Example: bankruptcy
Lecture 12: MOS Transistor Models

Lecture 12: MOS Transistor Models

Back to document page

EECS 105Fall 2003, Lecture 12 Prof. A. Niknejad Observed Behavior: ID-VDS For low values of drain voltage, the device is like a resistor As the voltage is increases, the resistance behaves non-linearly and the rate of increase of current slows Eventually the current stops growing and remains essentially constant (current source) VDS IkDS /

  Lecture, Lecture 12

Download Lecture 12: MOS Transistor Models


Information

Domain:

Source:

Link to this page:

Please notify us if you found a problem with this document:

Other abuse

Advertisement

Related search queries