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TPD4E001-Q1 4-Channel ESD Protection Array …

Product Order Technical Tools & Support &. Folder Now Documents Software Community TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017. TPD4E001-Q1 4-Channel ESD Protection Array With I/O Capacitance 1 Features 3 Description 1 AEC-Q100 Qualified With the Following Results: The TPD4E001-Q1 device is a low-capacitance TVS. diode Array designed for ESD Protection in sensitive Device Temperature Grade 1: 40 C to 125 C electronics connected to communication lines. Each Ambient Operating Temperature Range channel consists of a pair of transient-voltage- Device HBM ESD Classification Level 3B suppression diodes that steer ESD pulses to VCC or HBM Level 15 kV GND. The TPD4E001-Q1 protects against ESD. events up to 8-kV contact discharge and 15-kV air- Device CDM ESD Classification Level C5 gap discharge, as specified in IEC 61000-4-2. IEC 61000-4-2 Level 4 ESD Protection international standard. This device has a low 8-kV Contact Discharge capacitance of per channel making it ideal for use in high-speed data interfaces.

IO3 IO4 GND IO2 IO1 0.1 µF V CC USB Controller R T V BUS D+ D! GND V BUS D+ D! GND D1 Product Folder Order Now Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

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Transcription of TPD4E001-Q1 4-Channel ESD Protection Array …

1 Product Order Technical Tools & Support &. Folder Now Documents Software Community TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017. TPD4E001-Q1 4-Channel ESD Protection Array With I/O Capacitance 1 Features 3 Description 1 AEC-Q100 Qualified With the Following Results: The TPD4E001-Q1 device is a low-capacitance TVS. diode Array designed for ESD Protection in sensitive Device Temperature Grade 1: 40 C to 125 C electronics connected to communication lines. Each Ambient Operating Temperature Range channel consists of a pair of transient-voltage- Device HBM ESD Classification Level 3B suppression diodes that steer ESD pulses to VCC or HBM Level 15 kV GND. The TPD4E001-Q1 protects against ESD. events up to 8-kV contact discharge and 15-kV air- Device CDM ESD Classification Level C5 gap discharge, as specified in IEC 61000-4-2. IEC 61000-4-2 Level 4 ESD Protection international standard. This device has a low 8-kV Contact Discharge capacitance of per channel making it ideal for use in high-speed data interfaces.

2 The low leakage 15-kV Air-Gap Discharge current (10 nA maximum) ensures minimum power IEC 61000-4-5 Surge Protection consumption for the system and high accuracy for A (8/20 s) analog interfaces. Low Input Capacitance Additionally, this device is ideal for protecting Low 10-nA Maximum Leakage Current automotive head units, automotive rear seat to Supply Voltage Range entertainment, and automotive rear camera systems that use USB , Ethernet, or precision analog interfaces. 2 Applications End Equipment Device Information(1). Automotive Head Unit PART NUMBER PACKAGE BODY SIZE (NOM). Automotive Rear Seat Entertainment TPD4E001-Q1 SOT-23 (6) mm mm Automotive Rear Camera Systems (1) For all available packages, see the orderable addendum at the end of the datasheet. Interfaces USB Ethernet Precision Analog Interfaces Typical Schematic VBUS. F D+. VCC. D . RT GND. IO4 IO1. USB. Controller D1. IO3. IO2. VBUS. D+. GND. D . GND. 1. An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers.

3 PRODUCTION DATA. TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017 Table of Contents 1 Features .. 1 Feature Description .. 7. 2 Applications .. 1 Device Functional 8. 3 Description .. 1 8 Application and Implementation .. 9. 4 Revision 2 Application 9. Typical Application .. 9. 5 Pin Configuration and Functions .. 3. 6 4 9 Power Supply 11. Absolute Maximum Ratings .. 4 10 12. ESD Ratings AEC Specification .. 4 Layout Guidelines .. 12. ESD Ratings IEC Specification .. 4 Layout Example .. 12. ESD Ratings ISO Specification .. 4 11 Device and Documentation Support .. 13. Recommended Operating 5 Documentation Support .. 13. Thermal Information .. 5 Receiving Notification of Documentation Updates 13. Electrical 5 Community 13. Typical Characteristics .. 6 Trademarks .. 13. 7 Detailed Description .. 7 Electrostatic Discharge Caution .. 13. Overview .. 7 Glossary .. 13. Functional Block Diagram .. 7 12 Mechanical, Packaging, and Orderable Information .. 13. 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

4 Changes from Revision E (June 2017) to Revision F Page Added ISO 4. Changes from Revision D (March 2015) to Revision E Page Updated Typical Application Schematic .. 9. Changes from Revision C (June 2013) to Revision D Page Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .. 1. Changed Device CDM ESD Classification Level from C4B to C5 .. 1. Changes from Revision B (February 2012) to Revision C Page Changed maximum ICC supply current in Electrical 5. Changes from Revision A (April 2013) to Revision B Page Revised text in DESCRIPTION section .. 1. Revised Figure 2 graph .. 5. Revised APPLICATION INFORMATION schematic .. 9. 2 Submit Documentation Feedback Copyright 2013 2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 .

