Transcription of avalanche performance. - redrok.com
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avalanche performance. - redrok.com
@ TC = 25 CContinuous Drain Current, VGS @ 10V169 ID @ TC = 100 CContinuous Drain Current, VGS @ 10V118 AIDMP ulsed Drain Current2 680PD @TC = 25 CPower Dissipation330 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse avalanche Energy 560mJIARA valanche CurrentSee , 12b, 15, 16 AEARR epetitive avalanche Energy mJdv/dtPeak Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting Torque, 6-32 or M3 screw10 lbf in ( m)HEXFET power MOSFETS pecifically designed for Automotive applications, thisStripe Planar design of HEXFET power MOSFET sutilizes the latest processing techniques to achieveextremely low on-resistance per silicon area. Additionalfeatures of this HEXFET power MOSFET are a 175 Cjunction operating temperature, fast switching speedand improved repetitive avalanche rating.
Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A IDM Pulsed Drain Current 680 PD @TC = 25°C Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 560 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche …
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