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SBOS196H –DECEMBER 2001–REVISED SEPTEMBER …

OPA656(47 pF) Vb499 k 499 k VO1 pFFrequency130120110100908010kHz100kHz1 MHz5 MHzTransimpedance Gain (dB)1 MHz BandwidthProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityOPA656 SBOS196H DECEMBER2001 REVISEDSEPTEMBER2015 OPA656 Wideband,Unity-GainStable,FET-InputOpera tionalAmplifier1 Features3 DescriptionTheOPA656devicecombinesa verywideband,1 500 MHzUnity-gainBandwidthunity-gainstable,v oltage-feedbackoperational Low InputBiasCurrent:2 pAamplifierwith a FET-inputstageto offeran ultrahigh Low OffsetAnd Drift: 250 V, 2 V/ Cdynamic-rangeamplifierforAnalog-to-Digi talConverter(ADC)bufferingandtransimpeda nce Low Distortion:74-dBSFDRat 5 errorsgivegood High-OutputCurrent:70 mAprecisionin opticalapplications. Low InputVoltageNoise:7 nV/ HzThe highunity-gainstablebandwidthand JFET inputallowsexceptionalperformancein high-speed,low-2 Applicationsnoiseintegrators. WidebandPhotodiodeAmplifiersThehighinput impedanceandlowbiascurrent Sample-and-HoldBuffersprovidedby the FETinputis supportedby the ultra- CCDO utputBufferslow 7-nV/ Hz inputvoltagenoiseto achievea verylowintegratednoisein widebandphotodiode ADCI nputBufferstransimpedanceapplications.

OPA656 SBOS196H–DECEMBER 2001–REVISED SEPTEMBER 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT

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Transcription of SBOS196H –DECEMBER 2001–REVISED SEPTEMBER …

1 OPA656(47 pF) Vb499 k 499 k VO1 pFFrequency130120110100908010kHz100kHz1 MHz5 MHzTransimpedance Gain (dB)1 MHz BandwidthProductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityOPA656 SBOS196H DECEMBER2001 REVISEDSEPTEMBER2015 OPA656 Wideband,Unity-GainStable,FET-InputOpera tionalAmplifier1 Features3 DescriptionTheOPA656devicecombinesa verywideband,1 500 MHzUnity-gainBandwidthunity-gainstable,v oltage-feedbackoperational Low InputBiasCurrent:2 pAamplifierwith a FET-inputstageto offeran ultrahigh Low OffsetAnd Drift: 250 V, 2 V/ Cdynamic-rangeamplifierforAnalog-to-Digi talConverter(ADC)bufferingandtransimpeda nce Low Distortion:74-dBSFDRat 5 errorsgivegood High-OutputCurrent:70 mAprecisionin opticalapplications. Low InputVoltageNoise:7 nV/ HzThe highunity-gainstablebandwidthand JFET inputallowsexceptionalperformancein high-speed,low-2 Applicationsnoiseintegrators. WidebandPhotodiodeAmplifiersThehighinput impedanceandlowbiascurrent Sample-and-HoldBuffersprovidedby the FETinputis supportedby the ultra- CCDO utputBufferslow 7-nV/ Hz inputvoltagenoiseto achievea verylowintegratednoisein widebandphotodiode ADCI nputBufferstransimpedanceapplications.

2 WidebandPrecisionAmplifiersBroadtransimp edancebandwidthsare achievable Testand MeasurementFrontEndsgiventhe OPA656device s shownbelow,a 3-dBbandwidthof 1 MHzis providedevenfor a high 1-M transimpedancegainfroma (1)PARTNUMBERPACKAGEBODYSIZE(NOM)SOIC(8) (5) (1) For all availablepackages,see the orderableaddendumatthe end of the TransimpedanceBandwidthWidebandPhotodiod eTransimpedanceAmplifier1An IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand DECEMBER2001 Applicationand Pin Configurationand Deviceand :VS= 5 V: :VS= 5 Mechanical,Packaging,and Orderable8 RevisionHistoryNOTE:Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (November2008)to RevisionHPage AddedESDR atingstable,FeatureDescriptionsection,De viceFunctionalModes,ApplicationandImplem entationsection,PowerSupplyRecommendatio nssection,Layoutsection,DeviceandDocumen tationSupportsection,andMechanical,Packa ging, (March2006)to RevisionGPage ChangedStorageTemperatureRangefrom 40 C to 125 C to 65 C to 12 C.

