반도체 산업에서의 XPS 및 AFM 분석 기술

1 / Vacuum Magazine 2016 12 December24< > 2005 (KAIST) , 2010 3 (ETRI) , 2013 5 Hewlett-Packard Labs , 2013 7 . 2010 , 2015 3 2015 4 . ( , , , , ) ( , , ) , SIMS(Secondary Ion Mass spectroscopy ), AES(Auger Electron spectroscopy ), ISS(Ion Scattering spectroscopy ), RBS(Rutherford Back Scattering), PES(Photo Emission spectroscopy ), LEED(Low Energy Electron Diffraction), RHEED(Reflection High Energy Diffraction), EELS(Electron Energy Loss spectroscopy ), STM(Scanning Tunneling Microscopy), AFM(Atomic Force Microscopy), HIM(Helium Ion Microscopy), ATP(Atom Probe Tomography) . (surface science).

2 LEED, STM, AFM , (bonding) AES, XPS, SIMS . XPS AFM .1. XPS XPS (X-ray photoelectron spectroscopy ; XPS) 1905 . X- eV soft X- (core level) (valence level) . , (binding energy) (work function) . 1 X- h (Eb) ( ) (Ekin) (1) .(1) Ekin=h -Eb- XPS XPS AFM , XPS AFM 25 /.

3 XPS (Electron spectroscopy for Chemical Analysis) ESCA . XPS (Ultra-High Vacuum, UHV) . XPS UHV 1960 K. Siegbahn [1] 1981 Nobel . XPS (mean free path) XPS . X- 2 Al-K (h = eV) Mg-K (h = eV) X- . kV Al anode anode X- . X- (FWHM) X- (Al-K 3) 10 eV (satellite spectrum) (monochromator) . X- (Hemispherical Sector energy Analyzer; HSA).

4 (charge potential) XPS .XPS : (mean free path) XPS . XPS , , , [2]. 3 (Atomic Layer Deposition; ALD) 2 nm SiO2 HfO2 XPS [3]. HfO2 . nm HfO2 . HfO2 [Fig. 1] X- [Fig. 2] XPS / Vacuum Magazine 2016 12 December26 (Certified Reference Material; CRM) 103-04-021 . 3 XPS HfO2 ~ nm 3(a) Si 2p 3(b) HfO2 Hf 4f HfO2 XPS.

5 3(c) HfO2 (nominal thickness) XPS . HfO2 XPS TEM XPS offset TEM [3]. 4(a) HfO2 TEM 4(b) XPS TEM HfO2 . 4(b) XPS TEM offset HfO2 . XPS . Cu(In,Ga)Se2 (CIGS) , . CIGS 4 Cu, In, Ga, Se 4 . CIGS . CIGS . 5 XPS CIGS [4]. CIGS 4 XPS [Fig. 3] XPS nm HfO2 [Fig. 4] (a) nm HfO2 TEM , (b) TEM XPS HfO2 XPS AFM 27 / #103-04-201 . 5(a) CIGS Cu, In, Ga, Se 4 XPS.

6 XPS [4]. XPS CIGS . CIGS . CIGS 3 KeV Ar CIGS CIGS Zalar 5(b) . 5(b) 4 4 . X- . X- XPS . 6 (black phosphorus) XPS [5]. 6(a) UV (UVO) P 2p XPS . P2p doublet eV . eV UVO . UVO eV . 6(b) O1s eV eV P2O5 P=O P-O-P.

7 UVO P2O5 P=O P-O-P . XPS .[Fig. 5] XPS CIGS ; (a) CIGS XPS , (b) CIGS / Vacuum Magazine 2016 12 December28 XPS XPS ( 1). XPS . XPS X- (hard X-ray) , XPS, XPS . X- 20~1500 eV 5~10 KeV hard X- hard X- . XPS(ambient pressure XPS) . XPS XPS , . XPS (heavy atom) - 103~104.

8 2. AFM (pattern) [Fig. 6] XPS UVO [ ] RequirementOMSEM/TEMSPMO perationair, liquidvacuumair, liquid, UHVD epth of fieldsmalllargemediumLateral resolution1mm1-5nm: : TEM2-10nm: : STMV ertical resolutionN/ : : STMS ampleNot completely transparentUn-chargeable vacuum compatible thin film: TEMS urface height 10mmContrastabsorption/reflectionScatter ing/diffractionTunneling/Force XPS AFM 29 / .. , , . , . (Atomic Force Microscopy, AFM).

9 AFM : ( 7). (1) Semiconductor Trench , HAR(High Aspect Ratio) (<1:5) . SE(Spectroscopic Ellipsometry) OCD(Optical Critical Dimension) correlation local area . VSEM(Vertical Scanning Electron Microscopy) .[Fig. 7] (a) (b) [Fig. 8] FinFET / Vacuum Magazine 2016 12 December30(2) Semiconductor Critical Dimension CD(Critical Dimension) PR(Polymer Resistor) mask FinFET(Fin Field-Effect Transistor) FinFET 3D . PR mask Photolithography , PR pattern.

10 CD-SEM PR PR burning PR shrinkage . FinFET Transistor Source Drain Fin Top, Middle, Bottom CD Fin sidewall roughness angle 3D . T-shape ( 8).(3) Semiconductor Roughness SE local variation .. (4) Semiconductor Defect Review [Fig. 9] Bruker Peakforce QNM LDPE (a) Height (b) Modulus (c) Adhesion (d) Dissipation [Fig. 10] [9] XPS AFM 31 / review SEM defect . SEM PR defect . defect defect FD(Force Distance) curve defect hardness, adhesion, energy dissipation defect.