC= 60A IC= 15A IC= 30A VGE= 15V Typical Output Characteristics Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Typical Output Characteristics Collector Current : IC [A] Collector To Emitter Voltage : VCE[V] Typical Transfer Characteristics Collector Current : IC [A] Gate To Emitter Voltage : VGE [V] Typical Collector To Emitter Saturation Voltage vs.

5 Junction Temperature Collector To Emitter Saturation Voltage : VCE(sat) [V] Junction Temperature : Tj [ C] 6/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Curves051015205101520Tj= 25 C IC= 60A IC= 15A IC= 30A 051015205101520Tj= 175 C IC= 60A IC= 15A IC= 30A 11010010000102030405060tf VCC=400V, VGE=15V RG=10 , Tj=175 C Inductive oad td(off) td(on) tr 110100100001020304050tf td(off) td(on) tr VCC=400V, IC=30A VGE=15V, Tj=175 C Inductive oad Collector To Emitter Saturation Voltage : VCE(sat) [V] Gate To Emitter Voltage : VGE [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] Gate To Emitter Voltage : VGE [V] Switching Time [ns] Collector Current : IC [A] Typical Switching Time vs. Gate Resistance Switching Time [ns] Gate Resistance : RG [ ] Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Typical Collector To Emitter Saturation Voltage vs.

6 Gate To Emitter Voltage Typical Switching Time vs. Collector Current 7/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic VCC=400V, VGE=15V RG=10 , Tj=175 C Inductive oad Eon f=1 MHz VGE=0V Tj=25 C Coes Cres Eon VCC=400V, IC=30A VGE=15V, Tj=175 C Inductive oad 051015010203040IC=30A Tj=25 C 200V 300V 400V Typical Switching Energy Losses vs. Collector Current Switching Energy Losses [mJ] Collector Current : IC [A] Typical Switching Energy Losses vs. Gate Resistance Switching Energy Losses [mJ] Gate Resistance : RG [ ] Typical Capacitance vs. Collector To Emitter Voltage Capacitance [pF] Collector To Emitter Voltage : VCE[V] Typical Gate Charge Gate To Emitter Voltage : VGE [V] Gate Charge : Qg [nC] 8/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic 175 C Tj= 25 C 01002003004000102030405060 VCC=400V diF/dt=200A/ s Inductive oad Tj= 175 C Tj= 25 C 051015200102030405060Tj= 175 C Tj= 25 C VCC=400V diF/dt=200A/ s Inductive oad Tj= 175 C Inductive oad RG=10 RG=20 RG=50 Typical Diode Forward Current vs.

7 Forward Voltage Forward Current : IF [A] Forward Voltage : VF[V] Typical Diode Reverse Recovery Time vs. Forward Current Reverse Recovery Time : trr [ns] Forward Current : IF [A] Typical Diode Reverse Recovery Current vs. Forward Current Reverse Recovery Current : Irr [A] Forward Current : IF [A] Typical Diode Reverse Recovery Energy Losses vs. Forward Current Reverse Recovery Energy Losses : Err [mJ] Forward Current : IF [A] 9/11 - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlElectrical Characteristic Single Pulse Single Pulse igbt Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ C/W] Pulse Width : t1[s] Diode Transient Thermal Impedance Transient Thermal Impedance : ZthJC [ C/W] Pulse Width : t1[s] t1 t2 PDM Duty=t1/t2 Peak Tj=PDM ZthJC+TC t1 t2 PDM Duty=t1/t2 Peak Tj=PDM ZthJC+TC - 2016 ROHM Co., Ltd. All rights SheetRGS60TS65 DlInductive Load Switching Circuit and WaveformVG IF diF/dt Irr trr , Qrr Inductive Load Circuit Inductive Load Waveform Diode Reverce Recovery Waveform tr toff 10% 90% tf td(on) td(off) Gate Drive Time VCE(sat) 10% 90% ton VGE IC VCE Eon 10% Eoff 11/11 - 2016 ROHM Co.

8 , Ltd. All rights Customer Support System you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. The infor mation contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifica-tions :Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to va rious , in order to preve nt personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire preve ntion designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for an y damages ar ising out of the use of our Poducts beyond the rating specified by of application circuits, circuit constants and an y other inf or mation contained herein are provided only to illustrate the standard usage and operations of the Products.

9 The peripheral conditions must be taken into account when designing circuits for mass technical inf or mation specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, an y license to use or exercise intellectual property or other rights held by ROHM or an y other parties. ROHM shall ha ve no responsibility whatsoever for an y dispute ar ising out of the use of such technical infor Products specified in this document are not designed to be radiation use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : tr ansportation equipment ( cars, ships, tr ains), pr imary communication equipment, tr affic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine shall ha ve no responsibility for an y damages or injury ar ising from non-compliance with the recommended usage conditions and specifications contained has used reasonable care to ensur the accuracy of the inf or mation contained in this document.

10 However , ROHM does not warrants that such inf or mation is error-free, and ROHM shall ha ve no responsibility for an y damages ar ising from an y inaccuracy or misprint of such inf or use the Products in accordance with an y applicable en vironmental la ws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall ha ve no responsibility for an y damages or losses resulting non-compliance with any applicable laws or providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export la ws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade document, in part or in whole, may not be reprinted or reproduced without pr ior consent of ) 2)3)4)5)6)7)8)9)10)11)12)13)Notes