5 TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017. 5 Pin Configuration and Functions DBV Package 6-Pin SOT-23. Top View IO1 1 6 IO4. GND 2 5 VCC. IO2 3 4 IO3. Pin Functions PIN. TYPE DESCRIPTION. NAME NO. GND 2 GND Ground IO1 1. IO2 3. I/O ESD-protected channel IO3 4. IO4 6. VCC 5 I Power-supply input. Bypass VCC to GND with a F ceramic capacitor Copyright 2013 2017, Texas Instruments Incorporated Submit Documentation Feedback 3. Product Folder Links: TPD4E001-Q1 . TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017 6 Specifications Absolute Maximum Ratings (1). over operating free-air temperature range (unless otherwise noted). MIN MAX UNIT. VCC Supply voltage 7 V. VIO I/O voltage tolerance VCC + V. IPP Peak pulse current (Tp = 8/20 s) (2) A. PPP Peak pulse power (Tp = 8/20 s) (2) 100 W. TA Free air operating temperature 40 125 C. TJ Junction temperature 150 C. Tstg Storage temperature 65 150 C. (1) SStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

6 These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5. ESD Ratings AEC Specification VALUE UNIT. (1). Electrostatic Human-body model (HBM), per AEC Q100-002 15000. V(ESD) V. discharge Charged-device model (CDM), per AEC Q100-011 750. (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. ESD Ratings IEC Specification VALUE UNIT. IEC 61000-4-2 contact discharge 8000. V(ESD) Electrostatic discharge V. IEC 61000-4-2 air-gap discharge 15000. ESD Ratings ISO Specification VALUE UNIT. ISO 10605 (330 pF, 330 ) contact discharge 8000. V(ESD) Electrostatic discharge V. ISO 10605 (330 pF, 330 ) air-gap discharge 15000.

7 4 Submit Documentation Feedback Copyright 2013 2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 . TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017. Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted). MIN MAX UNIT. TA Free air operating temperature 40 125 C. VCC pin Operating voltage V. IO1, IO2, IO3, Operating voltage 0 VCC V. IO4 pins Thermal Information TPD4E001-Q1 . (1). THERMAL METRIC DBV (SOT-23) UNIT. 6 PINS. R JA Junction-to-ambient thermal resistance C/W. R JC(top) Junction-to-case (top) thermal resistance C/W. R JB Junction-to-board thermal resistance C/W. JT Junction-to-top characterization parameter C/W. JB Junction-to-board characterization parameter C/W. (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Electrical Characteristics VCC = 5 V 10%, over operating free-air temperature range (unless otherwise noted).

8 PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT. ICC Supply current 1 200 nA. VF Diode forward voltage IF = 10 mA V. VBR Breakdown voltage IBR = 10 mA 11 V. (2). Surge strike on IO pin, GND pin VCLAMP Clamping voltage Positive transients 16 V. grounded, VCC = V, IPP = A. VRWM Reverse standoff voltage IO pin to GND pin V. IIO channel leakage current VIO = GND to VCC 10 nA. CIO channel input capacitance VCC = 5 V, bias of VCC/2, f = 10 MHz pF. (1) Typical values are at VCC = 5 V and TA = 25 C. (2) Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC 61000-4-5. Copyright 2013 2017, Texas Instruments Incorporated Submit Documentation Feedback 5. Product Folder Links: TPD4E001-Q1 . TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017 Typical Characteristics 100. VIO = V. 90. VCC = V. 80. IO Leakage Current (pA). IO Capacitance (pF). 70. 60. 50. 40. 30. 20. 10. 0. 55 35 15 5 25 45 65 85 105 125. IO Voltage (V) Temperature ( C) C001. Figure 1. IO Capacitance vs IO Voltage (VCC = 5 V) Figure 2.

9 IO Leakage Current vs Temperature 100. 90. 80. 70. Current (A). 60. PPP (W). IPP (A). 50. 40. 30. Power (W). 20. 10. 0. 0 5 10 15 20 25 30 35 40 45 50. Time ( s). Figure 3. Peak Pulse Waveform, VCC = V. 6 Submit Documentation Feedback Copyright 2013 2017, Texas Instruments Incorporated Product Folder Links: TPD4E001-Q1 . TPD4E001-Q1 . SLLSEG0F MARCH 2013 REVISED SEPTEMBER 2017. 7 Detailed Description Overview The TPD4E001-Q1 device is a low-capacitance, TVS diode Array designed for ESD Protection in sensitive electronics connected to communication lines. Each channel consists of a pair of transient voltage suppression diodes that steer ESD pulses to VCC or GND. The TPD4E001-Q1 device protects against ESD events up to 8- kV contact discharge and 15-kV air-gap discharge, as specified in IEC 61000-4-2 international standard. This device has a low capacitance of per channel making it ideal for use in high-speed data interfaces. The low-leakage current (10 nA maximum) ensures minimum power consumption for the system and high accuracy for analog interfaces.

10 Functional Block Diagram VCC. IO1 IO2 IO3 IO4. GND. Feature Description AEC-Q100 Qualified This device is qualified according to the AEC-Q100 standard. The device temperature rating is Grade 1 ( 40 C. to +125 C). The HBM Classification Level passed is 3B (> 8 kV). The CDM Classification Level passed is C5 (all pins 750 V to <1000 V). IEC 61000-4-2 Level 4 ESD Protection The device is specified at 8-kV contact discharge and 15-kV air gap discharge. IEC 61000-4-5 Surge Protection This device is rated to pass at least of peak pulse current according to the IEC 61000-4-5 (8/20- s pulse). standard. Low Input Capacitance This device has a typical capacitance of on each of the four IO pins. This allows for high speed signals on the IO pins in excess of 1 Gbps. Low 10-nA (Maximum) Leakage Current This device is rated to have a maximum leakage current of 10-nA on each of the four IO pins. to Supply Voltage Range This device is specified to operate with a supply voltage (on VCC) between and to ensure sufficient signal integrity.


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