Transcription of NTE182 (NPN) & NTE183 (PNP) Silicon …
1 NTE182 (NPN) & NTE183 (PNP) Silicon complementary TransistorsGeneral purpose amplifier , SwitchDescription:The NTE182 (NPN) and NTE183 (PNP) are Silicon transistors in a TO127 type case designed for usein general purpose amplifier and switching :DDC Current Gain Specified to 10 ADHigh Current Gain Bandwidth Product: fT = 2 MHz (Min) @ IC = 500mAAbsolute Maximum Ratings:Collector Emitter Voltage, VCEO60V.. Collector Base Voltage, VCB70V.. Emitter Base Voltage, VEB5V.. Collector Current, IC10A.. Base Current, IB6A.. Total Device Dissipation (TC = +25 C), PD90W.. Derate Above 25 C.. Operating Junction Temperature Range, TJ 55 to +150 C.. Storage Temperature Range, Tstg 55 to +150 C.. Thermal Resistance, Junction to Case, C/W.
2 Electrical Characteristics: (TC =+25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitOFF CharacteristicsCollector Emitter Sustaining VoltageVCEO(sus)IC = 200mA, IB = 0, Note 160 VCollector Cutoff CurrentICEOVCE = 30V, IB = 0 700 AICEXVCE = 70V, VBE(off) = = 70V, VBE(off) = ,TC = +150 C = 70V, IE = 0 = 70V, IE = 0, TC = +150 C 10mAEmitter Cutoff CurrentIEBOVBE = 5V, IC = 0 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Electrical Characteristics (Cont d): (TC =+25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTypMaxUnitON Characteristics (Note 1)DC Current GainhFEIC = 4A, VCE = 4V20 100IC = 10A, VCE = Base Emitter ON VoltageVBE(on)IC = 4A, VCE = 4V Emitter Saturation VoltageVCE(sat)IC = 4A, IB = 400mA = 10A, IB = CharacteristicsCurrent Gain Bandwidth ProductfTIC = 500mA, VCE = 10V,f = MHzNote 1.
3 Pulse Test: Pulse Width 300 s. Duty Cycle 2%..530 ( ) ( ) ( ) ( ).150 ( ) MaxHeat Sink ContactArea (Bottom).143 ( ) Dia ThruC (Heat Sink Area)EBC
