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SBOS251E - Texas Instruments

, ultra -Low noise , voltage -FeedbackOPERATIONAL amplifier with ShutdownAPPLICATIONS HIGH DYNAMIC RANGE ADC PREAMPS LOW noise , WIDEBAND, TRANSIMPEDANCEAMPLIFIERS WIDEBAND, HIGH GAIN AMPLIFIERS LOW noise DIFFERENTIAL RECEIVERS ULTRASOUND CHANNEL AMPLIFIERS IMPROVED UPGRADE FOR THE OPA687,CLC425, AND LMH6624 FEATURES HIGH GAIN BANDWIDTH: LOW INPUT voltage noise : Hz VERY LOW DISTORTION: 105dBc (5 MHz) HIGH SLEW RATE: 950V/ s HIGH DC ACCURACY: VIO < 100 V LOW SUPPLY CURRENT: LOW shutdown POWER: 2mW STABLE FOR GAINS 12 ultra -High Dynamic RangeDifferential ADC DriverDESCRIPTIONThe OPA847 combines very high gain bandwidth and largesignal performance with an ultra -low input noise voltage ( Hz) while using only 18mA supply current. Wherepower saving is critical, the OPA847 also includes an op-tional power shutdown pin that, when pulled low, disables theamplifier and decreases the supply current to < 1% of thepowered-up value.

www.ti.com Wideband, Ultra-Low Noise, Voltage-Feedback OPERATIONAL AMPLIFIER with Shutdown APPLICATIONS HIGH DYNAMIC RANGE ADC PREAMPS LOW NOISE, WIDEBAND, TRANSIMPEDANCE

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Transcription of SBOS251E - Texas Instruments

1 , ultra -Low noise , voltage -FeedbackOPERATIONAL amplifier with ShutdownAPPLICATIONS HIGH DYNAMIC RANGE ADC PREAMPS LOW noise , WIDEBAND, TRANSIMPEDANCEAMPLIFIERS WIDEBAND, HIGH GAIN AMPLIFIERS LOW noise DIFFERENTIAL RECEIVERS ULTRASOUND CHANNEL AMPLIFIERS IMPROVED UPGRADE FOR THE OPA687,CLC425, AND LMH6624 FEATURES HIGH GAIN BANDWIDTH: LOW INPUT voltage noise : Hz VERY LOW DISTORTION: 105dBc (5 MHz) HIGH SLEW RATE: 950V/ s HIGH DC ACCURACY: VIO < 100 V LOW SUPPLY CURRENT: LOW shutdown POWER: 2mW STABLE FOR GAINS 12 ultra -High Dynamic RangeDifferential ADC DriverDESCRIPTIONThe OPA847 combines very high gain bandwidth and largesignal performance with an ultra -low input noise voltage ( Hz) while using only 18mA supply current. Wherepower saving is critical, the OPA847 also includes an op-tional power shutdown pin that, when pulled low, disables theamplifier and decreases the supply current to < 1% of thepowered-up value.

2 This optional feature may be left discon-nected to ensure normal amplifier operation when no power-down is combination of very low input voltage and current noise ,along with a gain bandwidth product, make theOPA847 an ideal amplifier for wideband transimpedanceapplications. As a voltage gain stage, the OPA847 is opti-mized for a flat frequency response at a gain of +20V/V andis stable down to gains as low as +12V/V. New externalcompensation techniques allow the OPA847 to be used atany inverting gain with excellent frequency response this technique in a differential Analog-to-Digital Con-verter (ADC) interface application, shown below, can deliverone of the highest dynamic-range interfaces JULY 2002 REVISED DECEMBER be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data 2002-2008, Texas Instruments Incorporated+5V 5 VOPA847+5V+5V 5V850 39pF100 20 2k 2k 20 F1.

3 250 Source< GainFrequency (MHz)DIFFERENTIAL OPA847 DRIVER DISTORTIONH armonic Distortion (dBc)10 70 75 80 85 90 95 100 105 110203040502 VPP, at converter RELATED PRODUCTSINPUT NOISEGAIN BANDWIDTHSINGLESVOLTAGE (nV/ Hz)PRODUCT (MHz) DATA information is current as of publication conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all trademarks are the property of their respective CONFIGURATIONSTop ViewSOABSOLUTE MAXIMUM RATINGS(1)Power Supply .. Power Dissipation .. See Thermal Analysis SectionDifferential Input voltage .. voltage Range .. VSStorage Temperature Range: D, DBV .. 65 C to +125 CLead Temperature (soldering, 10s) .. +300 CJunction Temperature (TJ ) .. +150 CESD Rating (Human Body Model) .. 1500V(Charge Device Model) .. 1500V(Machine Model) .. 100 VNOTE: (1) Stresses above these ratings may cause permanent to absolute maximum conditions for extended periods may degradedevice reliability.

