UNISONIC TECHNOLOGIES CO., LTD

1 UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 1 of 7 Copyright 2017 UNISONIC TECHNOLOGIES Co., Ltd 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 5 @ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2N60 Power MOSFET UNISONIC TECHNOLOGIES CO.

2 , LTD 2 of 7 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 123456 7 8 Packing 2N60L-TA3-T 2N60G-TA3-T TO-220 GDS--- - - Tube 2N60L-TF1-T 2N60G-TF1-T TO-220F1 GDS--- - - Tube 2N60L-TF2-T 2N60G-TF2-T TO-220F2 GDS--- - - Tube 2N60L-TF3-T 2N60G-TF3-T TO-220F GDS.

3 - Tube 2N60L-TF3T-T 2N60G-TF3T-T TO-220F3 GDS--- - - Tube 2N60L-TM3-T 2N60G-TM3-T TO-251 GDS--- - - Tube 2N60L-TMA-T 2N60G-TMA-T TO-251L GDS--- - - Tube 2N60L-TMS-T 2N60G-TMS-T TO-251S GDS--- - - Tube 2N60L-TMS2-T 2N60G-TMS2-T TO-251S2 GDS--- - - Tube 2N60L-TMS4-T 2N60G-TMS4-T TO-251S4 GDS--- - - Tube 2N60L-TN3-R 2N60G-TN3-R TO-252 GDS--- - - Tape Reel2N60L-TND-R 2N60G-TND-R TO-252D GDS--- - - Tape Reel2N60L-T2Q-T 2N60G-T2Q-T TO-262 GDS--- - - Tube 2N60L-T60-K 2N60G-T60-K TO-126 GDS--- - - Bulk 2N60L-T6C-K 2N60G-T6C-K TO-126C

4 GDS--- - - Bulk 2N60L-K08-5060-R 2N60G-K08-5060-R DFN5060-8 SSSGDD D D Tape ReelNote: Pin Assignment: G: Gate D: Drain S: Source MARKING PACKAGE MARKING TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251L TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-126 TO-126C DFN5060-8 2N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 7 ABSOLUTE MAXIMUM RATINGS (TC = 25 С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2)

5 IAR A Continuous ID A Drain Current Pulsed (Note 2) IDM A Single Pulsed (Note 3)EAS 140 mJ Avalanche Energy Repetitive (Note 2) EAR mJ Peak Diode Recovery dv/dt (Note 4) dv/dt V/ns TO-220/ TO-262 54 W TO-220F/TO-220F1 TO-220F3 23 W TO-220F2 24 W TO-251/TO-251L TO-251S/TO-251S2 TO-251S4/TO-252 TO-252D 44 W TO-126/TO-126C 40 W Power Dissipation (TC = 25 С)

6 DFN5060-8 PD 22 W Junction Temperature TJ +150 С Operating Temperature TOPR -55 ~ +150 С Storage Temperature TSTG -55 ~ +150 С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=64mH, IAS= , VDD=50V, RG=25 , Starting TJ = 25 C 4. ISD , di/dt 200A/ s, VDD BVDSS, Starting TJ = 25 C THERMAL DATA PARAMETER PACKAGE SYMBOL RATINGS UNIT TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3/TO-262 С/W TO-251/TO-251L TO-251S/TO-251S2 TO-251S4/TO-252 TO-252D 100 С/W TO-126/TO-126C 89 С/W Junction to Ambient DFN5060-8 JA 75 С/W TO-220/ TO-262 С/W TO-220F/TO-220F1 TO-220F3 С/W TO-220F2 С/W TO-251/TO-251L TO-251S/TO-251S2 TO-251S4/TO-252 TO-252D

7 С/W TO-126/TO-126C С/W Junction to Case DFN5060-8 JC С/W 2N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 7 ELECTRICAL CHARACTERISTICS (TJ =25 С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITOFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250 A 600 V VDS = 600V, VGS = 0V 10 ADrain-Source Leakage Current IDSS VDS = 480V, TC = 125 С 100 AForward VGS = 30V, VDS = 0V 100nAGate-Source Leakage Current Reverse IGSS VGS = -30V, VDS = 0V -100nABreakdown Voltage Temperature Coefficient BVDSS /TJID=250 A.

8 Referenced to 25 C V/ СON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 A Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A 5 DYNAMIC CHARACTERISTICS Input Capacitance CISS 300 350pFOutput Capacitance COSS 45 50pFReverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f =1 MHz 10 13pFSWITCHING CHARACTERISTICS Total Gate Charge QG 40 50nCGate-Source Charge QGS nCGate-Drain Charge QGD VDS=480V, VGS=10V, ID= (Note 1, 2) nCTurn-On Delay Time tD (ON)

9 40 60nsTurn-On Rise Time tR 35 55nsTurn-Off Delay Time tD(OFF) 90 120nsTurn-Off Fall Time tF VDD =300V, ID = , RG=25 (Note 1, 2) 50 60nsDRAIN-SOURCE DIODE CHARACTERISTICS Continuous Drain-Source Current IS Pulsed Drain-Source Current ISM Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = A Reverse Recovery Time trr 180 nsReverse Recovery Charge Qrr VGS = 0 V, ISD = , di/dt = 100 A/ s (Note 1) CNotes: 1.

10 Pulse Test: Pulse width 300 s, Duty cycle 2%. 2. Essentially independent of operating temperature. 2N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 7 TEST CIRCUITS AND WAVEFORMS Same Type as +* dv/dt controlled by RG* ISD controlled by pulse period* Under Test-+ Peak Diode Recovery dv/dt Test Circuit P. (Driver)ISD( )IFM, Body Diode Forward Currentdi/dtIRMBody Diode Reverse CurrentBody Diode Recovery dv/dtBody Diode Forward Voltage DropVDD10 VVDS( )VGS= Peak Diode Recovery dv/dt Waveforms 2N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 7 TEST CIRCUITS AND WAVEFORMS (Cont.)