BC846 series 65 V, 100 mA NPN general-purpose transistors

1 1. Product General descriptionNPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. [1]Valid for all available selection Features and benefits general-purpose transistors SMD plastic packages Two different gain Applications general-purpose switching and Quick reference data BC846 series65 V, 100 mA NPN general-purpose transistorsRev. 9 25 September 2012 Product data sheetTable overviewType number[1]PackagePNP complementNexperiaJEITAJEDECBC846 SOT23-TO-236 ABBC856BC846 WSOT323SC-70-BC856 WBC846 TSOT416SC-75-BC856 TTable reference dataSymbolParameterConditionsMinTypMaxUn itVCEO collector-emitter voltage open base--65 VICcollector current--100mAhFEDC current gainVCE=5V; IC=2mA110-450hFEgroup A110180220hFEgroup B200290450 Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 2 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors2.

2 Pinning information 3. Ordering information [1]Valid for all available selection Marking [1]* = placeholder for manufacturing site codeTable outlineGraphic symbolSOT23, SOT323, SOT4161base2emitter3collector006aaa14412 3sym021321 Table informationType number[1]PackageNameDescriptionVersionBC 846-plastic surface-mounted package; 3 leadsSOT23BC846 WSC-70plastic surface-mounted package; 3 leadsSOT323BC846 TSC-75plastic surface-mounted package; 3 leadsSOT416 Table codesType numberMarking code[1]BC8461D*BC846A1A*BC846B1B*BC846W1 D*BC846AW1A*BC846BW1B*BC846T1 MBC846AT1 ABC846BT1B Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 3 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors5. Limiting values [1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard Thermal characteristics [1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

3 SymbolParameterConditionsMinMaxUnitVCBO collector-base voltageopen emitter-80 VVCEO collector-emitter voltageopen base-65 VVEBO emitter-base voltageopen collector-6 VICcollector current-100mAICM peak collector currentsingle pulse; tp 1ms-200mAIBM peak base currentsingle pulse; tp 1ms-200mAPtottotal power dissipationTamb 25 C[1]SOT23-250mWSOT323-200mWSOT416-150mWT jjunction temperature-150 CTambambient temperature 65+150 CTstgstorage temperature 65+150 CTable characteristicsSymbolParameterConditions MinTypMaxUnitRth(j-a)thermal resistance from junction to ambientin free air[1]SOT23--500K/WSOT323--625K/WSOT416- -833K/W Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 4 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors7. Characteristics [1]Pulse test: tp 300 s; = [2]VBEsat decreases by approximately mV/K with increasing temperature.

4 [3]VBE decreases by approximately 2 mV/K with increasing C unless otherwise cut-off currentVCB=30V; IE=0A--15nAVCB=30V; IE=0A; Tj= 150 C--5 AIEBO emitter-base cut-off currentVEB=5V; IC= 0 A--100nAhFEDC current gainVCE=5V; IC=10 AhFEgroup A-180-hFEgroup B-290-DC current gainVCE=5V; IC=2mA110-450hFE group A110180220hFE group B200290450 VCEsatcollector-emitter saturation voltageIC=10mA; IB= ; IB=5mA[1]-200400mVVBE satbase-emitter saturation voltageIC=10mA; IB= [2]-760-mVIC=100mA; IB=5mA[2]-900-mVVBE base-emitter voltageIC=2mA; VCE=5V[3]580660700mVIC=10mA; VCE=5V[3]--770mVfTtransition frequencyVCE=5V; IC=10mA; f=100 MHz100--MHzCccollector capacitanceVCB=10V; IE=ie=0A; f=1 MHz- 23pFCeemitter capacitanceVEB= ; IC=ic=0A; f=1 MHz-11-pFNFnoise figureIC=200 A; VCE=5V; RS=2 k ; f = 1 kHz; B=200Hz-210dB Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev.