3 4 Deletedin the DC Performancesection:Drift (March2006)to RevisionFPage AddedDesign-InToolsparagraphand 2001 2015,TexasInstrumentsIncorporatedProduct FolderLinks:OPA65612354+VSVIN VOUT-VSVIN+A57154 Pin Orientation/Package Marking2312348765NC+VSVOUTNCNCVIN VIN+ DECEMBER2001 REVISEDSEPTEMBER20155 RelatedOperationalAmplifierProductsSLEWR ATEVOLTAGENOISEDEVICEVS(V)BW (MHz)(V/ s)(nV/ Hz)AMPLIFIERDESCRIPTIONOPA656 52302907 Unity-GainStableFET-InputOPA657 +7 stableFET InputOPA659 +10 stableBipolarInputTHS4631 1521010007 Unity-GainStableFET-InputProgrammableGai n(5 k / 20 k )OPA85754750220 TransimpedanceAmplifier6 Pin Configurationand FunctionsD PackageDBVP ackage8-PinSOICS urface-Mount5-PinSOT-23 Top ViewTop ViewPin FunctionsPINI/ODESCRIPTIONNAMESOICSOT-23 1NC5 No Connection8 VIN 24 IInvertingInputVIN+33 INoninvertingInput VS42 POWN egativePowerSupplyVOUT61 OOutputof amplifier+VS75 POWP ositivePowerSupplyCopyright 2001 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLinks.

4 OPA656 OPA656 SBOS196H DECEMBER2001 (unlessotherwisenoted)(1)MINMAXUNITS upplyvoltage(TotalBipolarSupplies) VS+VSInputvoltage VS+VSJunctiontemperature,TJ150 CStoragetemperature,Tstg 65125 C(1)StressesbeyondthoselistedunderAbsolu teMaximumRatingsmay causepermanentdamageto the stressratingsonly,whichdo not implyfunctionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditions. Exposureto absolute-maximum-ratedconditionsfor extendedperiodsmay (HBM),per ANSI/ESDA/JEDECJS-001(1) 2000V(ESD)ElectrostaticdischargeCharged- devicemodel(CDM),per JEDEC specificationJESD22-C101(2) 500 VMachineModel 200(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.(2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a (unlessotherwisenoted)MINNOMMAXUNITVST otalsupplyvoltage81012 VTAA mbienttemperature 402585 (1)D (SOIC)DBV(SOT-23)UNIT8 PINS5 PINSR JAJunction-to-ambientthermalresistance12 5150 C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/WR JC(bot)Junction-to-case(bottom)thermalre sistance C/W(1)For moreinformationabouttraditionaland new thermalmetrics,see theSemiconductorandICPackageThermalMetri csapplicationreport, 2001 2015, DECEMBER2001 250 , RL= 100 , and G = 2 V/V, Figure1 for AC (1)AC PERFORMANCE(Figure29)G = +1 V/V,VO= 200 mVPP,TJ= 25 C(2)C500 MHzRF= 0 G = +2 V/V,TJ= 25 C(2)C200 MHzVO= 200 mVPPS mall-SignalBandwidthG = +5 V/V,TJ= 25 C(2)C59 MHzVO= 200 mVPPG = +10 V/V,TJ= 25 C(2)C23 MHzVO= 200 mVPPGain-BandwidthProductG > +10 V/VTJ= 25 C(2)C230 MHzG = +2 V/V,Bandwidthfor 25 C(2)C30 MHzVO= 200 mVPPVO< 200 mVPP,Peakingat a Gainof +1TJ= 25 C(2)

