30V P-Channel MOSFET

1 AO3401A30V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V)< 50m RDS(ON) (at VGS = )< 60m RDS(ON) (at VGS= )< 85m SymbolVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JL C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsUnitsParameterTypMaxAbsol ute Maximum Ratings TA=25 C unless otherwise noted-30 VDrain-Source Voltage-30 The AO3401A uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and operationgate voltages as low as This device is suitable foruse as a load switch or other general CPower Dissipation BPDP ulsed Drain Current CContinuous DrainCurrentTA=25 CIDV 12 Gate-Source VoltageTA=25 Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient ASOT23 Top View Bottom ViewDGSGSDGDS Rev 3: Mar.

2 2011 1 of 5 AO3401A SymbolMinTypMaxUnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100nAVGS(th)Gate Threshold (ON)-27A4150TJ=125 C62754760m 6085m Qg(10V)14nCQg( ) (on) (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeIF= , dI/dt=100A/ sMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERSTurn-On Rise TimeTurn-Off DelayTimeVGS=-10V, VDS=-15V, RL= ,RGEN=3 Gate resistanceVGS=0V, VDS=0V, f=1 MHzTurn-Off Fall TimeTotal Gate ChargeVGS=-10V, VDS=-15V, ID= Source ChargeGate Drain ChargeTotal Gate Chargem IS=-1A,VGS=0 VVDS=-5V, ID= , ID= , ID= TransconductanceDiode Forward VoltageRDS(ON)Static Drain-Source On-ResistanceIDSS AVDS=VGS ID=-250 AVDS=0V, VGS= 12 VZero Gate Voltage Drain CurrentGate-Body leakage currentElectrical Characteristics (TJ=25 C unless otherwise noted)

3 STATIC PARAMETERSP arameterConditionsBody Diode Reverse Recovery TimeDrain-Source Breakdown VoltageOn state drain currentID=-250 A, VGS=0 VVGS=-10V, VDS=-5 VVGS=-10V, ID= Transfer CapacitanceIF= , dI/dt=100A/ sVGS=0V, VDS=-15V, f=1 MHzSWITCHING PARAMETERSA. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. Thevalue in any given application depends on the user's specific board The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keepinitialTJ=25 The R JA is the sum of the thermal impedence from junction to lead R JL and lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with2oz.

4 Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. Rev 3: Mar. 2011 2 of 5 AO3401A TYPICAL ELECTRICAL AND THERMAL (Volts)Figure 2: Transfer Characteristics (Note E)-ID(A)204060801000246810-ID (A)Figure 3: On-Resistance vs. Drain Current andGate Voltage (Note E)RDS(ON) (m ) + + (Volts)Figure 6: Body-Diode Characteristics (Note E)IS (A)25 C125 ( C)Figure 4: On-Resistance vs. Junction Temperature(Note E)Normalized On-ResistanceVGS= (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage(Note E)RDS(ON) (m )25 C125 CVDS=-5 VVGS= C125 C0510152025012345-VDS (Volts)Fig 1: On-Region Characteristics (Note E)-ID (A)VGS= Rev 3: Mar. 2011 3 of 5 AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0246810051015Qg (nC)Figure 7: Gate-Charge Characteristics-VGS (Volts)02004006008001000051015202530-VDS (Volts)Figure 8: Capacitance CharacteristicsCapacitance (pF)CissCossCrssVDS=-15 VID= Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)Power (W)TA=25 (Volts)-ID (Amps)Figure 9: Maximum Forward Biased SafeOperating Area (Note F)10 s10s1msDCRDS(ON)limitedTJ(Max)=150 CTA=25 C100 Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Z JA Normalized TransientThermal ResistanceSingle PulseD=Ton/TTJ,PK=TA+ JAIn descending orderD= , , , , , , single pulseR JA=125 C/WTonTPD Rev 3: Mar.

5 2011 4 of 5 AO3401A VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VVddVgsIdVgsRgDUTVDCVgsVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL-+2E = 1/2 LIARARBVDSSIARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & W aveformsVds -Vds +dI/dtRMrrVddVddQ = - Idttrr-Isd-VdsF-I-IVDCDUTVddVgsVdsVgsRLR gResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on) Rev 3: Mar. 2011 5 of 5