Transcription of INSULATED GATE BIPOLAR TRANSISTOR
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INSULATED GATE BIPOLAR TRANSISTOR
IRG7CH81K10EF-R VCES = 1200V IC(Nominal) = 150A TJ(max) = 175 C VCE(on) typ = @ IC= 150A Applications Medium Power Drives UPS HEV Inverter Welding ECGn-channel Base part number Package Type Standard Pack Orderable part number Form Quantity IRG7CH81K10EF-R Die on Film Wafer 1 IRG7CH81K10EF-R Mechanical Parameter Die Size x mm2 Minimum Street Width 75 m Emiter Pad Size (Included gate Pad) See Die Drawing mm2 gate Pad Size x Area Total / Active / Thickness 140 m Wafer Size 200 mm Notch Positio
INSULATED GATE BIPOLAR TRANSISTOR Features Benefits Low VCE(ON) and switching Losses High efficiency in a wide range of applications and switching frequencies Square RBSOA and Maximum Junction Temperature 175°C Improved Reliability due to rugged hard switching performance and higher power capability ...
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