ZVN3310A N-channel enhancement mode vertical DMOS FET ...

1 N-channel enhancement . ZVN3310A MODE vertical DMOS FET ZVN3310A . ISSUE 2 MARCH 94. TYPICAL CHARACTERISTICS FEATURES. * 100 Volt VDS. * RDS(on)= 10 . ID(On) -On-State Drain Current (Amps). ID(On) -On-State Drain Current (Amps). VGS= 10V. 9V VGS=. 8V 10V D. 9V G. 8V. S. 7V. 6V. 7V E-Line 6V TO92 Compatible 5V. 5V ABSOLUTE MAXIMUM RATINGS. 4V 4V. PARAMETER SYMBOL VALUE UNIT. 0 3V 3V. 0 Drain-Source Voltage V DS 100 V. 0 10 20 30 40 50 0 2 4 6 8 10. Continuous Drain Current at T amb=25 C ID 200 mA. VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts).

2 Pulsed Drain Current I DM 2 A. Output Characteristics Saturation Characteristics Gate-Source Voltage V GS 20 V. Power Dissipation at T amb=25 C P tot 625 mW. ID(On)-On-State Drain Current (Amps). Operating and Storage Temperature Range T j :T stg -55 to +150 C. 10. VDS-Drain Source Voltage (Volts). VDS=. 8. 25V ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 6 Drain-Source Breakdown BV DSS 100 V I D=1mA, V GS=0V. ID= Voltage 4 1A. Gate-Source Threshold V GS(th) V ID=1mA, V DS= V GS.

3 2 Voltage 0 Gate-Body Leakage I GSS 20 nA V GS= 20V, V DS=0V. 0. 0 4 8 12 16 20 0 2 4 6 8 10. Zero Gate Voltage Drain I DSS 1 A V DS=100V, V GS=0. VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts). Current 50 A V DS=80V, V GS=0V, T=125 C (2). Voltage Saturation Characteristics Transfer Characteristics On-State Drain Current(1) I D(on) 500 mA V DS=25V, V GS=10V. Static Drain-Source On-State R DS(on) 10 V GS=10V,I D=500mA. Resistance (1). RDS(ON) -Drain Source Resistance ( ). 100 Forward transconductance (1)(2 g fs 100 mS V DS=25V,I D=500mA.)

4 ID= Normalised RDS(on) and VGS(th). on ) ). S(. RD. ce Input Capacitance (2) C iss 40 pF. an ist es eR Common Source Output C oss 15 pF V DS=25V, V GS=0V, f=1 MHz rc 10 ou -S Capacitance (2). ID= rain D. 1A. Reverse Transfer Capacitance C rss 5 pF. Gate Thresh old (2). Voltage VGS. (th). Turn-On Delay Time (2)(3) t d(on) 5 ns 1 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160. 1 2 3 4 5 6 7 8 9 10 20 Rise Time (2)(3) tr 7 ns V DD 25V, I D=500mA. VGS-Gate Source Voltage (Volts) T-Temperature (C ) Turn-Off Delay Time (2)(3) t d(off) 6 ns On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) tf 7 ns 3-379 3-378.

5 N-channel enhancement . ZVN3310A MODE vertical DMOS FET ZVN3310A . ISSUE 2 MARCH 94. TYPICAL CHARACTERISTICS FEATURES. * 100 Volt VDS. * RDS(on)= 10 . ID(On) -On-State Drain Current (Amps). ID(On) -On-State Drain Current (Amps). VGS= 10V. 9V VGS=. 8V 10V D. 9V G. 8V. S. 7V. 6V. 7V E-Line 6V TO92 Compatible 5V. 5V ABSOLUTE MAXIMUM RATINGS. 4V 4V. PARAMETER SYMBOL VALUE UNIT. 0 3V 3V. 0 Drain-Source Voltage V DS 100 V. 0 10 20 30 40 50 0 2 4 6 8 10. Continuous Drain Current at T amb=25 C ID 200 mA. VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts).

6 Pulsed Drain Current I DM 2 A. Output Characteristics Saturation Characteristics Gate-Source Voltage V GS 20 V. Power Dissipation at T amb=25 C P tot 625 mW. ID(On)-On-State Drain Current (Amps). Operating and Storage Temperature Range T j :T stg -55 to +150 C. 10. VDS-Drain Source Voltage (Volts). VDS=. 8. 25V ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 6 Drain-Source Breakdown BV DSS 100 V I D=1mA, V GS=0V. ID= Voltage 4 1A. Gate-Source Threshold V GS(th) V ID=1mA, V DS= V GS.

7 2 Voltage 0 Gate-Body Leakage I GSS 20 nA V GS= 20V, V DS=0V. 0. 0 4 8 12 16 20 0 2 4 6 8 10. Zero Gate Voltage Drain I DSS 1 A V DS=100V, V GS=0. VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts). Current 50 A V DS=80V, V GS=0V, T=125 C (2). Voltage Saturation Characteristics Transfer Characteristics On-State Drain Current(1) I D(on) 500 mA V DS=25V, V GS=10V. Static Drain-Source On-State R DS(on) 10 V GS=10V,I D=500mA. Resistance (1). RDS(ON) -Drain Source Resistance ( ). 100 Forward transconductance (1)(2 g fs 100 mS V DS=25V,I D=500mA.)

8 ID= Normalised RDS(on) and VGS(th). on ) ). S(. RD. ce Input Capacitance (2) C iss 40 pF. an ist es eR Common Source Output C oss 15 pF V DS=25V, V GS=0V, f=1 MHz rc 10 ou -S Capacitance (2). ID= rain D. 1A. Reverse Transfer Capacitance C rss 5 pF. Gate Thresh old (2). Voltage VGS. (th). Turn-On Delay Time (2)(3) t d(on) 5 ns 1 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160. 1 2 3 4 5 6 7 8 9 10 20 Rise Time (2)(3) tr 7 ns V DD 25V, I D=500mA. VGS-Gate Source Voltage (Volts) T-Temperature (C ) Turn-Off Delay Time (2)(3) t d(off) 6 ns On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) tf 7 ns 3-379 3-378.

9 ZVN3310A . TYPICAL CHARACTERISTICS. 160 160. gfs- transconductance (mS). gfs- transconductance (mS). VDS= 25V. 120 VDS= 25V. 120. 80 80. 40 40. 0 0. 0 0 2 4 6 8 10 12. ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts). transconductance v drain current transconductance v gate-source voltage VDS=. 20V 50V 80V. 16. 50. VGS-Gate Source Voltage (Volts). 14 ID= 40. C-Capacitance (pF). 12. 10. 30. Ciss 8. 20 6. 4. 10. Coss 2. Crss 0. 0. 0 10 20 30 40 50 0 VDS-Drain Source Voltage (Volts) Q-Charge (nC). Capacitance v drain-source voltage Gate charge v gate-source voltage 3-380.