4 These are stress ratings only, and functional operation of thedevice at these or any other conditions beyond those specified is not SENSITIVITYThis integrated circuit can be damaged by ESD. Texas Instru-ments recommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handlingand installation procedures can cause damage can range from subtle performance degradationto complete device failure. Precision integrated circuits may bemore susceptible to damage because very small parametricchanges could cause the device not to meet its INFORMATION(1)SPECIFIEDPACKAGETEMPERATUR EPACKAGEORDERINGTRANSPORTPRODUCTPACKAGE- LEADDESIGNATORRANGEMARKINGNUMBERMEDIA, QUANTITYOPA847SO-8D 40 C to +85 COPA847 OPA847 IDRails, 100"" "" "OPA847 IDRTape and Reel, 2500 OPA847 SOT23-6 DBV 40 C to +85 COATIOPA847 IDBVTTape and Reel, 250"" "" "OPA847 IDBVRTape and Reel, 3000 Top ViewSOT12348765 NCInverting InputNoninverting Input VSDIS+VSOutputNCNC = No Connection12364+VSInverting InputOutput VS5 DISN oninverting InputOATI123654 Pin Orientation/Package MarkingNOTE.

5 (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this document, or see the TI web siteat , IDBVTYPMIN/MAX OVER TEMPERATURE0 C to 40 C toMIN/TESTPARAMETERCONDITIONS+25 C+25 C(1)70 C(2)+85 C(2)UNITSMAXLEVEL(3)ELECTRICAL CHARACTERISTICS: VS = 5 VBoldface limits are tested at +25 = 100 , RF = 750 , RG = , and G = +20 (see Figure 1 for AC performance only), unless otherwise : (1) Junction temperature = ambient for +25 C specifications. (2) Junction temperature = ambient at low temperature limit: junction temperature = ambient +23 Cat high temperature limit for over temperature specifications. (3) Test Levels: (A) 100% tested at 25 C. Over temperature limits by characterization and simulation.(B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. VCM is the input common-modevoltage.

6 (5) Tested < 3dB below minimum specified CMRR at CMIR PERFORMANCE (see Figure 1)Closed-Loop BandwidthG = +12, RG = , VO = 200mVPP600 MHztypCG = +20, RG = , VO = 200mVPP350230210195 MHzminBG = +50, RG = , VO = 200mVPP78636057 MHzminBGain Bandwidth Product (GBP)G +503900310030002800 MHzminBBandwidth for Gain FlatnessG = +20, RL = 100 60403530 MHzminBPeaking at a Gain of + DistortionG = +20, f = 5 MHz, VO = 2 VPP2nd-HarmonicRL = 100 74 70 69 68dBcmaxBRL = 500 105 90 89 88dBcmaxB3rd-HarmonicRL = 100 103 96 91 88dBcmaxBRL = 500 110 105 100 90dBcmaxB2-Tone, 3rd-Order InterceptG = +20, f = 20 MHz39373635dBmminBInput voltage noise Densityf > HzmaxBInput Current noise Densityf > HzmaxBPulse ResponseRise-and-Fall Rate2V Step950700625535V/ sminBSettling Time to Step10121418nsmaxB1%2V Step681012nsmaxBDC PERFORMANCE(4)Open-Loop voltage Gain (AOL)VO = 0V98908988dBminAInput Offset VoltageVCM = 0V Offset voltage DriftVCM = 0V V/ Cmax BInput Bias CurrentVCM = 0V 19 39 41 42 AmaxAInput Bias Current Drift (magnitude)VCM = 0V 15 15 40 70nA/ Cmax BInput Offset CurrentVCM = 0V AmaxAInput Offset Current DriftVCM = 0V 2 Cmax BINPUTC ommon-Mode Input Range (CMIR)(5) Rejection Ratio (CMRR)

7 VCM = , Input-Referred110959390dBminAInput ImpedanceDifferentialVCM = || || pFtypCCommon-ModeVCM = || || pFtypCOUTPUTO utput voltage Swing 400 Load Load Output, SourcingVO = 0V100605652mAminACurrent Output, SinkingVO = 0V 75 60 56 52mAminAClosed-Loop Output ImpedanceG = +20, f = < typCPOWER SUPPLYS pecified Operating voltage 5 VtypCMaximum Operating voltage 6 6 6 6 VmaxAMaximum Quiescent CurrentVS = Quiescent CurrentVS = Rejection Ratio+PSRR, PSRR|VS| = to , Input-Referred100959390dBminAPOWER-DOWN (disabled low)(Pin 8 on SO-8; Pin 5 on SOT23-6)Power-Down Quiescent Current (+VS) 200 270 320 370 AmaxAOn voltage (enabled high or floated) voltage (disabled asserted low) Pin Input Bias Current(VDIS = 0)150190200210 AmaxAPower-Down Time200nstypCPower-Up Time60nstypCOff Isolation5 MHz, Input to Output70dBtypCTHERMALS pecification ID, IDBV 40 to +85 CtypCThermal Resistance, JAJunction-to-AmbientDSO-8125 C/WtypCDBVSOT23150 CHARACTERISTICS.

