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SiC Power Devices and Modues Application Note

SiC Power Devices and Modues Application Note

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breakdown voltage power devices from 600 V to several thousand V can be manufactured with a drift layer having a higher impurity concentration and a thinner thickness compared with Si devices. Most of the resistance component of high breakdown voltage power devices is the resistance of this drift layer.

  Devices, Power, Voltage, Voltage power, Sic power devices and

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