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TRANSZORB Transient Voltage Suppressors

BZW04-5V8 thru General Semiconductor Revision: 04-Mar-20191 Document Number: 88316 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Transient Voltage SuppressorsDEVICES FOR BI-DIRECTION APPLICATIONSFor bi-directional types, use B suffix ( BZW04P-6V4B). Electrical characteristics apply in both Glass passivated chip junction Available in uni-directional and bi-directional 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): % Excellent clamping capability Very fast response time Low incremental surge resistance Solder dip 275 C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance please see APPLICATIONSUse in sensitive electronics protection against Voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and DATACase: DO-41 (DO-204AL), molded epoxy over passivated chipMolding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualifiedTerminals: matte tin plated leads, solderable per J-STD-002 and JESD2

BZW04-5V8 thru BZW04-376 www.vishay.com Vishay General Semiconductor 1 P 0 PP PP) RSM PP) BR

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Transcription of TRANSZORB Transient Voltage Suppressors

1 BZW04-5V8 thru General Semiconductor Revision: 04-Mar-20191 Document Number: 88316 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Transient Voltage SuppressorsDEVICES FOR BI-DIRECTION APPLICATIONSFor bi-directional types, use B suffix ( BZW04P-6V4B). Electrical characteristics apply in both Glass passivated chip junction Available in uni-directional and bi-directional 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): % Excellent clamping capability Very fast response time Low incremental surge resistance Solder dip 275 C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance please see APPLICATIONSUse in sensitive electronics protection against Voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and DATACase: DO-41 (DO-204AL), molded epoxy over passivated chipMolding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualifiedTerminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker testNote BZW04-213(B) to BZW04-376(B) for commercial grade onlyPolarity.

2 For uni-directional types the color band denotes cathode end, no marking on bi-directional typesNotes(1)Non-repetitive current pulse, per fig. 3 and derated above TA = 25 C per fig. 2(2)Measured on ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum(3)VF = V for BZW04P(-)188 and below; VF = V for BZW04P(-)213 and abovePRIMARY V to 376 VVBR (uni-directional) V to 462 VVBR (bi-directional) V to 462 V PPPM400 WIFSM (uni-directional only)40 ATJ CPolarityUni-directional, bi-directionalPackageDO-41 (DO-204AL)DO-41 (DO-204AL)MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 C unles otherwise noted)PARAMETERSYMBOLLIMITUNITPeak pulse power dissipation with a 10/1000 s waveform (1) (fig. 1)PPPM400 WPeak pulse current with a 10/1000 s waveform (1)IPPMSee next tableAPower dissipation on infinite heatsink at TL = 75 C (fig. 5) forward surge current, ms single half sine-wave uni-directional only (2)IFSM 40 AMaximum instantaneous forward Voltage at 25 A for uni-directional only (3)VF junction and storage temperature rangeTJ, TSTG-55 to +175 CBZW04-5V8 thru General Semiconductor Revision: 04-Mar-20192 Document Number: 88316 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (TA = 25 C unless otherwise noted)PART NUMBERBREAKDOWN Voltage VBR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGEVWM (V)MAXIMUM REVERSE LEAKAGE AT VWM ID (4) ( A) MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) MAXIMUM CLAMPING Voltage AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/ C) TYPESBZW04-5V8 1000 BZW04-6V4 500 BZW04-7V0 200 BZW04-7V8 50 BZW04-8V5 10 BZW04-9V4

4 BZW04-10 BZW04-11 BZW04-13 BZW04-14 BZW04-15 BZW04-17 BZW04-19 BZW04-20 BZW04-23

5 BZW04-26 BZW04-28 BZW04-31 BZW04-33 BZW04-37 BZW04-40 BZW04-44 BZW04-48 BZW04-53 BZW04-58

6 BZW04-64 103 BZW04-70 113 BZW04-78 125 BZW04-85 105 137 BZW04-94 105 116 152 BZW04-102 114 126 102 165 BZW04-110 124 137 111 179 BZW04-128 143 158 128 207 BZW04-136 152 168 136 219

7 BZW04-145 161 179 145 234 BZW04-154 171 189 154 246 BZW04-171 190 210 171 274 BZW04-188 209 231 188 301 BZW04-213 237 263 213 344 BZW04-239 266 294 239 384 BZW04-256 285 315 256 414 BZW04-273 304 336 273 438 BZW04-299 332 368 299 482 BZW04-342 380 420 342

8 548 BZW04-376 418 462 376 603 BZW04-5V8 thru General Semiconductor Revision: 04-Mar-20193 Document Number: 88316 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1) Pulse test: tp 50 ms(2) Surge current waveform per fig. 3 and derated per fig. 2(3) All terms and symbols are consistent with ANSI/IEEE (4) For bi-directional types having VWM of 10 V and less, the ID limit is doubledBI-DIRECTIONAL TYPESBZW04-5V8B 1000 BZW04-6V4B 500 BZW04-7V0B 200 BZW04-7V8B 50 BZW04-8V5B 10 BZW04-9V4B

9 BZW04-10B BZW04-11B BZW04-13B BZW04-14B


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