5 9 25 September 2012 5 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors VCE=5V(1) Tamb= 150 C(2) Tamb=25 C(3) Tamb= 55 CVCE=5V(1) Tamb= 55 C(2) Tamb=25 C(3) Tamb= 150 CFig A: DC current gain as a function of collector current; typical valuesFig A: Base-emitter voltage as a function of collector current; typical valuesIC/IB=20(1) Tamb= 150 C(2) Tamb=25 C(3) Tamb= 55 CIC/IB=10(1) Tamb= 55 C(2) Tamb=25 C(3) Tamb= 150 CFig A: Collector-emitter saturation voltage as a function of collector current; typical valuesFig A: Base-emitter saturation voltage as a function of collector current; typical valuesmgt72310 1110102103IC (mA)0400300200100hFE(1)(2)(3)mgt72410 1110102103IC (mA)012001000800600400200 VBE(mV)(1)(2)(3)10310210mgt72510 1110102103IC (mA)VCEsat(mV)(1)(2)(3)mgt72610 1110102103IC (mA)012001000800600400200 VBEsat(mV)(1)(2)(3) Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev.

6 9 25 September 2012 6 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistorsVCE=5V(1) Tamb= 150 C(2) Tamb=25 C(3) Tamb= 55 CVCE=5V(1) Tamb= 55 C(2) Tamb=25 C(3) Tamb= 150 CFig B: DC current gain as a function of collector current; typical valuesFig B: Base-emitter voltage as a function of collector current; typical valuesIC/IB=20(1) Tamb= 150 C(2) Tamb=25 C(3) Tamb= 55 CIC/IB=10(1) Tamb= 55 C(2) Tamb=25 C(3) Tamb= 150 CFig B: Collector-emitter saturation voltage as a function of collector current; typical valuesFig B: Base-emitter saturation voltage as a function of collector current; typical valuesmgt72710 1110102103IC (mA)0600500400300200100hFE(1)(2)(3)01200 1000800600400200mgt72810 210 1110102103IC (mA)VBE(mV)(1)(2)(3)10410310210mgt72910 1110102103IC (mA)VCEsat(mV)(1)(2)(3)mgt73010 1110102103IC (mA)012001000800600400200 VBEsat(mV)(1)(2)(3) Nexperia 2017.

7 All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 7 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors8. Package outlineFig outline SOT23 (TO-236AB)Fig 10. Package outline SOT323 (SC-70)04-11-04 Dimensions in in Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 8 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors9. Packing information [1]For further information and the availability of packing methods, see Section 13.[2]Valid for all available selection 11. Package outline SOT416 (SC-75)04-11-04 Dimensions in methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number[2]PackageDescriptionPacking quantity100030004000BC846 SOT234 mm pitch, 8 mm tape and reel-215--235BC846 WSOT3234 mm pitch, 8 mm tape and reel-115--135BC846 TSOT4164 mm pitch, 8 mm tape and reel-115--135 Nexperia 2017.

8 All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 9 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors10. SolderingFig 12. Reflow soldering footprint SOT23 (TO-236AB)Fig 13. Wave soldering footprint SOT23 (TO-236AB)solder landssolder resistoccupied areasolder (3 ) (3 ) (3 ) (3 ) in mmsolder landssolder resistoccupied areapreferred transport direction during (2 ) (2 ) in mm Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 10 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistorsFig 14. Reflow soldering footprint SOT323 (SC-70)Fig 15. Wave soldering footprint SOT323 (SC-70)solder landssolder resistoccupied areasolder (3 ) (3 ) (3 ) in (3 ) (2 ) landssolder resistoccupied areapreferred transportdirection during solderingDimensions in mm Nexperia 2017.

9 All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 11 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors Fig 16. Reflow soldering footprint SOT416 (SC-75)solder landssolder resistoccupied areasolder (3 ) (3 ) in mm Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev. 9 25 September 2012 12 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors11 . Revision history Table historyDocument IDRelease dateData sheet statusChange noticeSupersedesBC846_SER data sheet-BC846_SER : Table 6 Limiting values : Ptot values correctedBC846_SER data sheetBC846_BC546_SER data sheet-BC846_BC546_SER data sheet-- Nexperia 2017. All rights reservedBC846_SERAll information provided in this document is subject to legal data sheetRev.

10 8 25 September 2012 13 of 15 NexperiaBC846 series65 V, 100 mA NPN general-purpose transistors12. Legal Data sheet status[1]Please consult the most recently issued document before initiating or completing a design. [2]The term short data sheet is explained in section Definitions . [3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL DefinitionsDraft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title.