5 0 G = +2 V/V,Large-SignalBandwidthTJ= 25 C(2)C75 MHzVO= 2 VPPG = +2 V/V,SlewRateTJ= 25 C(2)C290V/ s1-V 25 C(2) = +2 V/V,SettlingTimeto 25 C(2)C21nsVO= 2-V StepHarmonicDistortionG = +2 V/V, f = 5 MHz,VO= 2 VPPRL= 200 TJ= 25 C(2) 712nd-HarmonicCdBcRL> 500 TJ= 25 C(2) 74RL= 200 TJ= 25 C(2) 813rd-HarmonicCdBcRL> 500 TJ= 25 C(2) 100 InputVoltageNoisef > 100 kHzTJ= 25 C(2)7nV/ HzInputCurrentNoisef > 100 kHzTJ= 25 C(2) HzG = +2 V/V, PAL,DifferentialGainTJ= 25 C(2) 150 G = +2 V/V, PAL,DifferentialPhaseTJ= 25 C(2) 150 DC PERFORMANCE(3)TJ= 25 C(2)6065VO= 0 V,Open-LoopVoltageGain(AOL)TJ= 0 C to +70 C(4)A59dBRL= 100 TJ= 40 C to +85 C(4)58TJ= 25 C(2) 0 VTJ= 0 C to +70 C(4)A 40 C to +85 C(4) 25 C(2) 2 12 AverageOffsetVoltageDriftVCM= 0 VTJ= 0 C to +70 C(4)A 12 V/ CTJ= 40 C to +85 C(4) 12TJ= 25 C(2) 2 20 InputBiasCurrentVCM= 0 VTJ= 0 C to +70 C(4)A 1800pATJ= 40 C to +85 C(4) 5000TJ= 25 C(2) 2 20 InputBiasCurrentVCM= 0 VTJ= 0 C to +70 C(4)A 1800pATJ= 40 C to +85 C(4) 5000(1)TestLevels:(A) 100%testedat 25 C.

6 Overtemperaturelimitsby characterizationand simulation.(B) Limitsset by characterizationandsimulation.(C) Typicalvalueonly for information.(2)Junctiontemperature= ambientfor 25 C min/maxspecifications.(3)Currentis the inputcommon-modevoltage.(4)Junctiontempe rature= ambientat low temperaturelimit:junctiontemperature= ambient+20 C at high temperaturelimit for overtemperatureminimumand 2001 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLinks:OPA656 OPA656 SBOS196H DECEMBER2001 (continued)RF= 250 , RL= 100 , and G = 2 V/V, Figure1 for AC (1)TJ= 25 C(2) 1 10 InputOffsetCurrentVCM= 0 VTJ= 0 C to +70 C(4)B 900pATJ= 40 C to +85 C(4) 2500 INPUTTJ= 25 C(2) (5)TJ= 0 C to +70 C(4) 40 C to +85 C(4)2TJ= 25 C(2) 4 (5)TJ= 0 C to +70 C(4)A 40 C to +85 C(4) 25 C(2) (6)TJ= 0 C to +70 C(4) 40 C to +85 C(4) 25 C(2) 4 (6)TJ= 0 C to +70 C(4)A 40 C to +85 C(4) 25 C(2)8086 Common-ModeRejectionRatio(CMRR)VCM= VTJ= 0 C to +70 C(4)A78dBTJ= 40 C to +85 C(4)76 DifferentialC || pF1012|| 25 C(2)Common-ModeC || pF1012|| LoadTJ= 25 C(2)AV 25 C(2) 100 TJ= 0 C to +70 C(4)A 40 C to +85 C(4) 25 C(2)5070 CurrentOutput,SourcingTJ= 0 C to +70 C(4)A48mATJ= 40 C to +85 C(4)46TJ= 25 C(2) 50 70 CurrentOutput,SinkingTJ= 0 C to +70 C(4)A 48mATJ= 40 C to +85 C(4) 46G = +1 V/V,Closed-LoopOutputImpedanceTJ= 25 C(2) f = MHzPOWERSUPPLYS pecifiedOperatingVoltageTJ= 25 C(2)C 5 VTJ= 25 C(2)

