TPD4E002 Quad Low-Capacitance Array With +/ …

1 TPD4E002 InterfaceProtected ICIO1IO2IO3IO4IO1IO2IO3IO4IO1IO2IO3IO4 GNDP roductFolderSample &BuyTechnicalDocumentsTools &SoftwareSupport &CommunityAn IMPORTANTNOTICEat the end of this datasheetaddressesavailability,warranty, changes,use in safety-criticalapplications,intellectual propertymattersand JULY2006 REVISEDDECEMBER2016 TPD4E002 quad Low-CapacitanceArray with 15-kV ESD Protection11 Features1 IEC 61000-4-2 ESDP rotection 15-kVIEC 61000-4-2 ContactDischarge IEC 61000-4-5 SurgeProtection (8/20- s Pulse) ANSI/ESDA/JEDECJS-001 15-kVHumanBodyModel(HBM) FourUnidirectionalVoltageSuppressionDiod esfor use in ESDP rotection I/O BreakdownVoltage,VBR= V (Minimum) I/O Capacitance11 pF (Typical) Low LeakageCurrent< 100 nA VerySmallPrinted-CircuitBoard(PCB)Area< mm2 HighIntegration Suitablefor High-DensityBoards2 Applications Computers Printers CommunicationSystemsand CellularPhones VideoEquipment3 DescriptionTheTPD4E002deviceis a transientvoltagesuppressor(TVS)

2 Designedto protectup to four linesagainstelectrostaticdischarge(ESD) idealfor applicationswherebothreducedlinecapacita nceandboardspace-savingare (1)PARTNUMBERPACKAGEBODYSIZE(NOM)TPD4E00 2 SOT(5) (1) For all availablepackages,see the orderableaddendumatthe end of the JULY2006 : TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporatedTableof Contents1 Pin Configurationand IEC Applicationand Deviceand Mechanical,Packaging,and RevisionHistoryNOTE:Pagenumbersfor previousrevisionsmay differfrompagenumbersin the (February2016)to RevisionFPage (July2010)to RevisionEPage AddedESDR atingstable,FeatureDescriptionsection,De viceFunctionalModes,ApplicationandImplem entationsection,PowerSupplyRecommendatio nssection,Layoutsection,DeviceandDocumen tationSupportsection,andMechanical,Packa ging, POAat the end of the JULY2006 REVISEDDECEMBER2016 ProductFolderLinks.

3 TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated5 Pin Configurationand FunctionsDRLP ackage5-PinSOTTop ViewPin Ground3I/O2I/OESD protectionchannel4I/O3I/OESD protectionchannel5I/O4I/OESD protectionchannel4 TPD4E002 SLVS615F JULY2006 : TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated(1)Stre ssesbeyondthoselistedunderAbsoluteMaximu mRatingsmay causepermanentdamageto the stressratingsonly,whichdo not implyfunctionaloperationof the deviceat theseor any otherconditionsbeyondthoseindicatedunder RecommendedOperatingConditions.

4 Exposureto absolute-maximum-ratedconditionsfor extendedperiodsmay (unlessotherwisenoted)(1)MINMAXUNITTJJ unctiontemperature125 CTopOperatingtemperature 40125 CTstgStoragetemperature 55150 C(1)JEDEC documentJEP155statesthat 500-VHBM allowssafe manufacturingwith a standardESDcontrolprocess.(2)JEDEC documentJEP157statesthat 250-VCDM allowssafe manufacturingwith a JEDECS pecificationVALUEUNITV(ESD)Electrostatic dischargeIEC 61000-4-2contactdischarge 15000 VHuman-bodymodel(HBM),per ANSI/ESDA/JEDECJS-001(1)Charged-devicemo del(CDM),per JEDEC specificationJESD22-C101(2) IEC SpecificationVALUEUNITIppPeakpulsecurren tIEC 61000-4-5(tp = 8/20 s) 61000-4-5(tp = 8/20 s) (unlessotherwisenoted)MINMAXUNITVI/OOper atingvoltage05 VOperatingtemperature 40125 C(1)For moreinformationabouttraditionaland new thermalmetrics,see (1) TPD4E002 UNITDRL(SOT)

5 5 PINSR JAJunction-to-ambientthermalresistance22 0 C/WR JC(top)Junction-to-case(top) C/WR C/W C/W C/WR JC(bot)Junction-to-case(bottom)thermalre sistancen/a JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated(1)Rdis measuredunderreversebreakdownconditionwi th inrushcurrentin the rangeof 1 A 25 CPARAMETERTESTCONDITIONSMINTYPMAXUNITVBR I/O breakdownvoltageIR= 1 leakagecurrentVRM= 3 A CCI/O capacitanceper line11pFRdDynamicresistance(1)2 I (mA) 500m 0 500m (V)INCapacitance (pF) (Mhz) capacitance (pF) ( C)6 TPD4E002 SLVS615F JULY2006.