8 VS = 5 VTA = 25 C, G = +20V/V, RG = , and RL = 100 , unless otherwise 3 6 9 12 15 NONINVERTING SMALL-SIGNALFREQUENCY RESPONSEF requency (MHz)Normalized Gain (dB)1101001000G = +50 See Figure 1VO = = RL = 100 RF AdjustedG = +30G = +12G = +20630 3 6 9 12 15 INVERTING SMALL-SIGNALFREQUENCY RESPONSEF requency (MHz)Normalized Gain (dB)1101001000G = 50 See Figure 2VO = = 100 RG = RS = 50 RF AdjustedG = 40G = 30G = 20292623201714118 NONINVERTING LARGE-SIGNALFREQUENCY RESPONSEF requency (MHz)Gain (dB)101001000VO = 2 VPPSee Figure 1RG = RL = 100 G = +20V/VVO = 5 VPPVO = 1 VPPVO = 200mVPP3532292623201714 INVERTING LARGE-SIGNALFREQUENCY RESPONSEF requency (MHz)Gain (dB)101001000VO = 2 VPPSee Figure 2RL = 100 RG = RS = 50 G = 40V/VVO = 5 VPPVO = = PULSE RESPONSETime (5ns/div)Output voltage (50mV/div)Output voltage (250mV/div)Small Signal 100mVSee Figure 1G = +20V/VLeft ScaleLarge Signal 1 VRight PULSE RESPONSETime (5ns/div)Output voltage (50mV/div)Output voltage (250mV/div)Small Signal 100mVSee Figure 2G = 40V/VRG = RS = 50 RL = 100 Left ScaleLarge Signal 1 VRight CHARACTERISTICS: VS = 5V (Cont.)

9 TA = 25 C, G = +20V/V, RG = , and RL = 100 , unless otherwise noted. 70 75 80 85 90 95 100 105 110 1155 MHz HARMONIC DISTORTION vs LOAD RESISTANCELoad Resistance ( )Harmonic Distortion (dBc)100150200250300350400450500 See Figure 1G = +20V/VVO = 2 VPP2nd-Harmonic3rd-Harmonic 75 80 85 90 95 100 1051 MHz HARMONIC DISTORTION vs LOAD RESISTANCELoad Resistance ( )Harmonic Distortion (dBc)100150200250300350400450500 See Figure 1G = +20V/VVO = 5 VPP2nd-Harmonic3rd-Harmonic 65 75 85 95 105 115 HARMONIC DISTORTION vs FREQUENCYF requency (MHz)Harmonic Distortion (dBc) = +20V/VVO = 2 VPPRL = 200 See Figure 1 75 80 85 90 95 100 105 110 115 HARMONIC DISTORTION vs OUTPUT VOLTAGEO utput voltage Swing (VPP)Harmonic Distortion (dBc) Figure 1G = +20V/VF = 5 MHzRL = 200 2nd-Harmonic3rd-Harmonic 75 80 85 90 95 100 105 110 HARMONIC DISTORTION vs NONINVERTING GAINGain (V/V)Harmonic Distortion (dBc)15202530354045505550 See Figure 1VO = 2 VPPRL = 200 F = 5 MHzRF = 750 RG Adjusted2nd-Harmonic3rd-Harmonic 70 75 80 85 90 95 100 105 110 HARMONIC DISTORTION vs INVERTING GAINGain V/V Harmonic Distortion (dBc)20253035404550 See Figure 2VO = 2 VPPRL = 200 F = 5 MHzRG = 50 RF CHARACTERISTICS: VS = 5V (Cont.)

10 TA = 25 C, G = +20V/V, RG = , and RL = 100 , unless otherwise voltage AND CURRENT NOISEF requency (Hz) voltage noise (nV/ Hz)Current Voise (pA/ Hz) HzCurrent HzVoltage Noise504540353025202-TONE, 3RD-ORDER INTERMODULATION INTERCEPTF requency (MHz)Intercept Point (+dBm)5101520253035404550G = +20V/V20dB to matched 50 OPA847 PIPO50 50 GAIN FLATNESS TUNEF requency (MHz)Deviation from Gain ( )1101001000NG = 12NG = 14NG = 20NG = 18NG = 16VO = 200mVPPAV = +12V/VNG = noise GainExternal CompensationSee Figure 810 1 2 3 4 5 6 7 8 9 LOW GAIN INVERTING BANDWIDTHF requency (MHz)Normalized Gain (1dB)1101001000G = 8G = 4G = 2G = 1VO = = 750 External CompensationSee Figure 6100101 RECOMMENDED RS vs CAPACITIVE LOADC apacitive Load (pF)RS ( )1101001000G = +20V/V292623201714 FREQUENCY RESPONSE vs CAPACITIVE LOADF requency (MHz)Normalized Gain to Capacitive Load (dB)1101001000C = 22pFC = 47pFC = 100pFC = 10pFRS adjusted for capacitive RSOPA847 VIVO50 1k (1k is optional.)


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