7 6 MaximumOperatingVoltageRangeTJ= 0 C to +70 C(4)A 6 VTJ= 40 C to +85 C(4) 6TJ= 25 C(2)1416 MaximumQuiescentCurrentTJ= 0 C to +70 C(4) 40 C to +85 C(4) 25 C(2) 0 C to +70 C(4) 40 C to +85 C(4) (5)Tested<3dB belowminimumspecifiedCMRRat CMIR limits.(6)Inputrangeto give > 2001 2015, DECEMBER2001 REVISEDSEPTEMBER2015 ElectricalCharacteristics(continued)RF= 250 , RL= 100 , and G = 2 V/V, Figure1 for AC (1)TJ= 25 C(2)7276+VS= (+PSRR)toTJ= 0 C to +70 C(4) 40 C to +85 C(4)68TJ= 25 C(2)5662 VS= ( PSRR)toTJ= 0 C to +70 C(4)A54dB 40 C to +85 C(4)52 TEMPERATURERANGES pecifiedOperatingRange:U,N PackageTJ= 25 C(2) 4085 CThermalResistance, JAJunction-to-AmbientU: SO-8TJ= 25 C(2)125 C/WN: SOT23-5TJ= 25 C(2)150 :VS= 5 V: HighGradeDC SpecificationsRF= 250 , RL= 100 , and G = +2 V/V, unlessotherwisenoted.(1)PARAMETERTESTCON DITIONSTESTLEVEL(2)MINTYPMAXUNITTJ= 25 C(3) 0 VTJ= 0 C to +70 C(4)A 40 C to +85 C(4) 25 C(3) 2 6 InputOffsetVoltageVCM= 0 VTJ= 0 C to +70 C(4)A 6 V/ CDriftTJ= 40 C to +85 C(4) 6TJ= 25 C(3) 1 5 InputBiasCurrentVCM= 0 VTJ= 0 C to +70 C(4)A 450pATJ= 40 C to +85 C(4) 1250TJ= 25 C(3) 5 InputOffsetCurrentVCM= 0 VTJ= 0 C to +70 C(4)A 450pATJ= 40 C to +85 C(4) 1250TJ= 25 C(3)8895 Common-ModeRejectionRatioVCM= VTJ= 0 C to +70 C(4)A86dB(CMRR)TJ= 40 C to +85 C(4)84TJ= 25 C(3)7478 Power-SupplyRejectionRatio+VS= V to VTJ= 0 C to +70 C(4)A72dB(+PSRR)TJ= 40 C to +85 C(4)70TJ= 25 C(3)6268 Power-SupplyRejectionRatio VS= V to VTJ= 0 C to +70 C(4)A60dB( PSRR)TJ= 40 C to +85 C(4)58(1)All otherspecificationsare the sameas the standard-grade.

8 (2)TestLevels:(A) 100%testedat 25 C. Overtemperaturelimitsby characterizationand simulation.(3)Junctiontemperature= ambientfor 25 C (4)Junctiontemperature= ambientat low temperaturelimit:junctiontemperature= ambient+20 C at high temperaturelimit for 2001 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback7 ProductFolderLinks:OPA656 Time (10 ns/div)Small-Signal Output Voltage (200 mV/div)Large-Signal Output Voltage (400 mV/div) Right ScaleSmall-Signal Left ScaleSee Figure 1G = +2 Time (10 ns/div)Small-Signal Output Voltage (200 mV/div)Large-Signal Output Voltage (400 mV/div) Right ScaleSmall-Signal Left ScaleSee Figure 2G = (MHz)Gain (dB)30 3 6 9 12 15 18VO= Vp-pVO= 1 Vp-pVO= 2 Vp-pSee Figure 2G = (MHz)Gain (dB)9630 3 6 9 See Figure 1VO= Vp-pVO= Vp-pVO= 1 Vp-pVO= 2 Vp-pG = + (MHz)Normalized Gain (dB)630 3 6 9 12 15 18 See Figure 1G = +2G = +1RF= 0 G = +5G = +10VO= (MHz)Normalized Gain (dB)9630 3 6 9 12 15 18 21 24 See Figure 2G = 2G = 1G = 5G = 10VO= 200 mVp-pRF= 402 OPA656 SBOS196H DECEMBER2001 :VS= 5 VTA= 25 C, G = +2 V/V, RF= 250 , RL= 100 , NoninvertingSmall-SignalFrequencyRespons eFigure2.