6 TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016, I/O Capacitancevs TemperatureFigure2. I/O Capacitancevs Frequency(TypicalValues)Figure3. DiodeCurrentAcrossI/O Voltage(TypicalValues) JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated7 TPD4E002is a TPD4E002is ratedto dissipatecontactESDstrikesof 15 kV, beyondLevel4 as specifiedin the IEC an11-pFI/O capacitanceper channel,makingit idealfor use in dataI/O interfacesof up to 100 TPD4E002is a TVSthat providesESDprotectionfor up to four channels.

7 Withstandingup to 15-kVcontactESDper IEC 61000-4-2and IEC monolithictechnologyyieldsexceptionallys mallvariationsin capacitancebetweenany I/O pin of the smallfootprintis idealfor applicationswherespace-savingdesignsare TPD4E002deviceis a passiveintegratedcircuitthat triggerswhenvoltagesare aboveVBRor belowthediodesVFof approximately V. DuringESDevents,voltagesas high as 15-kVcontactESDcan be directedto groundthroughthe voltageson the protectedline fall belowthe triggerlevelsofTPD4E002(usuallywithinten s of nanoseconds)the devicerevertsto its ICIO1IO2IO3IO4IO1IO2IO3IO4IO1IO2IO3IO4 GND8 TPD4E002 SLVS615F JULY2006.

8 TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated8 Applicationand ImplementationNOTEI nformationin the followingapplicationssectionsis not partof the TI componentspecification,and TI doesnot warrantits accuracyor s customersareresponsiblefor determiningsuitabilityof componentsfor test theirdesignimplementationto TPD4E002deviceis a TVSdiodearraytypicallyusedto providea pathto groundfor dissipatingESDeventson high-speedsignallinesbetweena humaninterfaceconnectorand a the currentfromESDpassesthroughthe TVS,onlya smallvoltagedropis presentacrossthe the voltagepresentedto theprotectedintegratedcircuit(IC).

9 The triggeredTVSholdsthis voltage,VCLAMP, to a safe levelfor the a typicaldesignexample,one TPD4E002deviceis beingusedto protectan IC againstpotentialESDfromafour-channelhuma ninterfaceport,as shownin TypicalApplicationfor lists the parametersfor this DesignParametersDESIGNPARAMETERVALUES ignal'svoltagerangeon I/O1,I/O2,I/O3,and I/O40 V to 5 VOperatingfrequency< 100 beginthe designprocess,someparametersmustbe decidedupon;the designermustknowthe following: Voltagerangeof the signalon all protectedlines Operatingfrequencyon all I/O1 ThroughI/O2 The TPD4E002devicehas 4 identicalprotectionchannelsfor symmetryof the deviceprovidesflexibilitywhenselectingwh ichof the four I/O channelswill I/O supportsa signalrangeof 0 V to 5 V and up to 100 (20 V/div)Time (50 ns/div) ( s) IPP (A)051015202530 PPP (W)Power (W)Current (A) JULY2006 REVISEDDECEMBER2016 ProductFolderLinks: TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016, ESDC lampVoltageat I/O Pins.

10 IEC6100-4-215-kVContactDischargeFigure6. PulseWaveform(8/20- s Pulse)9 PowerSupplyRecommendationsThe TPD4E002is a passiveESDprotectiondeviceand thereis no needto powerit. Do not violatethe maximumvoltagespecificationsfor to GNDL egendVIA to Internal GND PlaneTop Layer GND Plane10 TPD4E002 SLVS615F JULY2006 : TPD4E002 SubmitDocumentationFeedbackCopyright 2006 2016,TexasInstrumentsIncorporated10 The optimumplacementis as closeto the connectoras possible. EMIduringan ESDeventcan couplefromthe tracebeingstruckto othernearbyunprotectedtraces,resultingin earlysystemfailures.