9 InvertingSmall-SignalFrequencyResponseFi gure3. NoninvertingLarge-SignalFrequencyRespons eFigure4. InvertingLarge-SignalFrequencyResponseFi gure5. NoninvertingPulseResponseFigure6. InvertingPulseResponse8 SubmitDocumentationFeedbackCopyright 2001 2015,TexasInstrumentsIncorporatedProduct FolderLinks:OPA656110 Gain (V/V)Harmonic Distortion (dBc) 60 70 80 90 100 110VO= 2 Vp-pf = 5 MHzRL= 200 See Figure 1, RGAdjusted2nd Harmonic3rd Harmonic 1 10 Gain (V/V)Harmonic Distortion (dBc) 60 65 70 75 80 85 90VO= 2 Vp-pRF= 604 F = 5 MHzRL= 200 See Figure 2, RGand RMAdjusted2nd Harmonic3rd (MHz)Harmonic Distortion (dBc) 50 60 70 80 90 100 1103rd Harmonic2nd HarmonicVO= 2 Vp-pRL= 200 See Figure Voltage Swing (Vp-p)Harmonic Distortion (dBc) 70 75 80 85 90 95 100 105 110f = 1 MHzRL= 200 See Figure 12nd Harmonic3rd Harmonic1001kResistance ( )Harmonic Distortion (dBc) 60 65 70 75 80 85 90 95 100 105 110VO= 2 Vp-pf = 5 MHzSee Figure 12nd Harmonic3rd Voltage Swing (Vp-p)Harmonic Distortion (dBc) 60 65 70 75 80 85 90 95 100 105f = 5 MHzRL= 200 2nd Harmonic3rd DECEMBER2001 REVISEDSEPTEMBER2015 TypicalCharacteristics.

10 VS= 5 V (continued)TA= 25 C, G = +2 V/V, RF= 250 , RL= 100 , MHzFigure7. HarmonicDistortionvs LoadResistanceFigure8. HarmonicDistortionvs OutputVoltage1 MHzFigure9. HarmonicDistortionvs FrequencyFigure10. HarmonicDistortionvs OutputVoltageFigure11. HarmonicDistortionvs NoninvertingGainFigure12. HarmonicDistortionvs InvertingGainCopyright 2001 2015,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback9 ProductFolderLinks:OPA656101001kCapaciti ve Load (pF)RS( )100101 For Maximally Flat Frequency Response110100500 Frequency (MHz)Normalized Gain to Capacitive Load (dB)9630 3 6 9 12RS50 1 k VIVOCL250 250 OPA656CL= 22 pFCL= 100 pFCL= 10 pF1k100k1M10M10k100 MFrequency (Hz)CMRR (dB)PSRR (dB)1101009080706050403020 CMRR+PSRR PSRR 225 180 135 90 45045 40 20020406080 Open Loop Gain - Phase ( ) Open Loop Gain - Magnitude (dB)Frequency (Hz)Aol MagnitudeAol PhaseD00120log10(AOL) AOL1001k10k 100k1M10M 100M1G101001k10k100k1M10Mf (Hz)en (nV/ Hz)in (fA/ Hz)100101 Input Voltage Noise 7nV/ HzInput Current Noise Hz 10 8 6 4 242068 Single-Tone Load Power (dBm)3rd-Order Spurious Level (dBc) 30 40 50 60 70 80 90 10050 50 50 PIPO250 250 OPA6565 MHz2 MHz15 MHz10 MHzOPA656 SBOS196H DECEMBER2001.


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